• Bulletin of the Korean Space Science Society
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• 2010.04a
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• pp.31.3-31.3
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• 2010

인공위성은 궤도상에서 별추적기를 기준으로 자세제어를 수행한다. 이러한 별추적기의 지향방향 정밀도는 위성의 운용 및 관측성능에 커다란 영향을 미치게 된다. 따라서 별추적기의 지향방향은 초기에 설정된 지향방향으로부터 변화하지 않는 것이 중요하다. 일반적으로 별추적기는 가시영역을 확보하기 위하여 특정한 방향으로 장착되어야 하고 이를 위하여 위성 구조물과 연결시켜 주는 장착 구조물이 적용된다. 이러한 장착 구조물에는 히터가 부착되어 온도 제어를 함으로써 별추적기의 지향오차를 최소화 하도록 한다. 이 논문에서는 온도제어를 위해 히터가 작동하여 장착구조물에 온도구배가 발생할 경우 별추적기의 지향방향의 변화가 허용 가능한 수준이내에 해당하는가를 해석적으로 검토한 결과를 기술한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.194.1-194.1
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• 2016

방사성 폐기물의 운반이나 장기 보관 시 방사성 물질의 침출을 차단하기 위한 유리화 기술을 실현하기 위해 이송식 아크 플라즈마에 대해 전산해석을 수행하였다. 본 연구에서는 운전전류나 아크길이와 같은 운전조건 변화에 따른 열플라즈마의 특성 변화 뿐만 아니라 150 kW급 고출력 이송식 아크 플라즈마의 최적 설계를 위하여 핵심 부품인 파일럿 노즐의 길이와 직경 변화에 따른 예상 용융영역을 전산해석 하여 방사성 폐기물의 유리화 기술을 상업적으로 이끌어내는데 기초 자료를 제공하고자 하였다. 노즐직경은 4, 5, 6 mm로 변화시켰으며, 길이는 2, 4, 6mm로 하였다. 이러한 다양한 설계조건에 대하여 운전변수로는 전류 200 A, 방전 기체인 알곤의 유량 15 L/min, 아크 길이 2 cm로 고정하였다. 전산해석 결과 노즐직경이 작을수록 아크압축 효과에 의해 중심부에서 최고 온도가 높은 열플라즈마 제트를 발생시킬 수 있으나, 반경방향으로 온도구배가 커서 고온 구간이 급격히 감소하는 경향이 예상되었다. 반면 노즐직경이 증가할수록 아크 압축효과는 줄어들지만 반경방향으로 온도가 완만히 감소하여 콘크리트가 대부분인 유리화 대상물질을 충분히 용융시킬 수 있는 $2,600^{\circ}C$ 이상의 고온 면적이 넓어지게 될 것으로 예상되었다. 또한, 노즐길이가 줄어들 경우 아크방전의 안정성은 다소 떨어 질 수 있으나 수 있으나 고온의 열플라즈마 제트가 반경방향으로 효과적으로 넓어 질 수 있음이 예측되었다. 따라서 고온 영역의 확장 관점에서 이송식 아크 플라즈마 토치를 제작할 경우 아크의 안정성을 유지하는 범위 내에서 파일럿 노즐의 직경을 크게 하고 길이는 짧게 하는 것이 효과적인 유리화를 위해 유리할 것으로 예상되었다.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.64-72
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• 1996

Calculation of the amount of excess arsenic charge has been carried out for the single crystal growth of GaAs with 1-T HB(single temperature zone horizontal Bridgman) method which has no low temperature arsenic zone. Based upon the investigation of the thermochemical properties of the Ga and As system, a general equation for the excess dimension of the ampoule and temperature gradient of the furnace. From this result, a theoretical background of the 1-T HB method has been constructed for the single crystal growth of GaAs.

• Proceedings of the KIEE Conference
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• 1999.11b
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• pp.455-459
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• 1999

용접열영향부는 최고 도달온도로부터의 거리에 따른 온도구배 변화와 급격한 열 사이 클 때문에 조직 및 물성치의 변화가 예상되는 영역이므로 인성저하등 취성이 잠재적으로 내포된 지역임을 쉽게 예상할 수 있다. 따라서 송전 철탑용 STKT 590 용접열영향부에서의 상변태 거동과 미세조직의 변화에 따른 기계적 특성을 파악하여 용접부의 안전성 확보를 위해 용접열영향부(HAZ)의 상변태거동과 미시파괴기구를 연구하고 개선안을 도출할 필요가 있다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.77-82
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• 1992

