• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.411-412
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• 2008

We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.413-414
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• 2008

We have studied an organic layer thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top emission device, structure is Al(100nm)ITPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(23nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. View-angle dependent emission spectra were measured for the optical measurements. Top-emission devices show that the emission peak wavelength shifts to longer wavelength as the organic layer thickness increases. For instance, it shifts from 490 to 555nm in the thickness range that we used. View-angle dependent emission spectra show that the emission intensity decreases as the view-angle increases. The organic layer thickness-dependent emission spectra show that the full width at half maximum decreases as the organic layer thickness increases. Top emission devices show that the full width at half maximum changes from 90 to 35nm as the organic layer thickness increases. In top-emission device, the microcavity effect is more vivid as the organic layer thickness increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.87-88
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• 2008

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of TPD materials. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of 2.5 $\AA$/s. When the deposition rate of TPD increased from 1.5 to 3.0 $\AA$/s, we found that the average roughness is rather smoother, external quantum efficiency is superior to the others when the deposition rate of TPD is 2.5 $\AA$/s. Compared to the ones from the devices made with the deposition rate of TPD 3.0 $\AA$/s, the external quantum efficiency was improved by a factor of eight.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.14-16
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• 2008

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO was used as an anode, and Al and LiAl were used as a cathode. A layer thickness of Al and LiAl were 100nm. Obtained built-in voltage is about 1.0V in the Al layer was used as a cathode. The obatined built-in voltage is about 1.6V in the LiAl layer was used as a cathode. The result of built-in voltage is dependent of cathode. We can see that the built-in voltage increase up to 0.4V when the LiAl layer was used as the cathode. These results correspond to the work function of LiAl which is lower than that of Al. As a result, the barrier height for an electron injection from the cathode to the organic layer could be lowered when the LiAl was used as a cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.853-858
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• 2008

The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.51-52
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• 2007

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photo current is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO and ITO/PEDOT:PSS were used as an anode, and Al and LiF/AI were used as a cathode. It was found that an incorporation of PEDOT:PSS layer between the ITO and $Alq_3$ increases a built-in voltage by about 0.4V. This is consistent to a difference of a highest occupied energy states of ITO and PEDOT:PSS. This implies that a use of PEDOT:PSS layer in anode improves the efficiency of the device because of a lowering of anode barrier height. With a use bilayer cathode system LiF/Al, it was found that the built-in voltage increases as the LiF layer thickness increases in the thickness range of 0~1nm. For 1nm thick LiF layer, there is a lowering of electron barrier by about 0.2eV with respect to an Al-only device. It indicates that a very thin alkaline metal compound LiF lowers an electron barrier height.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.402-403
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• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and a spacer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) as the blue emission and bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate $((acppy)_2Ir(acac))$ as the red emission. This spacer effectively prevented a triple-triple energy transfer between the two phosphorescent emissive layers with blue and red emission that was showed a improved lifetime. The white device showed Commission Internationale De L'Eclairage $(CIE_{x,y})$ coordinates of (0.33, 0.42) at $22400\;cd/m^2$, a maximum luminance of $27300\;cd/m^2\;at\;0.388\;mA/cm^2$, and a maximum luminous efficiency of 26.9 cd/A.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.78-80
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the Ultra Violet (UV) curable acrylate layer and MS-31 (MgO:$SiO_2$=3:1wt%) layer was adopted in organic light emitting device (OLEO) to protect organic light emitting materials from penetrations of oxygen and water vapors. The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007gm/m^{2+}day$ at $37.8^{\circ}C$ and 100% RH. This value was within the limited range of the sensitivity of WVTR measurements. And the lifetime of the HTF passivated device became almost three times longer than that of the bare device. The HTF on the OLEO was found to be very effective in protect what from the penetrations of oxygen and moisture.