• Title/Summary/Keyword: 실린더 마스크

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Continuous Photolithography by Roll-Type Mask and Applications (롤타입 마스크를 이용한 연속 포토리소그래피 기술과 그 응용)

  • Kwak, Moon-Kyu
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.36 no.10
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    • pp.1011-1017
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    • 2012
  • We report the development of an optical micro-nanolithography method by using a roll-type mask. It includes phase-shift lithography and photolithography for realizing various target dimensions. For sub-wavelength resolution, a structure is achieved using the near-field exposure of a photoresist through a cylindrical phase-mask, allowing high-throughput continuous patterning. By using a film-type metal mask, continuous photolithography was achieved, and this method could be used to control the period of resultant patterns in real time by changing the rotating speed of the cylinder mask. As an application, we present the fabrication of a transparent electrode in the form of a metallic mesh by using the developed roll-type photolithography process. As a result, a transparent conductor with good properties was achieved by using a recently built cylindrical phase-shift lithography prototype, which was designed for patterning on 100-mm2 substrates.

Lossless Deformation of Brain Images for Concealing Identification (신원 은닉을 위한 두뇌 영상의 무손실 변경)

  • Lee, Hyo-Jong;Yu, Du Ruo
    • The KIPS Transactions:PartB
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    • v.18B no.6
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    • pp.385-388
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    • 2011
  • Patients' privacy protection is a heated issue in medical business, as medical information in digital format transmit everywhere through networks without any limitation. A current protection method for brain images is to deface from the brain image for patient's privacy. However, the defacing process often removes important brain voxels so that the defaced brain image is damaged for medical analysis. An ad-hoc method is proposed to conceal patient's identification by adding cylindrical mask, while the brain keep all important brain voxels. The proposed lossless deformation of brain image is verified not to loose any important voxels. Futhermore, the masked brain image is proved not to be recognized by others.

A Study on the Combustion Performance by the Improvement of In Cylinder Flow Motion in the Natural Gas Engine (실린더내 흡기유동개선이 천연가스엔진의 연소성능에 미치는 영향 연구)

  • Jeong, D.S.;Suh, S.W.;Oh, S.M.;Uhm, J.H.;Chang, Y.J.
    • Transactions of the Korean Society of Automotive Engineers
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    • v.3 no.3
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    • pp.90-96
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    • 1995
  • In general, natural gas engine converted from gasoline engine has disadvantage of power decrease. In order to increase power output in natural gas engine, the improvement of in-cylinder flow motion has been believed as the most effective method. In this study, the geometry of combustion chamber in 4 valve DOHC natural gas engine is modified, and in-cylinder flow patterns is analyized. Also engine performance is evaluated according to the modification of in-cylinder flow motion.

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블록 공중합체 박막을 이용한 금 나노점 및 실리콘 나노점의 형성

  • Gang, Gil-Beom;Lee, Chang-U;Kim, Yong-Tae;Kim, Seong-Il
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2007.06a
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    • pp.90-93
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    • 2007
  • 밀도가 높고 주기적으로 배열된 실리콘 나노점이 실리콘 기판위에 형성 되었다. 실리콘 나노점을 형성하기 위해 사용된 나노패턴의 지름은 20 나노미터(nm)이고 깊이는 40 nm 이었으며 기공과 기공사이의 거리는 50 nm 였다. 나노미터 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성하였다 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 나노크기의 마스크를 만들었다. 형성된 나노패턴에 전자빔 기상증착장치를 사용하여 금 박막을 $100\;{\AA}$ 증착하고 리프트오프(lift-off) 방식으로 금 나노점을 만들었다. 형성된 금 나노점을 불소기반의 화학반응성 식각법을 이용하여 식각하고 황산으로 제거하였다. 형성된 실리콘 나노점의 지름은 24 nm 였고 높이는 20 nm 였다.

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Fabrication of Tungsten Nano Dot by Using Block Copolymer Thin Film (블록 공중합체 박막을 이용한 텅스텐 나노점의 형성)

  • Kang, Gil-Bum;Kim, Seong-Il;Kim, Yeung-Hwan;Park, Min-Chul;Kim, Yong-Tae;Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.3 s.40
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    • pp.13-17
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    • 2006
  • Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

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Method to control the Sizes of the Nanopatterns Using Block Copolymer (블록 공중합체를 이용한 나노패턴의 크기제어방법)

  • Kang, Gil-Bum;Kim, Seong-Il;Han, Il-Ki
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.366-370
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    • 2007
  • Nano-scopic holes which are distributed densely and uniformly were fabricated on $SiO_2$ surface. Self-assembling resists were used to produce a layer of uniformly distributed parallel poly methyl methacrylate (PMMA) cylinders in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing. Subsequently, PS nanotemplates were fabricated. The patterned holes of PS template were approximately $8{\sim}30\;nm$ wide, 40 nm deep, and 60 nm apart. The porous PS template was used as a dry etching mask to transfer the pattern of PS template into the silicon oxide thin film during reactive ion etching (RIE) process. The sizes of the patterned holes on $SiO_2$ layer were $9{\sim}33\;nm$. After pattern transfer by RIE, uniformly distributed holes of which size were in the range of $6{\sim}22\;nm$ were fabricated on Si substrate. Sizes of the patterned holes were controllable by PMMA molecular weight.

Fabrication of Si Nano Dots by Using Diblock Copolymer Thin Film (블록 공중합체 박막을 이용한 실리콘 나노점의 형성)

  • Kang, Gil-Bum;Kim, Seong-Il;Kim, Young-Hwan;Park, Min-Chul;Kim, Yong-Tae;Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.17-21
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    • 2007
  • Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The nanopatterned holes were approximately $15{\sim}40nm$ wide, 40 nm deep and $40{\sim}80\;nm$ apart. To obtain nano-size patterns, self?assembling diblock copolymer were used to produce layer of hexagonaly ordered parallel cylinders of polymethylmethacrylate (PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS. $100\;{\AA}-thick$ Au thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process. Arrays of Au nano dots were transferred by using Fluorine-based reactive ion etching(RE). Au nano dots were removed by sulfuric acid. Si nano dots size and height were $30{\sim}70\;nm$ and $10{\sim}20\;nm$ respectively.

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