• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.27-28
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• 2011

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.139-140
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• 2010

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.9
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• pp.923-928
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• 2015

In this paper, we propose an ultrasonic magnetic abrasive polishing (US-MAP) technique to effectively machine a high-strength material, and we prove the efficiency of hybrid finishing. We use Taguchi's experimental method to determine the influence of each parameter. Based on the results, US-MAP exhibited a higher polishing efficiency than traditional MAP, and a suitable frequency for hybrid finishing was 28 kHz. When investigating the effect of the parameters on the surface roughness, the ultrasonic amplitude had the greatest effect. However, when machining with $55-{\mu}m$ amplitude, the machining efficiency decreased as the magnetic flux density varied.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.3
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• pp.259-264
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• 2012

Automatic magnetic abrasive polishing (MAP), which can be applied after machining of a mold on a machine tool without unloading, is very effective for finishing a free-form surface such as a complicated injection mold. This study aimed to improve the efficiency of MAP of a non-ferrous mold surface. The magnetic array table and control of the electromagnet polarity were applied in the MAP of a free-form surface. In this study, first, the magnetic flux density on the mold surface was simulated to determine the optimal conditions for the polarity array. Then, the MAP efficiency for polishing a non-ferrous mold surface was estimated in terms of the change in the radius of curvature and the magnetic flux density. The most improved surface roughness was observed not only in the upward tool path but also in the working area of larger magnetic flux density.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.9
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• pp.1037-1041
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• 2014

Slurry used for polishing semiconductors processed by exchange, pressurization, and multi-step feeding has been studied to investigate the effect of the size and shape of slurry particles on the oxide CMP removal rate. First, spherical silica sol was prepared by the ion exchange method. The spherical silica particle was used as a seed to grow non-spherical silica sol in accordance with the multi-step feeding of silicic acid by the ion exchange and pressurization methods. The oxide removal rate of both non-spherical silica sol and commercially available slurry were compared with increasing average particle size in the oxide CMP. The more alkaline the pH level of the non-spherical silica sol, the higher was the removal rate and non-uniformity.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.4
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• pp.401-407
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• 2011

The conventional method of magnetic abrasive polishing is not suitable for non-magnetic materials because such polishing is basically possible when magnetic force exists and the magnetic force in non-magnetic materials is very low. The installation of an electromagnet under the working area of a non-magnetic material, which is called second-generation magnetic abrasive polishing in this study, can enhance the magnetic force. Experimental evaluation and optimization of process parameters for polishing magnesium alloy steel was performed by adopting the design of experiments and the response surface method. The results indicated that the intensity of the magnetic force and spindle speed are significant parameters that affect the improvement of surface roughness. A prediction model for the surface roughness of the magnesium alloy steel is developed using the second-order response surface method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.850-853
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• 2000

최근에 초정밀 제조업 분야에서 볼의 이용에 관한 연구가 급속히 진행되고 있으며, 일부 반도체 분야에서는 BGA(Ball Grid Array)와 같은 용도로 이용되기도 하며, 볼 자체를 반도체 칩으로 응용하려는 시도가 제안되어 있다. 이러한 적용분야들에서 볼의 진구도, 정밀도 및 청정도 등을 만족시킬 수 있는 가공기술이 선결되어야 한다. 본 연구에서는 초정밀 볼의 가공기술 개발을 목적으로 하여 유리 볼을 대상으로 하고 $H_2O$와 CeO$_2$를 혼합한 연마재를 사용하여 부상회전에 의한 비접촉식 연마방법을 제안하고 가공특성을 조사하였다 연구 결과로서, 비 접촉식 볼의 가공에서는 가공에 앞서 $H_2O$와의 전처리 과정을 거침으로 해서 가공속도를 촉진시킬 수 있다는 사실이 확인되었다.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.525-529
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• 1999

A cone shape drum polisher was developed to make up for the demerits of conventional CMP apparatus. The developed equipment has several superiorities. First of all, it can achieve uniform velocity profile on all the contact line because of its shape and easy to control the amount of slurry at the position of use. The whole area of wafer surface is exposed to the visual area except the contact line between wafer and drum, hence we can detect polishing end point more easily than any other polishing equipments. Also it has additional merits such as small foot print and polishing load. Polishing characteristics were investigated by developed equipment.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.7
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• pp.627-631
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• 2015

Conventional etching technology is in the face of problems such as dishing, erosion resulting from non-uniform removal of film. Advanced printed circuit board (PCB) requires accurate wire formation with the aid of planarization by chemical mechanical polishing (CMP). Linear roll CMP is a line contact continuous process which removes the film by pressurization and rotation while slurry is supplied to polishing pad attached to the roll. This paper focuses on the design of floating nozzle on the linear roll CMP equipment which makes the slurry supply uniformly on the roll pad. Experimental results show that removal rate using the floating nozzle increases 3 times higher than that without it and non-uniformity is less than 15%.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.11
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• pp.46-52
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• 2004

CMP (Chemical-Mechanical Polishing) is a process in which both chemical and mechanical mechanisms act simultaneously to produce the planarized wafer. CMP process is an extensive usage and continuing high growth rates in the semiconductor industry. The understanding of the process, however, is much slower. The nature of material removal from the wafer is still undefined and ambiguous. Material removal rate according to the slurry flow rate is also undefined and ambiguous. Thus, in this study, the basic mechanism of material removal rate as slurry flow rate is defined in terms of energy supply and energy loss.