• 자연과학논문집
• /
• 제10권1호
• /
• pp.93-102
• /
• 1998

오존을 이용한 마직물의 표백효과를 연구하기 위하여 오존 발생 장치에 의해서 생성된 오존을 물에 용존시킨 오존처리액으로 마직물을 처리하였다. 마직물의 오존처리를 위하여 오존 발생기와 오존 용존조를 사용하였고, 표백 효과를 측정하기 위하여 오존으로 처리된 마직물을 Hunter의 백도, 인장강도, SEM사진을 측정하였다. 발생 오존의 농도는 전압이 높을수록, 원료 산소가스의 유량이 적을수록 증가하였다. 처리포의 표백효과는 오존의 순수 농도가 증가함에 따라 증가하였다. 처리포의 백색도는 처리온도가 $0-15^{\circ}C$, 처리시간이 20분일 때가 최적의 상태를 나타내었다. 처리포의 인장강도는 처리시간이 길수록, 온도를 높여줌에 따라 저하하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제52권12호
• /
• pp.579-585
• /
• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• 연구논문집
• /
• 통권33호
• /
• pp.99-109
• /
• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.