• Title/Summary/Keyword: 열다이오드

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Operational and Thermal Characteristics of a Microchip Yb:YAG Laser (마이크로 칩 Yb:YAG 레이저의 동작 및 열적 특성)

  • Moon, Hee-Jong;Hong, Sung-Ki;Lim, Chang-Hwan
    • Korean Journal of Optics and Photonics
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    • v.22 no.2
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    • pp.96-101
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    • 2011
  • Operational and thermal characteristics of a thin disk Yb:YAG crystal with a thickness of 0.8 mm were studied using as a pumping source a fiber-coupled 930 nm laser diode. The heat generated in the crystal was dissipated by placing both surfaces in contact with copper plates with central hole, and the dependence of the temperature change in the illuminated spot on hole size was investigated by measuring the spectral change of the lasing peaks. The slope efficiency and optical-to-optical efficiency with respect to the LD pump power were as high as 42.2% and 34.8%, respectively. The temperature at the illuminated spot increased with diode current and with increasing hole size of the copper plate. When the hole size considerably exceeded the crystal thickness, the temperature rise deviated from the linear increase at high pump power.

Electrical Properties of OLEDs due to the Hole-size of Crucible Boat and Deposition Rate of Hole Transport Layer (Crucible Boat 홀 크기와 정공 수송층 증착속도에 따른 유기밭광 다이오드의 전기적 특성)

  • Kim, Weon-Jong;Shin, Hyun-Teak;Shin, Jong-Yeol;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.1
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    • pp.74-80
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    • 2009
  • In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

Environmental Test and Evaluation for LED Traffic Signal Lamps (에너지 절약형 LED 교통신호등 보급을 위한 국내 옥외 환경 시험 및 평가)

  • Yu, Seung-Weon;Jung, Bong-Man;Jeong, Hak-Geun;Han, Su-Bin;Kim, Kyu-Deok;Park, Suk-In
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.3151-3153
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    • 2000
  • 현재 국내에서 사용되는 교통신호등용 전구는 전량 해외에서 수입하는 백열전구로써 발열에 의한 낮은 발광 효율과 짧은 수명으로. 전력의 과소비와 과중한 전력요금 부담. 잦은 유지보수로 관리비용의 증가와 교통환경 악화의 원인이 되고 있으며, 국가적으로는 귀중한 에너지의 낭비, 첨두부하 증가에 따른 전력수요관리의 어려움, 발전용 화석연료 사용증가에 따른 환경오염 유발 등의 문제가 발생하고 있다. 그러나 $8{\sim}12$인치의 원형(또는 사각) PCB 기판에 수백개의 고휘도 LED(반도체 발광 다이오드, Light Emitting Diode)와 구동회로로 구성되는 LED 교통신호등은 발열에 의한 열손실이 거의 없고, 특정 파장대의 단색광을 발광하여 착색렌즈 사용에 따른 빛손실이 없어 80% 이상의 대폭적인 에너지 절약이 가능하며. 또한 긴 수명으로 유지보수비용의 절감 및 교통환경개선 효과가 크게 기대되어 미국, 일본 등 고휘도 LEB 기술 선진국을 중심으로 경쟁적으로 LED 신호등 기술개발에 심혈을 기울이고 있으며, 일부 시범 보급중에 있다. 교통신호등은 특성상 국민의 안전과 직결된 사안으로 엄격한 규격으로 제한하고 있다. 그러나 LED 신호등은 발광 원리 및 발광 방식이 기존의 전구식과 달라 현재 규정된 시험방법으로 직접 평가가 불가능하다. 따라서 우리나라의 경우 LED 제조 기술은 세계적인 수준이나 LED 신호등에 대한 기술개발 및 보급은 현실적으로 어려운 실정이다. 본 논문에서는 에너지절약형 우리나라 환경 특성에 적합한 LED 교통 신호등의 규격 제정 및 국내 보급환경 구축을 위해 LED 신호등에 대한 시제품의 특성을 장시간의 옥외 시험을 통해 평가하고자 한다.

