• Journal of the Korean Society of Radiology
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• v.16 no.7
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• pp.969-974
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• 2022

In order to maximize dynamic range and to minimize image lag in digital X-ray imaging, diminishing residual parasitic capacitance in photodiode in pixels is critically necessary. These requirements are more specifically requested in dynamic X-ray imaging with high frame rate and low image lag for industrial 2D/3D automated X-ray inspection and medical CT imaging. This study proposes duoPIX^TM X-ray imaging sensor for the first time that is composed of reset thin film transistor, readout thin film transistor and photodiode in a pixel. To verify duoPIX^TM X-ray imaging sensor, designing duoPIX^TM pixel and imaging sensor was executed first then X-ray imaging sensor with 105 ㎛ pixel pitch, 347 mm × 430 mm imaging area and 3300 × 4096 pixels (13.5M pixels) was fabricated and evaluated by using module tester and image viewer specifically for duoPIX^TM imaging sensor.

• Journal of the Korean Society of Radiology
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• v.17 no.3
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• pp.359-365
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• 2023

In order to satisfy the requirements of dynamic X-ray imaging with high frame rate and low image lag, minimizing parasitic capacitance in photodiode and overlapped electrodes in pixels is critically required. This study presents duoPIX^TM dynamic X-ray imaging sensor composing of readout thin film transistor, reset thin film transistor and photodiode in a pixel. Furthermore, dynamic X-ray detector using duoPIX^TM imaging sensor was manufactured and evaluated its X-ray imaging performances such as frame rate, sensitivity, noise, MTF and image lag. duoPIX^TM dynamic X-ray detector has 150 × 150 mm² imaging area, 73 um pixel pitch, 2048 × 2048 matrix resolution(4.2M pixels) and maximum 50 frames per second. By means of comparison with conventional dynamic X-ray detector, duoPIX^TM dynamic X-ray detector showed overall better performances than conventional dynamic X-ray detector as shown in the previous study.

• Journal of the Korean Society of Radiology
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• v.17 no.4
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• pp.625-631
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• 2023

The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2237-2246
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• 2012

A bias circuit required for an oral sensor is manufactured inside the oral sensor chip to reduce its size and cost. The proposed DC-DC converter supplies the required reference and bias currents for their corresponding regulators by using IREF of the reference current generator. Their target voltages of the voltage regulators are regulated by the negative mechanism by generating their reference voltages required for their corresponding regulators. In addition, a constant current IB0/IB1 is supplied by being mirrored by a current mirror ratio and then VREF is generated. It is confirmed by measurements that the average volatge, ${\sigma}$, and $4{\sigma}$ of the designed DC-DC converter for intra oral sensors with a $0.18{\mu}m$ X-ray CMOS process are within their required ranges. And the line-pair pattern image shows a high-resolution characteristic without blurring. Also, a good oral image can be obtained.