• Journal of the Korean Society of Safety
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• v.11 no.2
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• pp.60-66
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• 1996

In order to look into the internal structure and electrical properties of insulating Silicone rubbers added reinforcing fillers ; Silica(0-140 phr ), and to examine the behavior of charged particles, and the properties of thermally stimulated current (TSC) are investigated, respectively. From the TSC which are formed by applying the electric field of 2~5 ㎸/mm to specimen at temperature range from -150 to $270^{\circ}C$, the results arp as following. In the case of non-filled specimen, four peaks of $\delta$, $\gamma$ , $\beta$ and u are obtained at the temperature of $-120^{\circ}C$, $-60^{\circ}C$, $20^{\circ}C$ and $130^{\circ}C$, respectively and the case of filled specimen, three peaks of $\delta$, ${\alpha}_2$ and ${\alpha}_1$ are observed at the temperature of of $-120^{\circ}C$, $80^{\circ}C$ and $130^{\circ}C$, respectively. The origins of these peaks are that, the $\delta$ peak seems to the result from the contribution of side chain methyl radical, and the $\beta$ peak from the depolarization of space charge polarization owing to added imputity during during manufacturing specimens, and the $\beta$ peak from the orientation of $Si-CH_3$dipole, and the ${\alpha}_2$ near the temperature of $130^{\circ}C$ from carboxyl acid that is formed by the thermal oxidation of high temperature.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1719-1721
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• 1996

This paper describes the thermally stimulated current(TSC) of PAAS spin coated film and the electrical properties of pre TSC measurement and after TSC test specimens. The TSC measurement were performed from room temperature to about $280^{\circ}C$ and the temperature was increased by $5^{\circ}C/min$ automatically. It shows that two peaks of TSC are observed at about $50^{\circ}C$ and about $160^{\circ}C$. Result of this measurement indicate that one peak; $50^{\circ}C$ is from alkyl group; other peak at $160^{\circ}C$ is due to alkyl and C-O group of PAAS. Addition to larger peak at about $160^{\circ}C$ is due to dipolemoment of PAAS film. This result is proved by DSC measurement of PAAS film. The electrical properties of pre and after TSC were measured by currant-voltage(l-V) characteristics. The current-voltage characteristics after TSC specimens are increased the conductivity. The electrical properties of pre-after TSC measurement specimen is in the middle of imidization of PAAS. Because of this result a thermal imidization was performed at $300^{\circ}C$ for 1 hour.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.