• Analytical Science and Technology
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• v.9 no.1
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• pp.20-25
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• 1996

Trace levels of uranium and thorium in geologic samples are determined rapidly by a direct wavelength-dispersive X-ray fluorescence method. Relative intensity of scattered tube radiation was used as an internal standard to compensate for variations in instrumental operating characteristics. U and Th can be determined within a precision of ${\pm}10%$ and accuracy of ${\pm}15%$ or less with measuring times of 50 seconds for Th and 400 seconds for U, respectively. The results of XRF analysis were in good agreement with those of other methods such as nutron activation analysis and inductively coupled plasma atomic emission spectrometry.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.9
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• pp.907-915
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• 2002

In this paper, a compact digital phase shifter to be used an active phased array antenna system for satellite communications was proposed. The even and odd mode analysis for a given reflection-type phase shifter, which uses a folded hybrid coupler as a base element, was performed and the design parameters were derived. Also, to verify experimentally the electrical performances of the proposed structure, X-band 4-bit digital phase shifter was designed and fabricated using Teflon soft substrate $({\varepsilon}_r; =\;2.17)$. Its circuit size was less than 3.5 cm $\times$ 3.0 cm, and it exhibited at least 50 % size reduction as compared with the conventional unfolded configuration. The experimental results of the fabricated phase shifter showed that the average insertion loss and insertion loss variation were less than 3.5 dB, $\pm$ 0.6 dB within the operating band, 7.9 ~ 8.4 GHz, respectively. And, input and output return loss were more than 10 dB, respectively. Also, the phase response of the phase shifter showed 4-bit operation with $\pm$3$^{\circ}$ rms phase error.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• 한국방재학회:학술대회논문집
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• 2011.02a
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• pp.54-54
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• 2011

기존의 착저식 방파제를 보완하기 위하여 부유식 방파제가 개발되었고, 많은 연구가 선행되어 왔다. 부유식 방파제의 최대 장점은 경제성과 친환경성이다. 그러나 부유식 방파제는 소파성능이 떨어진다는 단점이 있으며, 이를 개선하기 위해 잠재와 혼용, 배열형에 관한 연구등이 선행되어왔다. 그러나 이것은 경제성이라는 강점을 고려하지 못하였다. 그래서 본 연구에서는 부유식 방파제의 중요한 장점중 하나인 경제성을 고려해, 단면현상 변화만을 이용하여 부유식 방파제의 소파성능 개선하고자 하였다. RANS(Reynolds averaged Navier-Stokes) 방정식에 기초하여 VOF법과 $k-{\varepsilon}$ 난류모델을 결합한 수치모델인 CADMAS-SURF를 이용하였으며, 구조물 단면형상 변화를 이용해 와의 상호 간섭을 유도하였고, 이에 따른 투과율 변화를 관찰 하였다. 결과를 살펴보면 요철1 단면에서는 구조물 전면 하단부분과 구조물 후면 하단부분에서 와의 간섭이 일어났으며 가장 아래 요철 부분에서 유속의 전달현상이 보인다. 투과계수는 일반적인 부유식 방파제와 마찬가지로 L/B가 1~4사이 값인, 비교적 단주기에서는 0.3~0.4의 투과율을 보였으나 L/B가 5를 넘어가면서 0.45~0.55의 투과율을 보였고, 요철2 단면에서는 전면과 후면에서 발달한 와가 전, 후면 돌출부에 의해 바닥까지 전파되지 못하는 양상을 보였으며, 돌출부 사이 중앙부분에서 가장 활발한 와의 간섭을 관찰 할 수 있었다. 돌출부 아래에서 역시 강력한 와의 간섭을 보이고 있다. 투과율 역시 가장 낮은 값을 보였으며 비교적 단주기 구간인 B/L 1~4 에서는 0.2~0.35 사이의 값을 가졌으며 5~10사이구간에서는 0.35~0.34의 값을 보이고 있다. 이 같은 결과는 와의 간섭이 가장 활발하게 나타난 결과로 보인다. 그리고 요철 3단면에서는 전면 돌출부 끝단에서의 활발한 와의 간섭을 관찰 할 수 있었다. 투과율은 세 단면 중 가장 높은 값의 투과율을 보이지만 B/L 3~4 구간에서 요철1 경우보다 낮은 값의 투과율을 보이고 있다. 결과에서 보듯이 도출부의 적절한 조합과 배치를 통해 언급한 연구목표(와의 생성과 간섭, 방파효율 개선)를 달성하였고 추후에 돌출부의 크기와 배치, 흘수의 영향, 수심의 영향 등을 고려한 연구가 진행된다면 더욱 우수한 단면형상을 개발 할 것이라 예상된다.

• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.1
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• pp.20-27
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• 2016

The prediction of combustion instability is important to avoid an obvious threat to the structural safety and the motor performance because it affects the apparent response function of the propellant, the burning rate, and a mean flow Mach number at the local surface. The combustion instability occurs in case acoustic waves were coupled with the combustion/flow dynamic frequency. In this paper, an acoustic instability model is derived from the nonlinear wave equation for analysing acoustic dynamics in solid rocket motors. The chamber pressure and burning rate effects on combustion instability have been investigated.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.91-96
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• 2003

Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.6
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• pp.1395-1401
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• 2005

Mobile manipulator is a robot that has mobility and manipulability with the combination of the task robot and mobile robot. One of the most important feature of the Mobile Manipulator is redundant freedom. Using the redundant freedom, Mobile Manipulator can move various mode, perform dexterous motion. It can have the wider workspace and better performance in avoidance of singularity and obstacle than the fixed base structured robot. Cooperation control using the Mobile Manipulator improves the performance of the robot with redundant freedom in workspace. In this paper, configuration control of the Mobile Manipulator has been studied using Task Segment and TOMM(Task-Oriented Manipulability Measure). For verifying the proposed algorithm, we implemented a mobile manipulator, PURL-II, which is composed of a mobile robot with 3DOF and a task robot with SDOF.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.593-596
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• 2017

Sodium titanate nanosheets were prepared by a hydrothermal synthesis method under basic conditions. Ruthenium was introduced on the surface of sodium titanate nanosheets through an UV irradiation in the aqueous $RuCl_3$ solution. The crystal phase and morphology of synthesized samples were analyzed by X-ray diffraction, transmission electron microscopy and energy dispersive spectroscopy. In addition, the content of Ru was evaluated by inductively coupled plasma. It was proposed that a monomeric form of ruthenium was incorporated on the surface of sodium titanate. Ruthenium incorporated sodium titanates were applied to alcohol oxidation using molecular oxygen as an oxidant. The sample with 7% ruthenium showed a catalytic activity with a turnover frequency value of $2.1h^{-1}$ in oxidizing benzyl alcohol to benzaldehyde without any other byproducts at $105^{\circ}C$ and 1 atmosphere.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.266-270
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• 2003

We studied BCl$_3$ dry etching of GaAs in a planar inductively coupled plasma system. The investigated process parameters were planar ICP source power, chamber pressure, RIE chuck power and gas flow rate. The ICP source power was varied from 0 to 500 W. Chamber pressure, RIE chuck power and gas flow rate were controlled from 5 to 15 mTorr, 0 to 150 W and 10 to 40 sccm, respectively. We found that a process condition at 20 sccm $BCl_3$ 300 W ICP, 100 W RIE and 7.5 mTorr chamber pressure gave an excellent etch result. The etched GaAs feature depicted extremely smooth surface (RMS roughness < 1 nm), vertical sidewall, relatively fast etch rate (> $3000\AA$/min) and good selectivity to a photoresist (> 3 : 1). XPS study indicated a very clean surface of the material after dry etching of GaAs. We also noticed that our planar ICP source was successfully ignited both with and without RIE chuck power, which was generally not the case with a typical cylindrical ICP source, where assistance of RIE chuck power was required for turning on a plasma and maintaining it. It demonstrated that the planar ICP source could be a very versatile tool for advanced dry etching of damage-sensitive compound semiconductors.