• Electrical & Electronic Materials
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• v.9 no.5
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• pp.518-525
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• 1996

본 고에서는 유리 집적광센서의 제작에 적합한 유리재료들의 종류와 특성을 설명하였으며, 이들 유리의 종류에 맞도록 개발되어진 제작기술 중에서 이온교환(Ion exchange)방법과 silica-on-silicon(SOS)방법을 소개하였다. 그리고 이러한 공정기술을 이용하여 제작되어진 유리 집적광센서 중에서 물체의 거리를 측정하기 위한 마이클슨 간섭계(michelson interferometer)와 물질의 농도를 측정하기 위한 화학센서(chemical sensor)들을 소개하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.18-23
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• 2006

In this paper, we derive a novel eigenvalue equation of double silica layers on silicon only for TE mode and present the method as an example how to use it to determine the refractive indices and thicknesses with prism coupler. Our method to solve eigenvalue equation have good merit rather than [5] in that the equation is real and iteration parameters can be reduced from four to three. The average magnitude of the errors is less than $10^{-5}\~10^{-6}$ approximately

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.188-194
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• 1997

Wet gel with surface modification by TMCS was redispersed in EtOH and redispersed silica sol for coat-ing was prepared. After spin coating of redispersed sol was conducted on silicon substrate, processes of drying(8$0^{\circ}C$) and heat treatment(>25$0^{\circ}C$) were, followed at ambient pressure. The influence of heat treat-ment of properties of film was observed, changing temperature at heat treatment. The optimum redisp-ersion condition for stable silica sol was wet gel:EtOH=1g:110$m\ell$ and the concentration and viscosity of redispersed silica sol with average particle size of 30nm were 0.11 M, 2.0-2.2 cP respectively. Crack-free thin film with the refractive index of 1.14 and thickness of 400 nm was obtained through drying at 8$0^{\circ}C$ and subsequent heat treatment at 45$0^{\circ}C$ for 2 hrs respectively after spin coating of 1500rpm, 10 times.

• Korean Chemical Engineering Research
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• v.51 no.4
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• pp.443-454
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• 2013

Various metal ions (transition and base metals) incorporated MCM-41 catalysts can be synthesized using colloidal and soluble silica with non-sodium involved process. Transition metal ion-typically $V^{5+}$, $Co^{2+}$, and $Ni^{2+}$-incorporated MCM-41 catalysts were synthesized by isomorphous substitution of Si ions in the framework. Each incorporated metal ion created a single species in the silica framework, single-site solid catalyst, showing a substantial stability in reduction and catalytic activity. Radius of pore curvature effect was investigated with Co-MCM-41 by temperature programmed reduction (TPR). The size of metallic Co clusters, sub-nanometer, could be controlled by a proper reduction treatment of Co-MCM-41 having different pore size and the initial pH adjustment of the Co-MCM-41 synthesis solution. These small metallic clusters showed a high stability under a harsh reaction condition without serious migration, resulting from a direct anchoring of small metallic clusters to the partially or unreduced metal ions on the surface. After a complete reduction, partial occlusion of the metallic cluster surface by amorphous silica stabilized the particles against aggregations. As a probe reaction of particle size sensitivity, carbon single wall nanotubes (SWNT) were synthesized using Co-MCM-41. A metallic cluster stability test was performed by CO methanation using Co- and Ni-MCM-41. Methanol and methane partial oxidations were carried out with V-MCM-41, and the radius of pore curvature effect on the catalytic activity was investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.65-72
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• 2012

Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at $520^{\circ}C$ was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.