• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.170-173
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• 2000

In this study, we have investigated the light-emitting property of the EL device with the thickness ratio of the HTL/ETL, which was 500$\AA$:500$\AA$, 400$\AA$:600$\AA$, 600$\AA$:400$\AA$. The ALq$_3$ was used for the ETL. We have studied the relation of voltage, contrase, efficiency for current density. Emission was observed above 10mA/$\textrm{cm}^2$ and luminance was measured to be 1030cd/$m^2$ at a current density of 100mA/$\textrm{cm}^2$ in 500$\AA$/500$\AA$ sample. A luminance of over 2500cd/$m^2$ was also observed after the final fabrication process in 500$\AA$/500$\AA$ sample

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.6 no.2
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• pp.138-145
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• 2007

Luminous traffic safety mark is restricted to use only the place that has a thick fog, many night traffic accidents, limited field of view due to structure of road. Recently, LEDs are used for luminous traffic safety mark, but we propose an organic LED for a novel luminous traffic safety mark in the near future. The device structure was $ITO/2-TNATA(500{\AA})/{\alpha}-NPD(200{\AA})/DPVBi(300{\AA})/BCP(10{\AA})/Alq_3(200{\AA})/LiF(10{\AA})/Al:Li(1000{\AA})$. The characteristics of the device are most efficient on occasion of using $N_2$ gas plasma treatment. Current density is $240.71mA/cm^2$ luminance $10,550cd/m^2$, and current efficiency 3.53cd/A at an applied voltage of 10V. The maximum EL wavelength of the fabricated blue organic light-emitting device is 456nm. CIE color coordinates are x=0.1449 and y=0.1633, which is similar to NTSC deep-blue color with CIE color coordinates of x=0.14 and y=0.08.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.6
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• pp.511-514
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• 2008

2-wavelength type white OLED devices have been made consisted of two layers; a layer with blue light emitting DPVBi host and other EML layer with yellow emitting rubrene dopant. New method to get white emitting device has been suggested by varying thicknesses of the DPVBi layer. The ITO/2-TNATA($150{\AA}$)/NPB($350{\AA}$)/DPVBi($35{\AA}$)/DPVBi:rubrene (2wt%,$200{\AA}$)/DPVBi($100{\AA}$)/Alq_3($50{\AA}$)/LiF($5{\AA}$)/Al($1000{\AA}$) structure has showed optimum results in CIE coordinates of (0.3233, 0.33). OLED devices with this structure has properties of $1.2d/m^2$ at turn-on voltage of 3.9V and $1037cd/m^2$ at 7.9V. This structure has advantages of simple fabrication and easy to emit the white color.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.899-903
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• 2013

We investigated the luminescence properties of $Alq_3$ in the device structure of ITO/CuPc/TPD/$Alq_3$/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1034-1037
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• 2002

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1026-1029
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• 2002

We report the electric properties of organic light emitting diodes (OLEDs) by controlling the carrier density according to the crystalline of copper(II) phthalocyanine(CuPc) and the irradiation light intensity. OLEDs were constructed with indium tin oxaide (ITO)/CuPc/triphenyl-diamin (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq3)/Al. The transport properties of OLEDs were changedby the heat-treatments of CuPc. The irradiation of red and blue light exciting CuPc, TPD and Alq3. And then we observed the carrier density of OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.324-325
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• 2006

In order to develop high efficiency white organic light-emitting diodes (OLEDs), OLED devices consisted of red and blue emitting layers (EMLs) were fabricated and the effect of respective layer thickness and the order of layer stacking on the luminous efficiency was evaluated Red/blue structure showed higher efficiency than blue/red, due to the higher exiton formation. In the blue layer of red/blue structure. However, the efficiency of the red/blue significantly depended on the thickness of the red layer, whereas the thickness of the blue layer was not affect so much. The optimum thickness of the red layer was 20 ${\AA}$, where the luminous and power efficiencies were 155 cd/A and 10.51 lm/W at 1000~3000$cd/m^2$ respectively and the maximum luminance was about 80,000 $cd/m^2$.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.783-785
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• 1998

In this study the emission characteristics of Sq dye undoped and doped specimen investigated. In Sq 14mol% doped specimen, OXD7 and Alq3 layer interpolated. This effect has been observed and mechanism characteristics have been examined. For OXD7 insert, hole flow the cathode intercept, and then hole accumulated. Because of increasing recombination probability of electron and hole highly pure color maintained. Simultaneously brightness characteristics and emission efficiency could improve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.77-80
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• 2002

In order to enhence the photocurrent multiplication process, we controlled the irradiation light and the material of cathode layer of organic light emitting diodes (OLEDs). The structures of OLEDs were indium tin oxaide (ITO)/ copper(II) phthalocyanine (CuPc)/triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/ aluminum (Al). We found that OLEDs were changed by the photocurrent and free charge carrier multiplication process due to the irradiation of light. The rate of photocurrent was increased by the irradiation of red and blue light.