• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.256-256
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• 2008

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.30-36
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• 2006

A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1058-1062
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• 1997

강유전체 전계효과를 관찰하기 위해 LaCoO$_{3}$/Pb(Zr, Ti)O$_{3}$(La, Sr)CoO$_{3}$ 다층구조를 LcOo$_{3}$가 기판 위에 pulsed laser deposition(PLD)법으로 에피택셜하게 성장시켰다. 이러한 다층구조에서는 전도성 채널층으로 Si대신 반도성 LaCoO$_{3}$가 사용 되었다. LaCoO$_{3}$(LCO)의 비저항은 산소 분위기에 의하여 변화되었는데 특히 증착시 산소 분위기에 의존함을 보였다. LCO의 비저항은 0.1-100Ωcm범위에서 변화되었다. LCO층에 유도되는 강유전체 전계효과는 Pb(Zr, Ti)O$_{3}$(PZT)의 분극 상태에 따른 LCO의 저항 변화를 측정함으로써 관찰되었는데 1020$\AA$ 두께를 가진 LCO층에서는 4%의 저항 변화를 얻었으며 680$\AA$의 LCO에서는 9%의 증가된 저항 변화를 얻었다. DC 바이어스(-5V)를 가한 후에는 저항 변화가 45%까지 증가하였다. 이러한 결과는 적당한 비저항을 갖는 LCO를 사용한 LCO/PZT/LSCO다층구조가 강유전체 전계효과 트랜지스터로 사용될 수 있다는 가능성을 제시하고 있다.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.156-159
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• 2008

The electrical characteristic of SiGe-on-SOI (SGOI) wafer with different Ge concentration were evaluated by pseudo-MOSFET. Epitaxial SiGe layers was grown directly on top of SOI with Ge concentrations of 16.2, 29.7, 34.3 and 56.5 at.%. As Ge concentration increased, leakage current increased and threshold voltage shifted from 3 V to 7 V in nMOSFET, from -7 V to -6 V in pMOSFET. The interface states between buried oxide and top of Si was significantly increased by the rapid thermal annealing (RTA) process, and so the electrical characteristic of SGOI wafer degraded. On the other hand, additional post RTA　annealing (PRA) showed that it was effective in decreasing the interface states generated by RTA processes and the electrical characteristic of SGOI wafer enhanced higher than initial state.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.233-241
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• 2012

We have deposited the bilayer consisted of the underlayer and the overlayer by using DC magnetron sputter on Single crystal MgO (001) substrate. This bilayer was fabricated at fixed annealing temperature and time. We have controlled agglomeration effect by changing of the bilayer thickness. Finally, we have made the self-organization and nano-structured film. In this processing, we have made nano-dot which consists of the underlayer and the overlayer, unlike the existing method called the agglomeration effect in the single layer. The underlayer has deposited using Ti, Cr and Co. And the overlayer has deposited with Ag. Through the analysis of Atomic force microscopy (AFM), the microstructure of underlayer is observed by AFM to confirm the formation of nano-dot. As the nano-dot through above processing, we have found that the nano-dot has the different shape. As a result, when we manufactured nano-dot through the agglomeration effect of bi-layer, the best matching material is Ti for underlayer. And also, we have found that MgO/Ti/Ag samples have been grown expitaxially toward the direction of MgO (001) by X-ray Diffraction analysis.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1182-1189
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• 1998

High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.