• Title/Summary/Keyword: 열처리 공정

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Analysis of Isoflavone Contents of Soybean By-products with Acid Hydrolysis Method (산 가수분해시 가열방법과 시간 및 추출조건에 따른 대두가공 부산물의 이소플라본 함량 변화)

  • Han, Jin-Suk;Hong, Hee-Do;Kim, Sung-Ran
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.35 no.10
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    • pp.1420-1426
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    • 2006
  • To establish a rapid and effective method for the analysis of soy isoflavone which is known to have lots of variation in derivatives of glucoside, conversion rate from isoflavone conjugates to its aglycones, and decomposition of conversed aglycones were investigated with various acid hydrolysis conditions. A number of heating conditions for acid hydrolysis including heating at convection oven $(105^{\circ}C)$, water bath $(95^{\circ}C)$, heating block $(120^{\circ}C)$, and hot plate $(120^{\circ}C)$ were applied. Acid hydrolysis in heating block with reflux was chosen as the best heating condition. From the stability test of isoflavone aglycone during acid hydrolysis, genistein, daidzein, and glycitein did not show any significant changes in their contents for 60 min of hydrolysis. Ten to thirty milligram of sample per 1 mL HCl was the best ratio of sample to acid. As conclusion, acid hydrolysis for 60 min after addition of 15 mL HCl solution to 0.5 g soybean, and then fill up to 50 mL with methanol, followed by HPLC analysis was set as a final analysis method. From this method, isoflavone contents expressed as total aglycone of feed meal was the highest with content of $1288.5{\mu}g/g$ followed by those of dehulled meal.

The Characteristic Improvement of Photodiode by Schottky Contact (정류성 접합에 의한 광다이오드의 특성 개선)

  • Hur Chang-wu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1448-1452
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    • 2004
  • In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

Fabrication of Carbon Microneedle Arrays with High Aspect Ratios and The Control of Hydrophobicity of These Arrays for Bio-Applications (고종횡비 탄소 마이크로니들 어레이의 제조 및 생체응용을 위한 소수성 표면의 제어)

  • Lee, Jung-A;Lee, Seok-Woo;Lee, Seung-Seob;Park, Se-Il;Lee, Kwang-Cheol
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.11
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    • pp.1721-1725
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    • 2010
  • This paper reports the fabrication of geometry-controlled carbon microneedles by a backside exposure method and pyrolysis. The SU-8 microneedles are a polymer precursor in a carbonization process, which geometries such as base diameter, spacing, and aspect ratio can be controlled in a photolithography step. Using this fabrication method, highly reproducible carbon microneedles, which have high aspect ratios of more than 10 and very sharp nanotips, can be realized. The quartz surface with carbon microneedles becomes very hydrophilic and its wettability is adjusted by carrying out the silane treatment. In the carbon microneedle array ($3\;{\mu}m{\times}3\;{\mu}m$), the contact angle is extremly enhanced (${\sim}180^{\circ}$); this will be advantageous in developing low-drag microfluidics and labs-on-a-chip as well as in other bio-applications.

Preparation and characterization of Ga-doped TiO2 nanofibers by electrospinning (전기방사를 이용한 Ga이 첨가된 나노섬유의 제작 및 특성평가)

  • Song, Chan-Geun;Kang, Won Ho;Yoon, Jong-Won
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.6
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    • pp.274-278
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    • 2012
  • $TiO_2$ can be used optically and is applied on many areas such as gas sensor, solar cell and photocatalysis. Electrospun nanofibers have received great interest for development and utilization in some novel applications, such as chemical sensors, dye-sensitized solar cell and photo catalysis. In this study, pure $TiO_2$ and Ga-doped $TiO_2$ nanofibers synthesized by a modified electrospinning method. The Ga doped $TiO_2$ solution is prepared by mixing poly vinyl pyrrolidone, ethyl alcohol, and titanium (IV) isopropoxide. By electrospinning these sols, nanofibers were fabricated. These fibers are heat-treated at $800^{\circ}C$ in air. The prepared pure $TiO_2$ and Ga-doped $TiO_2$ nanofibers samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy.

Study of Low-K Si-O-C-H Thin Films (Si-O-C-H 저유전율 박막의 특성 연구)

