• Title/Summary/Keyword: 연마패드

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Slurry Particle behavior inside Pad Pore during Chemical Mechanical Polishing (기계화학적 연마공정중 패드내 미세공극에서의 연마입자의 거동)

  • Kwark, Haslomi;Yang, Woo-Yul;Sung, In-Ha
    • Tribology and Lubricants
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    • v.28 no.1
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    • pp.7-11
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    • 2012
  • In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

Molecular Dynamics Study on Property Change of CMP Process by Pad Hardness (CMP 공정에서 연마패드 경도에 따른 연마 특성 변화 분자동력학 연구)

  • Kwon, Oh Kuen;Choi, Tae Ho;Lee, Jun Ha
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.1
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    • pp.61-65
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    • 2013
  • We investigated the wearable dynamics of diamond spherical abrasive during the substrate surface polishing under the pad compression via classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. The pad hardness had a big impact on the wearable dynamics of the abrasive. The moving speed of the abrasive decreased with increasing hardness of the pad. As the hardness decreased, the abrasive was indented into the pad and then the sliding motion of the abrasive was increased. So the pad hardness was greatly influenced on the slide-to-roll ratio as well as the wearable rate.

Molecular Dynamics Simulations Study on Abrasive's Speed Change Under Pad Compression (연마패드 압력에 따른 연마입자 이동속도 변화의 분자동역학적 시뮬레이션 연구)

  • Lee, Gyoo-Yeong;Lee, Jun-Ha;Kim, Tae-Eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.7
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    • pp.569-573
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    • 2012
  • We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

Hydrodynamic Lubrication Model for Chemical Mechanical Planarization (유체윤활을 고려한 화학기계적 연마 공정에서의 연마대상과 패드 사이의 유동장 해석)

  • 김기현;오수익;전병희
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.207-210
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    • 2003
  • The chemical mechanical planarization (CMP) process is a method of planarizing semiconductor wafers with a high degree of success. However, fundamental mechanisms of the process are not fully understood. Several theoretical analyses have been introduced, which are focused on kinematics, von Mises stress distributions and hydrodynamic lubrication aspects. This paper is concerned with hydrodynamic lubrication theory as the chemical mechanical planarization model; the three-dimensional Reynolds equation is applied to predict slurry film thickness and pressure distributions between the pad and the wafer. This paper classifies geometry of wafer into 3 types and focuses on the differences between them.

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The Effect of Pad Groove Dimension on Polishing Performance in CMP (CMP에서 패드 그루브의 채수가 연마특성에 미치는 영향)

  • Park, Ki-Hyun;Kim, Hyung-Jae;Jeong, Young-Seok;Jeong, Hae-Do;Park, Jae-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1308-1311
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    • 2004
  • It is very important that get polishing characteristic that to be stable that accomplish planarization of high efficiency in chemical mechanical polishing, and there is repeatability Groove of pad causes much effects in flow of slurry among various factors that influence in polishing characteristic, is expected to cause change of lubrication state and polishing characteristic in contact between wafer and pad. Therefore, divided factors of pad groove by groove pattern, groove profile, groove dimensions. This research wishes to study effect that dimension of pad groove gets in polishing performance. When changed dimension (width, depth, pitch of groove) of groove, measured change of removal rate and friction force. According as groove dimension changes, could confirm that removal rate and friction force change. While result of this experiment studies effect of pad groove in CMP, it is expected to become small help.

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Study on the Abrasive Capsulation Pad in Interlayer Dielectric Chemical Mechanical Polishing (층간절연막 화학기계연마에서 입자코팅패드에 관한 연구)

  • Kim, Ho-Yun;Park, Jae-Hong;Jeong, Hae-Do;Seo, Hyeon-Deok;Nam, Cheol-U;Lee, Sang-Ik
    • Journal of the Korean Society for Precision Engineering
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    • v.18 no.11
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    • pp.168-173
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    • 2001
  • The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.

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High Efficient Finishing Process for Press Dies by Cast Iron Bonded Diamond Pellet (1) (주철본드 다이아몬드 팰렛에 의한 프레스 금형의 고능률 연마가공 (1))

  • Hwang, Chan-Hae;Yoo, Kee-Tae;Jeong, Hae-Do;Ahn, Dae-Kyun
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.3 s.96
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    • pp.84-90
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    • 1999
  • The finishing process for dies and molds is directly related to finished surface quality, but many parts of process depend on human labor which needs much time and value. So automatic finishing machine has been produced for dies and molds, and applied widely for finishing process. Conventionally finishing machine has applied resin bonded finishing pad as a tool, but the removal ability of pad decreases greatly as finishing process goes on. In the finishing mechanism for dies and molds, finishing process is affected severely by cutting process, so can be divided into removing cusp and smoothing surface process. So, this study investigated the application of cast iron bonded diamond pellet for press dies, which is considered to have better characteristics than the other metal bonded pellets. The finishing characteristics were compared the between finishing pellet and pad. And finishing performance was appraised as the several cutting surfaces.

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