• Journal of Animal Science and Technology
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• v.44 no.1
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• pp.123-134
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• 2002

An experiment was conducted to establish the most suitable ventilation system for the enclosed nursery pig house in Korea, comparing four different ventilation systems ; i) air enters through perforated ceiling and exhausts through chimney (NA), ii) air enters through perforated ceiling and exhausts through side walls (NB), iii) air enters through perforated ducts and exhausts through side walls (NC) and iv) air enters through perforated ducts and exhausts through chimney(ND). The experiment was carried out during winter and summer separately. The experimental pigs were weaned at fourteen days old in winter (December-February) and at twenty one days old in summer (June-August). The main results of the experiment are as follows : A preliminary experiment showed that in the NC system during summer, air can reach all the pig rooms in the house and the air flow rates of the upper, middle (1.2 m height of the room) and low (at the height of pig stature) parts of the room were measured at 7.0-8.08, over 0.5 and over 0.2 m/s, respectively, which flow rates were much higher(p$<$0.05) than those in other system. At the minimum ventilation efficiency during winter, air flow rates of upper, middle and low parts of the room equipped with the NC system were detected at over 1, less than 0.5 and around 0.07 m/s, respectively. It is concluded that the separated ventilation system air-entering through ducts is the most suitable for the ventilation system of the enclosed nursery pig house and the exhausting system through side walls is more efficient for ventilation than the system through roof. Furthermore, to sustain proper temperature and reduce energy waste as well as heat consumption, a future research should be carried out to develop the environmental control system in relation to developing a heat regulator.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.427-430
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• 2001

We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.