• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.44.1-44
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.168-170
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• 1994

• Proceedings of the Korean Fiber Society Conference
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• 2002.04a
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• pp.410-413
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• 2002

섬유공업 가운데 염색가공등의 습식공정에 있어서 에너지 절감과 약제의 균일처리에 의한 염색성 및 가공성의 향상을 기하기 위하여 거품을 이용하여 처리하는 방법이 일반화 되어가고 있다. 이에 따라 거품을 이용한 가공에 관한 연구도 활발히 이루어져 왔으며, 종래의 saturation pad 법과 거품 가공법으로 가공 처리했을 때의 에너지 소요량 및 거품을 만들 때 발포제로 사용되는 계면활성제 및 거품안정제와 발생된 거품의 성질(1-2), 거품을 발생시키는 장치(3-4), 발생된 거품을 직물에 처리하는 장치 (5-7) 등에 대해서도 자세히 검토된 바 있다. (중략)

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2003.04a
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• pp.83-86
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• 2003

기존의 습식염색법이 에너지 다소비형일 뿐만 아니라 분산염료를 이용해 PET, Nylon과 같은 합성섬유를 염색할 때 첨가되는 조제(계면활성제, 균염제, 유연제 등)가 난분해성 폐수를 유발시킨다. 이를 방지하기 위한 새로운 초임계염색법이 1991년 독일의 Schollmeyer 교수에 의해 보고된 이후, 한국, 미국, 이태리, 프랑스 등에서도 이에 관한 연구가 활발히 진행되어 현재 많은 연구 성과를 거두고 있다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.366-366
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• 2013

건식 박막증착 공정인 플라즈마 중합법을 이용하여 유기 재료인 Styrene을 절연 박막으로 제작하였다. 플라즈마 중합된 Styrene (ppS) 절연 박막의 정밀한 공정 제어를 위해 bubbler와 circulator를 이용하여 습식 공정과 비교하여도 절연 특성이 뛰어난 pps 절연 박막을 증착하고, 이를 활용하여 gate 전극으로 ITO, insulator layer로 pps, floating gate로 Au, tunneling layer로 ppMMA와 pps, semiconductor로 Pentacene, source/drain 전극으로 Au를 사용한 비휘발성 메모리 소자를 제작하였다. ppMMA와 pps의 서로 다른 tunneling layer의 두께 변화에 따른 비휘발성 메모리 특성 변화를 연구하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.204-204
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• 2009

추가적인 습식 에칭 공정 없이 유도결합 화학 기상 증착법을 이용하여 공정변수 조절만으로 ZnO 박막의 texture와 표면 거칠기를 조절하여 Hzae 특성을 향상시켰다.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.354-361
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• 2012

The organic memory device was made by the plasma polymerization method which was not the dry process but the wet process. The memory device consist of the styrene and MMA monomer as the insulating layer, MMA monomer as the tunneling layer and Au thin film as the memory layer which was fabricated by thermal evaporation method. The I-V characteristics of fabricated memory device got the hysteresis voltage of 27 V at 40/-40 V double sweep measuring conditions. At this time, the optimized structure was 7 nm of Au thin film as floating gate, 400 nm of styrene thin film as insulating layer and 30 nm of MMA thin film as tunneling layer. Therefore we got the charge trapping characteristics by the hysteresis voltage. From the paper, styrene indicated a good charge trapping characteristics better than MMA. In the future, we expect to make devices by using styrene thin film rather than Au thin film.

• Applied Microscopy
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• v.33 no.1
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• pp.17-23
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• 2003

Indium oxide ($In_2O_3$) nanowires were successfully synthesized by a simple reaction in a wet oxidizing environment at low temperature without metal catalyst. The nanowires were characterized by an x-ray diffraction (XRD), a scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS), and a transmission electron microscopy (TEM). It was shown that the $In_2O_3$ nanowires were two types of morphology, uniform nanowires and nanowires containing $In_2O_3$ nanoparticles in its stem. It was found that lengths of the nanowires were ranges of several micrometers and their diameters were around $10{\sim}250$ nm. The growth direction of the nanowires was investigated and their growth mechanism is also discussed.

• Plant Journal
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• v.13 no.2
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• pp.34-38
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• 2017

To reduce global warming, there are so many studies, investments and efforts. The Post Combustion $CO_2$ Capture technology is one of these efforts. But the technologies are having trouble with reducing operating prices. And CCS technology which is using amine solvent uses high price amine solvent. There is solvent losses naturally when operating plant. The solvent loss makes operating and maintenance price higher. In this study, how the washing column of treated flue gas affects the losses of amine solvent and operating was studied.

• Korean Chemical Engineering Research
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• v.61 no.1
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• pp.39-44
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• 2023

In this study, the particle size of Si polycrystals was controlled through wet-sedimentation method, and changes in the capacity and cyclic characteristics of the Si anode material according to the particle size were observed. After wet-sedimentation of Si particles pulverized by a vibration mill, the non-uniform particle distribution of Si was uniformly controlled. The d₅₀ of a sample in which Si was sedimented for 24 hours decreased to 0.50 ㎛. As a result of the electrochemical characteristic analysis, the Rct value representing the resistance in the electrode was significantly reduced due to the decrease in particle size. The unclassified Si sample exhibited a discharge capacity of 2,869 mAh/g in the first cycle, and decreased to 85.7 mAh/g after 100 cycles. The sample in which Si was classified for 24 hours showed a capacity of 3,394 mAh/g initially, and maintained a capacity of 1,726 mAh/g after 100 cycles. As the size of the Si particles decreased, the discharge capacity increased and the cycle life was also increased.