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The Formation of the Shallow Junction by RTD and Characteristic Analysis for $n^+$ -p Diode with Ti-silicide (고속 열 확산에 의한 얕은 접합 형성과 Ti-실리시이드화된 $n^+$ -p 다이오드 특성 분석)

  • 최동영;이성욱;주정규;강명구;윤석범;오환술
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.8
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    • pp.80-90
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    • 1994
  • The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

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Three-Phase ZVS DC-DC Converter with Low Transformer Turn Ratio for High Step-up and High Power Applications (낮은 변압기 턴비를 갖는 고승압.대전력용 3상 ZVS DC-DC컨버터)

  • Kim, Joon-Geun;Park, Chan-Soo;Choi, Se-Wan;Park, Ga-Woo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.16 no.3
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    • pp.242-249
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    • 2011
  • The proposed converter has easy device selection for high step-up and high power applications since boost half bridge and voltage doubler cells are connected, respectively, in parallel and series in order to increase output power and voltage. Especially, optimized design of high frequency transformers is possible owing to reduced turn ratio and eliminated dc offset, and distributed power through three cores is beneficial to low profile and thermal distribution. The proposed converter does not necessitate start-up circuit and additional clamp circuit due to the use of whole duty range between 0 and 1 and is suitable for applications with wide input voltage range. Also, high efficiency can be achieved since ZVS turn on of switches are achieved in wide duty cycle range and ZCS turn on and off of diodes are achieved. The proposed converter was validated through 5 kW prototype.

Development of Passive Millimeter-wave Security Screening System (수동 밀리미터파 보안 검색 시스템 개발)

  • Yoon, Jin-Seob;Jung, Kyung Kwon;Chae, Yeon-Sik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.7
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    • pp.138-143
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    • 2016
  • The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

Performance Analysis of an Optical CDMA System for multi-user Environment (다중 사용자 환경에서의 광 CDMA 시스템 성능 분석)

  • 전상영;김영일;이주희
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.6B
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    • pp.1134-1141
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    • 1999
  • In this paper, we implement an optical code division multiple access(OCDMA) system and analyze the performance of the implemented system. In the implemented system, a transmitter encodes input data into optical pulses by using laser diode, and spreads the encoded pulses in an encoder which consists of 4 stage delay lines. The decoder which is the same structure as that of encoder delays and combines the spreaded pulses, and thus recovers the original data. At first, we discuss the auto- and cross-correlations of OCDMA signals under both environments of single user and multi-users, and then verify the simulation results with experimental results. We also evaluate the effect of a number of stages of delay line and code length on the system performance through computer simulations. As experimental results we can see that if the decoder have the same configuration as that of encoder, the peak auto-correlation characteristics can be achieved, and thus we can recover the original data from received data. As simulation results we can see that although bit error rate decreases as code length decreases or the number of stage of delay line increases, it is difficult to implement the system because the pulse width becomes narrow. From the results, we can apply CDMA technologies to optical communication networks.

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사파이어 기판위에 성장된 GaN의 Bow 특성 연구

