• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.163-170
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• 2006

By removing sacrificial layer through ashing process, movable MEMS structure on substrate can be fabricated in surface micromachining. However, MEMS structure includes, during the ashing process, the warping or buckling effects due to stress gradient along the vertical direction of thin film. In this study, we presented method for counteracting the unwanted deflection of MEMS structure and designed using character of deposit process to overcome limited design conditions. Unit cell patterns were designed with character of deposit shape, and their final shapes were adopted using Finite Element Method. Finally, RF MEMS switch was fabricated by surface micro machining as test vehicles. We checked out that alleviation effect for deformation of switch improved by 35%.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Transactions of Materials Processing
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• v.22 no.6
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• pp.317-322
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• 2013

A radio frequency(R/F) switch connector is widely used in wireless devices such as mobile phone and navigator to check defects of the circuit board of product. The R/F switch connector shell plays a role in protecting the switch connector. Previously, this part was machined using a turning, which is time-consuming and has poor material utilization. Furthermore, the workpiece material of brass containing lead that has excellent machinability has environmentally regulated during recent years. The purpose of the current study was to develop the connector shell by forming through progressive dies including embossing, burring and forging process in order to achieve higher productivity and dimensional accuracy without tool failure. To accomplish this objective, a strip layout was designed and finite element (FE) analysis was performed for each step in the process. Try-out for the connector shell was conducted using progressive die design based on FE-analysis results. Dimensional accuracy of developed part was investigated by scanning electron microscopy. The result of the investigation for the dimensions of the formed connector shell showed that the required dimensional accuracy was satisfied. Moreover, productivity using the progressive die increased four times compared to previous machining process.