  • 김윤해;이석규;김형준
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.106-106
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    • 1999
  • 반도체 소자가 소브마이크론 이하로 집적화 되어감에 따라, RC 신호 지연 및 간섭 현상, 전력 소비의 증가 문제가 심각하게 대두되고 있다. 이러한 문제를 개선하기 위해서는, 현재 층간 절연막으로 상용화되어 있는 SiO2 박막을 대체할 저유전율 박막의 개발이 필수적이며, 많은 연구자들이 여러 가지 새로운 유기물질과 무기물질은 제안하고 있다. 반도체 공정상의 적합성을 고려할 때, 이들 여러물질 중에서 알킬기를 함유한 SiO2 박막(이하 'Si-O-C-H 박막'으로 표기)에 많은 관심이 집중되고 있다. Si-O-C-H 박막은 알킬기에 의해 형성된 나노 스케일의 기공에 의해 작은 유전율을 가지게 된다. 따라서, 박막내의 알킬기의 함유량이 많을수록 보다 작은 유전율을 얻을 수 있다. 그러나 과다한 알킬기의 함유는 Si-O-C-H 박막의 열적 특성을 열화시키는 부정적인 효과도 있다. 본 연구에서는 bis-trimethylsilylmethane(BTMSM, H9C3-Si-CH2-Si-C3H9) precursor를 이용하여 Si-O-C-H 박막을 증착하였다. BTMSM precursor의 중요한 특징중 하나는, 두 실리콘 원자 사이에 Si-CH2 결합이 존재한다는 사실이다. Si-CH2 결합은 양쪽의 Si에 의해 강하게 결합되어 있어서, BTMSM precursor를 사용하여 Si-O-C-H 박막은 유전상수도 작을 뿐 아니라, 열적으로도 안정된 특성이 얻어질 것으로 기대된다. Si-O-C-H 박막의 열적 안정성을 평가하기 위하여, 고온 열처리 전후의 FT-IR 스펙트럼 분석과 C-V(capacitance-voltage) 측정에 의한 유전상수 변화를 살펴보았다. 또한 증착된 박막의 미세구조 및 step coverage 특성 관찰을 위하여 SEM(scanning electron microscopy) 및 TEM(transmission electron micfroscopy) 분석을 하였다. 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다. 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대

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The Dielectric Properties of PLZT Thin Films as Post Annealing Temperatures of TiO2 Buffer Layer (TiO2 Buffer Layer의 후열처리 온도 증가에 따른 PLZT 박막의 유전특성에 대한 연구)

  • Yoon, Ji-Eon;Lee, In-Seok;Kim, Sang-Jih;Son, Young-Guk
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.560-565
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    • 2008
  • $(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

Thermal Inactivation of Crude Papain and Papaya Peroxidase (Papaya중의 단백질 분해 효소와 Peroxidase의 열 불활성화)

  • Park, Kwan-Hwa;Kim, Ze-Uook;Shin, Jae-Doo;Noh, Bong-Soo
    • Korean Journal of Food Science and Technology
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    • v.11 no.3
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    • pp.171-175
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    • 1979
  • Thermal properties of crude papain and crude peroxidase from domestic papaya were investigated. The crude extract of papaya was inactivated at the temperature range of $60^{\circ}{\sim}90^{\circ}C$ at pH 7.0 and the rest of the activities of papain and peroxidase were determined, respectively. The heat inactivation of papain and papaya peroxidase was biphasic at low temperature. For the thermal inactivation of papain extract, the enthalpy of activation was 91.4 kJ/mol, the entropy of activation, -49.6 J/mol K, and the free energy of activation, 108.5 kJ/mol. The activation energy for the inactivation of papaya peroxidase was 168.5 kJ/mol, the entropy of activation, $200.4\;J/mol{\cdot}K$ and the free energy of activation, 99.7 kJ/mol. The thermal stability of papain showed that it has a possibility for use as a meat tenderizer. It was also discussed that papaya peroxidase could be more suitable as a biochemical criteria for heat treatment than papaya catalase.

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Effects of the Precipitation of Carbides and Nitrides on the Texture Structures in Extra Low Carbon Steel Sheets containing B, Nb and Ti(ll) (B, Nb및 Ti를 함유한 극저탄소강에서 탄화물 및 질화물의 석출이 집합조직에 미치는 영향(ll))

  • Lee, Jong-Mu;Yun, Guk-Han;Lee, Do-Hyeong
    • Korean Journal of Materials Research
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    • v.3 no.2
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    • pp.131-139
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    • 1993
  • Abstract Alloying elements such as AI, Ti, Nb and B in the extra low carbon AI-killed steel precipitate as nitrides or carbides and change the recrystallization texture structure of the steel during heattreatment with the result of strong effects on the deep drawability of the steel sheet. In this study the effects of fine precipitates such as nitrides and carbides on the texture of extra low carbon steels into which Ti, Nb, B, P, Si and Mn were added as alloying elements were investigated by means of TEM, SEM and optical microscopic analyses. Fine N$b_2$C and T$i_2$AIN precipitates are mainly observed in the steel containing both Nb and Ti, while fine AIN and coarse BN precipitates are observed in the Nb~containing steel and coarse T${i_4}{N_3}$ and ${N_10}{N_22}$/T$i_68$ precipitates are observed in the Ti-containing steel. The grain size of the Ti containing steel is larger than that of the Nb containing steel and that of the one containing both Nb and Ti.

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Removal of Fe Impurities on Silicon Surfaces using Remote Hydrogen Plasma (리모트 수소 플라즈마를 이용한 Si 표면 위의 Fe 불순물 제거)

  • Lee, C.;Park, W.;Jeon, B.Y.;Jeon, H.T.;Ahn, T.H.;Back, J.T.;Shin, K.S.;Lee, D.H.
    • Korean Journal of Materials Research
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    • v.8 no.8
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    • pp.751-756
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    • 1998
  • Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

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Adhesion and Diffusion Barrier Properties of $TaN_x$ Films between Cu and $SiO_2$ (Cu 박막과 $SiO_2$ 절연막사이의 $TaN_x$ 박막의 접착 및 확산방지 특성)

  • Kim, Yong-Chul;Lee, Do-Seon;Lee, Won-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.3
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    • pp.19-24
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    • 2009
  • Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

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