  • Seo, Yong-Gon;Sin, Seon-Hye;Kim, Du-Su;Yun, Hyeong-Do;Hwang, Seong-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.222-222
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    • 2013
  • GaN 기반 반도체는 넓은 bandgap을 가지고 있어 가시광부터 자외선까지 다양한 광전소자에 유용하게 사용된다. 광전소자중 발광다이오드의 경우 대부분 사파이어 기판위에 성장된다. 하지만 사파이어와 GaN의 격자 불일치 및 열팽창 계수의 차이로 인해 고품질의 GaN를 성장하기가 어렵다. 특히 열팽창 계수의 차이는 GaN 성장 공정이 고온에서 이루어지기 때문에 성장후 상온으로 온도가 떨어질 때 웨이퍼의 bowing을 발생시키고 동시에 dislocation이나 crack과 같은 결함이 생성되 GaN 성장막의 품질을 떨어트린다. 웨이퍼의 크기가 커지면 커질수록 웨이퍼 bowing은 커져 이에 대한 연구는 중요하다. 본 논문에서 2인치 사파이어 기판위에 성장된 GaN의 bow특성을 알아보기 위해 먼저 simulation을 하였고 실제로 성장된 GaN 웨이퍼와 비교를 하였다. c-plane 사파이어 기판위에 성장된 c-plane GaN의 bow특성을 알아보기 위해 성장 온도 $1,100^{\circ}C$에서 GaN두께를 1 ${\mu}m$에서 10 ${\mu}m$까지 1 ${\mu}m$씩 변화시켜 가며 simulation을 하였다. GaN두께가 1 ${\mu}m$일때는 bow가 11 ${\mu}m$, 6 ${\mu}m$ 일때는 54.7 ${\mu}m$, 10 ${\mu}m$ 일때는 108 ${\mu}m$를 얻어 GaN두께가 1 ${\mu}m$씩 증가할 때 마다 bow가 약 10 ${\mu}m$씩 증가하였다. 성장온도에 대한 영향을 알아보기 위해 $700^{\circ}C$에서 $1,200^{\circ}C$까지 $100^{\circ}C$씩 증가시켜며 bow특성 simulation을 하였다. 6 ${\mu}m$성장된 GaN의 경우 성장온도가 $100^{\circ}C$ 씩 증가할 때 bow는 약 6 ${\mu}m$ 증가하였다. 실제 성장된 c-plane GaN웨이퍼와 비교하기 위해 GaN을 각각 3 ${\mu}m$와 6 ${\mu}m$를 성장시켰고 high resolution x-ray diffraction장비를 사용하여 bow를 측정한 결과 각각 28 ${\mu}m$와 61 ${\mu}m$ 였고 simulation결과는 각각 33 ${\mu}m$와 65.5 ${\mu}m$를 얻어 비슷한 결과를 보였다. c-plane 사파이어 기판위에 성장된 c-plane GaN는 방향에 무관하게 동일한 bow 특성을 가지는 반해 r-plane 사파이어 기판위에 성장된 a-plane GaN는 방향에 따라 다른 bow특성을 보인다. a-plane GaN 이방향성적인 bow 특성을 알아보기 위해 simulation을 하였다. $1,100^{\circ}C$에서 a-plane GaN을 성장할 때 두께가 1 ${\mu}m$ 증가할 때마다 bow가 c축 방향으로는 21.7 ${\mu}m$씩 증가하였고 m축 방향으로는 11.8 ${\mu}m$ 씩 증가하여 매우 큰 이방향성적인 bow 특성을 보였다. 실제 r-plane 사파이어 기판위에 성장된 a-plane GaN의 bow를 측정하였고 simulation 결과와 비교해 보았다.

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HVL Measurement of the Miniature X-Ray Tube Using Diode Detector (다이오드 검출기를 이용한 초소형 X선관(Miniature X-ray Tube)의 반가층 측정)

