• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.279-285
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• 2003

Wide- and flat-gain laser diodes were designed and fabricated from asymmetric multiple quantum well (AMQW) structures which consist of three compressively strained InGaAsP wells of different thicknesses. For a 400 ${\mu}{\textrm}{m}$-long lasers with as-cleaved facets, -1 ㏈ and -3 ㏈ gain bandwidth were 45 nm and 80 nm, respectively. For this AMQW structure, calculated gain spectra with various line broadening functions were compared with experimental results. We confirmed the calculated gain spectra using an asymmetric line broadening function were in good agreement with the measured data.

• Analytical Science and Technology
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• v.16 no.4
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• pp.269-276
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• 2003

A new type of stripping voltammetry, inverted catalytic stripping voltammetry $IC_tSV$, is introduced. The rhodium-formaldehyde complex in hydrochloric acid gives an inverted catalytic hydrogen peak (reduction current peak during positive-going scan). The characteristics of the inverted peak were studied. By using the peak as analytical peak the detection limit of $1.2{\times}10^{-10}M$ Rh (50s preconcentration) can be reached at the optimal conditions: 0.015% (W/V) HCHO-0.42 M HCl; accumulation potential, -1.1 V; scan rate, 100 mV/s.

• Korean Chemical Engineering Research
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• v.54 no.5
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• pp.593-597
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• 2016

The effects of relative humidity, current density and temperature on the ionic conductivity were studied in PEMFC (Proton Exchange Membrane Fuel Cell). Water contents and water flux in the electrolyte membrane largely affected ion conductivity. The water flux was modelled and simulated by only electro-osmotic drag and back-diffusion of water. Ion conductivities were measured at membrane state out of cell and measured at MEA (Membrane and Electrode Assembly) state in condition of operation. The water contents in membrane increase as relative humidity increased in PEMFC, as a results of which ion conductivity increased. Current enhanced electro-osmotic drag and back diffusion and then water contents linearly increased. Enhancement of current density results in ion conductivity. Ion conductivity of about 40% increased as the temperature increased from $50^{\circ}C$ to $80^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.1
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• pp.223-228
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• 2017

In this paper, we are proposing an optimal design of wideband pulsed type gamma-ray sensors. These sensors were manufactured based on the design results and after word electrical properties were analyzed. The sensor input parameters were derived on the basis of pulsed gamma-ray spectrum and time-dependent energy rate, and the output current which were derived on the basis of the sensor sensitivity control circuit. Pulsed gamma-ray sensors were designed using the TCAD simulators. The design results show that the optimal Epi layer thickness is 45um with the applied voltage 3.3V and the diameter is 2.0mm. The doping concentrations are as follows : N-type is an Arsenic as $1{\times}10^{19}/cm^3$, P-type is a Boron as $1{\times}10^{19}/cm^3$ and Epi layer is Phosphorus as $3.4{\times}10^{12}/cm^3$. The fabricated sensor was a leakage current, 12pA at voltage -3.3V and fully depleted mode at voltage -5V. A test result of pulsed radiation shows that the sensor gives out the optimal photocurrent.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.274-280
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• 2000

This paper deals with an experimental study to apply commercial semiconductors to measure radiation dose rate for gamma ray. Since the low cost, small size, high efficiency and ruggedness of silicon photodiodes make them attractive photodetectors, they coulde be effectively used in measuring any radiation such as gamma ray. Most PN photodiodes show that the reverse current increases when the light is increased. Therefore the depletion region of them have influence on the reverse current, so we choose silicon PIN photodiodes with large depletion region. In order to detect radiation dose rate and then, to apply in developing any gamma ray dosimeter, some examinations and experiments were performed to PIN photodiodes in this work. Two kinds of PIN photodiodes, such as NEC's PH302 and SIEMENS's BPW34, were tested in a Co-60 gamma irradiation facility with a semiconductor parameter analyzer. As a result, we found that such PIN photodiodes present good linearity in diode current characteristics with dose rate. Therefore silicon PIN photodiodes could be suitably used in designing gamma ray dosimeters.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.45-50
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• 2006

Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.83-89
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• 2014

A ku-band complementary cross-coupled differential voltage controlled oscillator is designed, measured and fabricated using $0.18-{\mu}m$ CMOS technology. A 2.4GHz of very wide frequency tuning at oscillating frequency of 14.5GHz is achieved with presented circuit topology and MOS varactors. Measurement results show -1.66dBm output power with 18mA DC current drive from 3.3V power supply. When 5V is applied, the output power is increased to 0.84dBm with 47mA DC current. -74.5dBc/Hz phase noise at 100kHz offset is measured. The die area is $1.02mm{\times}0.66mm$.

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.421-428
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• 2012

We investigated an electrochemical properties for Langmuir-Blodgett (LB) nano-films of polyimide and phospholipid mixture. LB films of polyamic acid and phospholipid monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in $KClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100, 150, 200 and 250 mV/s, respectively. As a result, monolayer LB films of polyamic acid and phospholipid mixture was appeared on irreversible process caused by the reduction current from the cyclic voltammogram. Diffusion coefficient (D) effect in the polyamic acid and phospholipid mixture was used in the LAPC with LLPC fewer than the diffusion coefficient values.

• Journal of the Korean Applied Science and Technology
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• v.29 no.2
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• pp.311-316
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• 2012

We are investigated to an electrochemical characteristic for Langmuir-Blodgett (LB) films by cyclic voltammetry method. The phospholipid compound was deposited by using the LB method on the Indium tin oxide(ITO) glass. We tried to measure the electrochemical by using cyclic voltammetry with three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) in 0.5, 1.0, 1.5 and 2.0 N $NaClO_4$ solution. A measuring range was reduced from initial potential -1350 mV, continuously oxidized to 1650 mV. As a result, LB films of the phospholipid compounds are appeared irreversible process caused by only the oxidation current from the cyclic voltammogram. The diffusivity(D) effect of LB films decreased with increasing of phospholipid compound amount.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.11
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• pp.29-34
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• 1999

In this paper, a current comparative frequency automatic tuning circuit for the CMOS gm-C bandpass filters are designed with the new architecture. And also, when the designed circuit is compared to the typical tuning circuit, the designed circuit has very simple architecture that is composed of the current comparator and charge pump and operating in 3V power supply. The proposed tuning circuit automatically compensates the difference between the operating current of the transconductor and the specified reference Current. Using CMOS 0.8um parameter a biquad gm-C bandpass filter with center frequency($f_\circ$=60MHz) is designed, and according to the transistor size the variation of the center frequency is simulated. As the HSPICE simulation results, the tuning operation of the proposed current comparative frequency automatic tuning circuit is verified.