• 제목/요약/키워드: 알에프 스위치

검색결과 3건 처리시간 0.016초

표면미세가공시 발생하는 MEMS 구조물의 변형 억제 (Alleviating Deformation of MEMS Structure in Surface Micromachining)

  • 홍석관;권순철;전병희;신형재
    • 한국정밀공학회지
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    • 제23권8호
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    • pp.163-170
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    • 2006
  • By removing sacrificial layer through ashing process, movable MEMS structure on substrate can be fabricated in surface micromachining. However, MEMS structure includes, during the ashing process, the warping or buckling effects due to stress gradient along the vertical direction of thin film. In this study, we presented method for counteracting the unwanted deflection of MEMS structure and designed using character of deposit process to overcome limited design conditions. Unit cell patterns were designed with character of deposit shape, and their final shapes were adopted using Finite Element Method. Finally, RF MEMS switch was fabricated by surface micro machining as test vehicles. We checked out that alleviation effect for deformation of switch improved by 35%.

SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계 (Design of pHEMT channel structure for single-pole-double-throw MMIC switches)

  • 문재경;임종원;장우진;지흥구;안호균;김해천;박종욱
    • 한국진공학회지
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    • 제14권4호
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    • pp.207-214
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    • 2005
  • 본 연구에서는 스위치, 위상변위기, 감쇄기등 전파제어회로를 설계 및 제작할 수 있는 pHEMT스위치 소자에 적합한 에피구조를 설계하였다. 고성능의 스위치 소자를 위한 pHEMT 채널층 구조는 이중 면도핑층을 가지며 사용 중 게이트 전극의 전계강도가 약한 깊은 쪽 채널층의 Si 면농도가 상층부보다 약 1/4정도 낮을 경우 격리도등 우수한 특성을 보였다. 설계된 에피구조와 ETRI의 $0.5\mu$m pHEMT MMIC 공정을 이용하여 2.4GHz 및 5GHz 대역 표준 무선랜 단말기에 활용 가능한 SPDT Tx/Rx MMIC 스위치를 설계 및 제작하였다. 제작된 SPDT형 스위치는 주파수 6.0 GHz, 동작전압 0/-3V에서 삽입손실 0.849 dB, 격리도 32.638 dB, 그리고 반사손실 11.006 dB의 특성을 보였으며, 전력전송능력인 $P\_{1dB}$는 약 25dBm, 그리고 선형성의 척도인 IIP3는 42 dBm 이상으로 평가되었다. 이와 같은 칩의 성능은 본 연구에서 개발된 SPDT 단일고주파집적회로 스위치가 2.4GHz뿐만 아니라 SGHB 대역 무선랜 단말기에 활용이 충분히 가능함을 말해준다.

엠보싱 및 버링 공법을 이용한 휴대폰용 초정밀 알 에프 스위치 커넥터 쉘 개발 (Development of High Precision R/F Switch Connector Shell for Mobile Phone by Embossing and Burring Process)

  • 최홍석;신현집;김병민;고대철
    • 소성∙가공
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    • 제22권6호
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    • pp.317-322
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    • 2013
  • A radio frequency(R/F) switch connector is widely used in wireless devices such as mobile phone and navigator to check defects of the circuit board of product. The R/F switch connector shell plays a role in protecting the switch connector. Previously, this part was machined using a turning, which is time-consuming and has poor material utilization. Furthermore, the workpiece material of brass containing lead that has excellent machinability has environmentally regulated during recent years. The purpose of the current study was to develop the connector shell by forming through progressive dies including embossing, burring and forging process in order to achieve higher productivity and dimensional accuracy without tool failure. To accomplish this objective, a strip layout was designed and finite element (FE) analysis was performed for each step in the process. Try-out for the connector shell was conducted using progressive die design based on FE-analysis results. Dimensional accuracy of developed part was investigated by scanning electron microscopy. The result of the investigation for the dimensions of the formed connector shell showed that the required dimensional accuracy was satisfied. Moreover, productivity using the progressive die increased four times compared to previous machining process.