  • Kim, Ju-Hye;An, So-Hyeon;Oh, Yoon-Jin;Ji, Yoon-Seo;Huh, Jang-Yong;Kang, Chang-Mu;Suh, Hyunsuk;Lee, Rena
    • Progress in Medical Physics
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    • v.23 no.4
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    • pp.279-284
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    • 2012
  • The X ray has been widely used in both diagnosis and treatment. Recently, a miniature X ray tube has been developed for radiotherapy. The miniature X ray tube is directly inserted into the body irradiated, so that X rays can be guided to a target at various incident angles according to collimator geometry and, thus, minimize patient dose. If such features of the miniature X ray tube can be applied to development of X ray imaging as well as radiation treatment, it is expected to open a new chapter in the field of diagnostic X ray. However, the miniature X ray tube requires an added filter and a collimator for diagnostic purpose because it was designed for radiotherapy. Therefore, a collimator and an added filter were manufactured for the miniature X ray tube, and mounted on. In this study, we evaluated beam characteristics of the miniature X ray tube for diagnostic X ray system and accuracy of measuring the HVL. We used the Si PIN Photodiode type Piranha detector (Piranha, RTI, Sweden) and estimated the HVL of the miniature X ray tube with added filter and without added filter. Through an another measurement using Al filter, we evaluated the accuracy of the HVL obtained from a direct measurement using the automatic HVL calculation function provided by the Piranha detector. As a result, the HVL of the miniature X ray tube was increased around 1.9 times with the added filter mounted on. So we demonstrated that the HVL was suitable for diagnostic X ray system. In the case that the added filter was not mounted on, the HVL obtained from use of the automatic HVL calculation function provided by Piranha detector was 50% higher than the HVL estimated using Al filter. Therefore, the HVL automatic measurement from the Piranha detector cannot be used for the HVL calculation. However, when the added filter was mounted on, the HVL automatic measurement value using the Piranha detector was approximately 15% lower than the estimated value using Al filter. It implies that the HVL automatic measurement can be used to estimate the HVL of the miniature X ray tube with the added filter mounted on without a more complicated measurement method using Al filter. It is expected that the automatic HVL measurement provided by the Piranha detector enables to make kV-X ray characterization easier.

Effect of Supplementary Radiation on Growth of Greenhouse-Grown Kales (온실재배 케일의 생장에 미치는 보광효과)

  • Heo, Jeong-Wook;Kim, Hyeon-Hwan;Lee, Kwang-Jae;Yoon, Jung-Boem;Lee, Joung-Kwan;Huh, Yoon-Sun;Lee, Ki-Yeol
    • Korean Journal of Environmental Agriculture
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    • v.34 no.1
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    • pp.38-45
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    • 2015
  • BACKGROUND: For commercial production of greenhouse crops under shorter day length condition, supplementary radiation has been usually achieved by the artificial light source with higher electric consumption such as high-pressure sodium, metal halide, or incandescent lamps. Light-Emitting Diodes (LEDs) with several characteristics, however, have been considered as a novel light source for plant production. Effects of supplementary lighting provided by the artificial light sources on growth of Kale seedlings during shorter day length were discussed in this experiment. METHODS AND RESULTS: Kale seedlings were grown under greenhouse under the three wave lamps (3 W), sodium lamps (Na), and red LEDs (peak at 630 nm) during six months, and leaf growth was observed at intervals of about 30 days after light exposure for 6 hours per day at sunrise and sunset. Photosynthetic photon flux (PPF) of supplementary red LEDs on the plant canopy was maintained at 0.1 (RL), 0.6 (RM), and $1.2(RH){\mu}mol/m^2/s$ PPF. PPF in 3 W and Na treatments was measured at $12{\mu}mol/m^2/s$. Natural light (NL) was considered as a control. Leaf fresh weight of the seedlings was more than 100% increased under the 3 W, Na and RH treatment compared to natural light considering as a conventional condition. Sugar synthesis in Kale leaves was significantly promoted by the RM or RH treatment. Leaf yield per $3.3m^2$ exposed by red LEDs of $1.2{\mu}mol/m^2/s$ PPF was 9% and 16% greater than in 3W or Na with a higher PPF, respectively. CONCLUSION: Growth of the leafy Kale seedlings were significantly affected by the supplementary radiation provided by three wave lamp, sodium lamp, and red LEDs with different light intensities during the shorter day length under greenhouse conditions. From this study, it was suggested that the leaf growth and secondary metabolism of Kale seedlings can be controlled by supplementary radiation using red LEDs of $1.2{\mu}mol/m^2/s$ PPF as well as three wave or sodium lamps in the experiment.