When a crystal is grown by FZ process, the melt zone is located at between the solid of upper and lower side and is kept by the solid-liquid interface tension. On the surface of the melt zone, a surface tension gradient is occured by the difference of temperature and solute concentration, it is the driving force of marangoni flow. The crystal even in the steady state growth can become imperfect for the dislocation distribution and the solute concentration in the peripheral region of the crystal are higher than those in the inner part and the probability of the formation of the defects such as voids, bubble penetration, secondary phase creation and crack is high near the solid-liquid interface. This is because the solid -liquid interface becomes irregular because of the local variation of temperature in that region due to marangoni convection.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.30-35
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• 1996

Calcite(CaCO3) single crystals were grown hydrothermally and transmittance of as grown crystals was measured. Instead of platinium, teflon was lined onto the wall of autoclave to prevent the corrosion of autoclave wall by acidic NH4Cl solution. Spontaneous nucleation and growth of calcite crystal on teflon was reduced considerably by addition of NaCl and /or CH3COOH and applying low temperature gradient. When the temperature gradient exceeded to a few degrees from the critical temperature gradient(6-7℃), spontaneous nucleation and growth was rapidly increased in any hydrothermal solutions. Precise temperature control is thought to be the most important factor for the growth of calcite single crystal by hydrothermal technique. As grown calcite single crytal showed high transmittance compared to natural one by UV-visible analysis.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.15-19
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• 1997

Single crystals of Co-doped quartz (blue quartz) were grown hydrothermally from the $Na_2CO_3$ solution. The size of as-grown crystal was $100{\times}50{\times}35mm^3$ and the growth rate was 0.55 mm/day under the growth condition of $5wt.\%\;Na_2CO_3$ mineralizer, growth temperature of $343^{\circ}C$ and temperature gradient of $22^{\circ}C$. Visible spectrum showed a typical absorption feature of the synthetic blue quartz near 545, 570 and 643 nm. The concentration of color of the as-grown blue quartz related not to the concentration of cobalt in raw material but to the growth temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.190-195
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• 2014

Because of the temperature gradient occurring during the growth of the ingot with directional solidification method, defects are generated and the residual stress is produced in the ingot. Changing the growth and cooling rate during the crystal growth process will be helpful for us to understand the defects and residual stress generation. The defects and residual stress can affect the properties of wafer. Generally, it was found that the size of grains and twin boundaries are smaller at the top area than at the bottom of the ingot regardless of growth and cooling condition. In addition to that, in the top area of silicon ingot, higher density of dislocation is observed to be present than in the bottom area of the silicon ingot. This observation implies that higher stress is imposed to the top area due to the faster cooling of silicon ingot after solidification process. In the ingot with slower growth rate, dislocation density was reduced and the TTV (Total Thickness Variation), saw mark, warp, and bow of wafer became lower. Therefore, optimum growth condition will help us to obtain high quality silicon ingot with low defect density and low residual stress.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.1
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• pp.162-171
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• 1993

This paper deals with the anisotropy of the mushy region during solidification process of a binary mixture. A theoretical model which specifies a permeability tensor in terms of pricipal values is proposed. Also, the governing equations are modified into convenient forms for the numerical analysis with the existing algorithm. Some test computations are performed for soeidification of aqueous ammonium chloride solution contained in a square cavity. Results show that not only the present model is capable of resolving fundamental characteristics of the tranport phenomena, but also the anisotropy significantly affects the interdendritic flow structure, i.e., double-diffusive convection and macrosegregation patterns.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.11-16
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• 2019

$La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$(LSTF) coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$(BSCF) membranes which has properties of high oxygen permeability and stability to $CO_2$ were applied to a bench scale apparatus to conduct oxygen permeation experiments. Also, the membranes of the laboratory and the bench scale device were divided into three regions according to the temperature gradient in the membrane reactor for comparative analysis. While oxygen permeation experiment were conducted up to $900^{\circ}C$, temperature dependence of Cr deposition was investigated. As a result, it was confirmed that the oxygen permeability was $2.37ml/min{\cdot}cm^2$, which was significantly lower than $3.79ml/min{\cdot}cm^2$ measured in the laboratory apparatus. It was found through XRD and SEM/EDS analysis that the decrease in oxygen permeability was originated from the deposition of gaseous Cr on the membrane surface released from the alloy material of the housing. In particular, a large amount of Cr was found in the medium temperature region.