• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.953-958
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• 2001

The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.273-279
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• 2000

Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.