• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.458-464
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• 1998

This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1045-1049
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• 1995

Thin films of Indium tin oxie (ITO) were prepared by the process of metal organic decomposition. Light transmittance and electrical transport properties of the films were studied with varying the firing temperature and SnO$_2$content. XRD study showed that tin substituted indium in the In$_2$O$_3$lattice. The resistivity had the minimum value of 2.5 ${\times}$ 10$\^$-3/$\Omega$-cm when the content of SnO$_2$was 9wt.%. This value was higher by a factor of 10 than the previously reported results. This difference was attributed to the low mobilities presumably caused by the fine grain size. The transmittance of ITO films in the visible range was over 90%, and the optical energy gap calculated from the absorption edge was in the range of 4.51 and 4.96eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.311-316
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• 2010

$Zr_{0.7}Sn_{0.3}TiO_4$ (ZST) thin films were fabricated by metal-organic decomposition, and their dielectric properties were investigated in order to evaluate their potential use in passive capacitors for rf and analog/mixed signal integrated circuits. The ZST thin film annealed at the temperature of $800^{\circ}C$ showed a dielectric constant of 27.3 and a dielectric loss of 0.011. The capacitor using the ZST film had quadratic and linear voltage coefficient of capacitance (VCC) of -65 ppm/$V^2$ and -35 ppm/V at 100 kHz, respectively. It also exhibited a good temperature coefficient of capacitance (TCC) value of -32 ppm/$^{\circ}C$ at 100 kHz.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.11
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• pp.1207-1212
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• 2006

In this study, Chemical Oxygen Demand(COD) which is the measure of organic substances, Total nitrogen(T-N), Total phosphorous(T-P), Fe and Mn were analyzed in the sediments of dam reservoir. The purpose of this study were to understand the relevances among the analytical methods adopted and the applicabilities of those methods. For the determination of COD, Standard Method for the Examination of Marine Environment(SMEME) and Standard Method for the Examination of Sanitary(SMES) was used. Both method had wide dynamic range and the deviations of the values obtained by two methods were small because $KMnO_4$ method closely reflected BOD and organic substances. For the determination of T-N and T-P, Standard Method for the Examination of Food(SMEF) and Standard Method for the Examination of Sanitary(SMES) were used. Two methods for T-N were both the acid-base titration but SMES gave less T-N values than SMEF because of the differences in digestion and distillation steps. Two methods for T-P gave the comparable values after acid digestion of $HNO_3$ and $HClO_4$. The determination of heavy metals as a Fe, Mn was mainly divided to the leaching method and acid digestion method. The values obtained by leaching method were less than those by digestion method. It is thought that the condition of acid digestion was more severe than that of leaching method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.226-231
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• 2014

Thin thermistor films of solutions with nickel and manganese oxides were prepared by metal-organic decomposition (MOD). The structural properties of the thin films were investigated as a function of annealing temperature. Field emission scanning electron microscope (FE-SEM) results indicated that the thin films had a thin thickness, smooth and dense surface. The crystallization temperature of $414.9^{\circ}C$ was confirmed from thermogavimetric-differential thermal analysis (TG-DTA) curve. A single phase of cubic spinel structure was obtained for the thin film annealed from $700^{\circ}C$ to $800^{\circ}C$, which was confirmed from the X-ray diffraction (XRD). From the selected area electron diffraction (SAED) in high resolution transmission electron microscope (HRTEM), the nano grains (2~3 nm) of spinel phase with (311) and (222) planes were detected for the thin film annealed at $500^{\circ}C$, which could be applicable to read-out integrated circuit (ROIC) substrate of the uncooled microbolometer with low processing temperature.