• Title/Summary/Keyword: 영자왜

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Magneto-Impedance Effect of Zeromagnetostrictive Amorphous Films (영자왜 아몰퍼스 박막의 자기-임피던스 효과)

  • 서강수;임재근;김대주;신용진
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1997.05a
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    • pp.38-38
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    • 1997
  • In the paper, we investigate the magneto-impedance(MI) effect of the Fe-Co-B Amorphous magnetic film, the amorphous magnetic film having near zero magnetostostriction is fabricated by using the sputtering methode, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 22% at 10[MHz] and the impedance varies about 21% at 10[Oe]. Thus, we find that the fabricated magnetic film has the characteristics of high-quality sensor element.

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Fabrication and Magnetic Properties of (Fe,Co)-B-AI-Nb Alloys with Ultrafine Grain Structure ((Fe, Co)-B-Al-Nb 초미세 결정립합금의 제조 및 자기적 특성)

  • 조용수;김윤배;김창석;김택기
    • Journal of the Korean Magnetics Society
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    • v.3 no.3
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    • pp.190-195
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    • 1993
  • 새로운 Fe기 초미세 결정립합금의 제조 가능성 및 자기특성에 관하여 조사하였다. 고포화자화 (Fe.$_{85}$Co.$_{15}$ )$_{80}$B$_{20}$ 비정질합금에서 천이금속을 약 10 at.% Al으로 치환한 (Fe.$_{85}$ Co.$_{15}$ )$_{70}$B$_{20}$Al$_{10}$ 합금은 급속응고에 의하여 비정질 기지내에 직접 .alpha. -Fe(Co)의 석출이 가능하다. 또한 (Fe.$_{85}$Co.$_{15}$ )$_{70}$B$_{20}$Al$_{10}$합금에 2~6 at.% Nb의 첨가는 급속 응고시 결정립성장을 억제하고 포화자왜를 약 6ppm이하로 감소시켜 자기 특성을 개선시킨다. 열처리에 의한 자기 특성은 Nb의 치환량이 증가할 수록 감소한다. 400 .deg. C에서 1시간 열처리한 (Fe.$_{85}$Co.$_{15}$ )$_{70}$ B$_{18}$ Al$_{10}$Nb$_{2}$합금은 평균 약 8nm이하의 .alpha. -Fe(Co) 결정립으로 구성된 초미세 결정립합금 으로 제조가 가능하며, 포화자속밀도, 철손 및 투자율 (f=50 kHz, B$_{m}$ =0.2 T)이 각각 1.2 T, 12W/kg 및 2.5 *$10^{4}$으로 가장 우수하다. 이는 Fe-Si-B-Nb-Cu 초미세결정립합금 및 영자왜 Co기 비정질합금과 거의 같은 자기특성을 나타낸다.다..다.다..낸다.다..

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Variation of Asymmetric Hysteresis Loops with Chemical Composition of Amorphous Ferromagnetic Alloys (비정질 자성 합금의 조성에 따른 비대칭 자기 이력 곡선의 변화)

  • 신경호;민성혜;이장로
    • Journal of the Korean Magnetics Society
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    • v.5 no.4
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    • pp.261-268
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    • 1995
  • In order to investigate the origin of the asymmetric magnetization reversal effect, we studied the variation of magnetic hysteresis loops with the alloy composition in amorphous ferromagnetic alloy ribbons of ${(Fe_{1-x}Co_{x})}_{75}Si_{10}B_{15}$ system annealed at $380^{\circ}C$ for 16 hours in a zero field condition. The asymmetric magnetization reversal effect developed more strongly in amorphous ribbons having two metallic components than in ribbons having a single metallic component. The effect developed more strongly in ribbons showing a smaller value of the saturation mag¬netostriction. The development of the asymmetric magnetization reversal effect was affected by the ratio of two metallic components as well as the magnitude of the saturation magnetostriction.

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Variation of Asymmetric Hysteresis Loops with Annealing Temperature and Time (열처리 온도와 시간에 따른 비대칭 자기 이력 곡선의 변화)

  • 신경호;민성혜;이장로
    • Journal of the Korean Magnetics Society
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    • v.5 no.4
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    • pp.251-260
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    • 1995
  • It has been reported that Co-based amorphous ferromagnetic alloys annealed in a small magnetic field develop a reproducible, asymmetric hysteresis loop. If the direction of the field during annealing is regarded as +, the magnetization reversal from - to + is smooth and reversible, with its slope determined by the demagnetizing field of the sample. This phenomenon is called the asymmetric magnetization reversal (AMR). The shape of the hyster-esis loop depends sensitively on the condition during the anneal and the alloy composition. Here, we report on the effect of the annealing temperature and time on AMR in a zero magnetostrictive ferromagnetic amorphous alloy. The AMR effect develops in a very short time at a reasonably high temperature, but is stabilized by annealing for a prolonged time.

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Inducdance Effects of Zeromagnetostrictive Amorphous Magnetic Films. (영자왜 마몰퍼스 자성박막의 인덕턴스효과)

  • 서강수;임재근;정승우;신용진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.136-139
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    • 1997
  • In this paper, we inveatigate frequency dependance of inductance effects of FeCoB amorphous magnetic films. First, amorphous magnetic film having near zero magnetostriction is the basic composition of (Fe$_{1-x}$ / $Co_{x}$)$_{79}$Si$_2$B$_{19}$ with x=0.94, 0.95 and in order to decrease magnetio . anisotropy, the film was annealed in 28$0^{\circ}C$/30min, 40$0^{\circ}C$/30min, 40$0^{\circ}C$/1hr with near crystallization temperature under non-magnetic field. As result of investigation, in case of x=7.95 than x=0.94, we could have obtained high values, which inductance ratios in the low frequency was 488%. And Quality factor Q was under 0.7 in all sample, in case of annealed in 28$0^{\circ}C$/30min, we could have obtained highest value, which x=0.9fl is about 0.62 in 400[kHz], and in case of x=0.95 was about 0.35 in 1[MHz].z].].

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Frequency Dependance of Inductance of FeCoB Amorphous Magnetic Films (FeCoB계 아몰퍼스 자성박막의 인덕턴스의 주파수 의존성)

  • 신용진;소대화;김현욱;서강수;임재근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.5
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    • pp.413-417
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    • 1998
  • In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

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