• Composites Research
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• v.29 no.4
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• pp.156-160
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• 2016

Glassy carbon can be utilized in a variety of harsh environment due to exceptional thermal stability and chemically impermeability along with scalability and low electrical resistance. In this work, we studied effects of electron(e)-beam irradiation on thermoelectric properties of the glassy carbon film. E-beam irradiation triggered local crystallization and/or amorphization of glassy carbon thin films, which was determined by a Raman spectroscopy. The structural change by e-beam irradiation leads to the change in the doping level of the glassy carbon, which can be inferred from the change of a Seebeck coefficient and an electric conductivity. The optimal power factor we obtained for the irradiated glassy carbon film was ~200% higher than that of the non-irradiated sample.

• Journal of the KSME
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• v.46 no.7 s.308
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• pp.47-52
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.60-60
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.70-71
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• 1993

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.89-94
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• 2010

Bi-Te films were processed by coevaporation of Bi and Te dual sources with variations of the mole ratio of the Bi and Te evaporation sources, and thermoelectric properties of the coevaporated Bi-Te films were characterized. The coevaporated Bi-Te films were n-type semiconductors and exhibited Seebeck coefficients of $-60{\sim}-80{\mu}V/K$. The Terich Bi-Te film, processed with Bi and Te dual sources of 30 mol% Bi : 70 mol% Te ratio, exhibited a power factor of $5{\times}10^{-4}W/m-K^2$. On the other hand, a power factor of $17.7{\times}10^{-4}W/m-K^2$ was obtained for the Bi-rich film coevaporated using Bi and Te dual sources of 90 mol% Bi : 10 mol% Te ratio.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.1-8
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• 2008

Effects of annealing process in a reduction ambient on thermoelectric properties of the $(Bi,Sb)_{2}Te_3$ thin films prepared by thermal evaporation have been investigated. With annealing at $300^{\circ}C$ for 2 hrs in a reduction ambient(50% $H_2$+50% Ar), the crystallinity of the $(Bi,Sb)_{2}Te_3$ thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the $(Bi,Sb)_{2}Te_3$ thin films increased from$\sim90{\mu}V/K$ to $\sim180{\mu}V/K$ with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the $(Bi,Sb)_{2}Te_3$ thin films were remarkably improved for $5\sim16$ times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a $(Bi,Sb)_{2}Te_3$ evaporated film exhibited a maximum power factor of $18.6\times10^{-4}W/K^{2}-m$.

• Electrical & Electronic Materials
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• v.3 no.3
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• pp.187-194
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• 1990

광자기 메모리용 재료인 비정질 TbFe 박막을 대상으로 열자기 기록시 박막에 분포하는 온도와 이때 만들어지는 bit의 크기간에 상호관련성을 조사하였다. 레이저 조사에 의해 가열된 박막의 온도분포는 유한요소법을 이용한 열전달 해석에 의해 계산하였다. 레이저 가열종료 직전 박막 면에 분포하는 온도 contour로 부터 bit 크기를 예측하였다. 여기서 bit 크기는 온도 상승에 따라 보자력이 약화되어 외부자계와 박막반자장의 합력이 역자구를 만들어 준다고 가정하여 이 경계가 되는 온도(Tcrit)로 이루어지는 등온선의 크기로부터 정하였다. 열자기 기록 실험으로부터 기록 bit의 크기(Dmeas.)을 측정하여 레이저조사조건별로 예측한 bit크기(Dpred.)와 비교하였다. 특히, 레이저 pulse시간 변화에 따른 여러온도의 등온선 contour 직경변화를 조사하여 실측한 bit크기와 비교 검토함으로써 bit형성에 미치는 온도분포의 영향을 조사하였다. 이 결과 레이저 pulse시간이 길어지거나 레이저 power가 상대적으로 작을때 실측한 bit크기가 예측된 bit크기보다 커지는 것으로 나타났으며 이는 Tcrit 온도구배가 완만해질수록 bit경계가 되는 온도가 낮아지는 것으로 해석된다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.46-54
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• 1998

A planar Bi-Sb multijunction thermal converter, which is consisted of a linear or bifilar thin film NiCr-heater and a thin film Bi-Sb thermopile, has been fabricated, and its ac-dc transfer characteristics were examined in a frequency range from 10 Hz to 10 KHz. In order to increase the thermal sensitivity and to decrease the ac-dc transfer error of a thermal converter, the heater and the hot junctions of a thermopile were prepared on a Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-diaphragm which acts as a thermal isolation layer, and the cold junctions on the Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-thin film supported with the silicon rim which functions as a heat sink. The respective thermal sensitivities in air and in a vacuum of the converter with a built-in bifilar heater were about 14.0 ㎷/㎽ and 54.0 ㎷/㎽, and the ac-dc voltage and the current transfer difference ranges in air were about $\pm$0.60 ppm and $\pm$0.11 ppm, respectively, indicating that the ac-dc transfer accuracy of the converter are much higher than that of a commercial 3-dimensional multijunction thermal converter. However, the output thermoelectric voltage fluctuation of the converter was rather high.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2453-2458
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• 2007

The performance of polysilicon thin film transistor (p-Si TFT) has an important role in the operation of active matrix liquid crystal displays. To fabricate the p-Si TFTs that have uniform characteristics, understanding of the recrystallization mechanism of silicon is crucial. Especially, the analysis of the transient temperature variation and the liquid-solid interface motion is required to find the mechanism. The thermal conductivity is one of the most important parameters to understand the mechanism. In this work, a KrF eximer laser beam was irradiated to amorphous silicon thin films. We measured the transient reflectivity at the wavelength of 633 nm. We carried out the numerical simulation of one dimension conduction equation so that we determined the most well-fitted thermal conductivity by comparing the numerically obtained transient reflectivity with the experimentally measured one. The experimentally determined thermal conductivity of amorphous silicon thin films is 1.5 W/mK.