• 한국기계가공학회지
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• 제17권6호
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• pp.91-97
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• 2018

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.

• 한국재료학회지
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• 제15권5호
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• pp.334-339
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• 2005

Nickel Powders were synthesized by the reduction of $Ni(OH)_2$ reactant slurries from nonaqueous media, and the morphological characteristics of nickel powders with the addition of NaOH, the composition of mixed solvents, reaction temperature and reaction time were investigated. The NaOH addition changed the structure of agglomeration in the submicron range. As the volume ratio of TEA to DEA increased, the powders slightly suppressed the agglomeration between particles and their size increased. The reaction temperature on size and shape of nickel powders was significant. As reaction time was shortened from 40 min to 0.3 min at $220^{\circ}C$, size distribution of nickel powders was transferred to a narrow size distribution owing to the presence of smaller particles with below $1.0\;{\mu}m$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.23-23
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• 2011

Chemical-Mechanical Planarization (CMP) 공정이란 화학적 반응 및 기계적인 힘이 복합적으로 작용하여 표면을 평탄화하는 공정이다. 이러한 CMP 공정은 반도체 산업에서 회로의 고집적화와 다층구조를 형성하기 위하여 도입되었으며 반도체 제조를 위한 필수공정으로 그 중요성이 강조되고 있다. 특히 최근에는 Inter-Level Dielectric (ILD)의 형성과 Shallow Trench Isolation (STI) 공정에서실리콘 산화막을 평탄화하기 위한 CMP 공정에 대해 연구가 활발히 이루어지고 있다. 그러나 CMP 공정 후 scratch, pitting corrosion, contamination 등의 Defect가 발생하는 문제점이 존재한다. 이 중에서도 scratch는 기계적, 열적 스트레스에 의해 생성된 패드의 잔해, 슬러리의 잔유물, 응집된 입자 등에 의해 표면에 형성된다. 반도체 공정에서는 다양한 종류의 실리콘 산화막이 사용되고 gks이러한 실리콘 산화막들은 종류에 따라 경도가 다르다. 따라서 실리콘 산화막의 경도에 따른 CMP 공정 및 이로 인한 Scratch 발생에 관한 연구가 필요하다고 할 수 있다. 본 연구에서는 scratch 형성의 거동을 알아보기 위하여 boronphoshposilicate glass (BPSG), plasma enhanced chemical vapor deposition (PECVD) tetraethylorthosilicate (TEOS), high density plasma (HDP) oxide의 3가지 실리콘 산화막의 기계적 성질 및 이에 따른 CMP 공정에 대한 평가를 실시하였다. CMP 공정 후 효율적인 scratch 평가를 위해 브러시를 이용하여 1차 세정을 실시하였으며 습식세정방법(SC-1, DHF)으로 마무리 하였다. Scratch 개수는 Particle counter (Surfscan6200, KLA Tencor, USA)로 측정하였고, 광학현미경을 이용하여 형태를 관찰하였다. Scratch 평가를 위한 CMP 공정은 실험에 사용된 3가지 종류의 실리콘 산화막들의 경도가 서로 다르기 때문에 동등한 실험조건 설정을 위해 동일한 연마량이 관찰되는 조건에서 실시하였다. 실험결과 scratch 종류는 그 형태에 따라 chatter/line/rolling type의 3가지로 분류되었다 BPSG가 다른 종류의 실리콘 산화막에 비해 많은 수에 scratch가 관찰되었으며 line type이 많은 비율을 차지한다는 것을 확인하였다. 또한 CMP 공정에서 압력이 증가함에 따라 chatter type scratch의 길이는 짧아지고 폭이 넓어지는 것을 확인하였다. 본 연구를 통해 실리콘 산화막의 경도에 따른 scratch 형성 원리를 파악하였다.

• 한국산학기술학회논문지
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• 제9권4호
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• pp.892-898
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• 2008

3차원 쾌속 조형법은 컴퓨터에 저장되어있는 객체 데이터를 이용하여 시제품을 제작하는 기술로써, 기존의 나무나 클레이, 혹은 주조 제작방식과는 달리 원하는 위치에 요구되는 재료를 직접 적층함으로써 원형제품을 제작함을 특징으로 한다. 스테레오리쏘그래피, 용융 점착법, 선택적 레이저 소결법, 판상 제작법 등의 다양한 3차원 쾌속 조형법이 개발되었으나, 그 중에서 잉크젯을 통한 3차원 쾌속 조형법은 잉크화된 조형재료를 통해 구조적으로 기능이 가능한 원형제품의 제작이 가능하다는 특징이 있다. 그러나, 기능성 원형제품의 제작을 위해서는 잉크의 고농도화가 요구되며, 이로 인해 잉크 점도가 상승되어 젯팅 신뢰성이 저하되는 문제점이 있었다. 본 논문에서는 3차원 쾌속 조형법을 위한 최적 젯팅조건을 도출하기 위해 슬러리 타입 세라믹 상변화 잉크의 음파 전달속도 측정과 음파 전달속도가 젯팅에 미치는 영향을 고찰하도록 한다.

• 한국재료학회지
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• 제23권6호
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• pp.339-343
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• 2013

Porous Ti-systems with unidirectionally aligned channels were synthesized by freeze-drying and a heat treatment process. $TiH_2$ powder and camphene were used as the source materials of Ti and sublimable vehicles, respectively. Camphene slurries with $TiH_2$ content of 10 and 15 vol% were prepared by milling at $50^{\circ}C$ with a small amount of oligomeric polyester dispersant. Freezing of the slurry was done in a Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$ while unidirectionally controlling the growth direction of the camphene. Pores were generated subsequently by sublimation of the camphene during drying in air for 48 h. The green body was heat-treated at $1100^{\circ}C$ for 1 h in a nitrogen and air atmosphere. XRD analysis revealed that the samples composed of TiN and $TiO_2$ phase were dependent on the heat-treatment atmosphere. The sintered samples showed large pores of about 120 mm which were aligned parallel to the camphene growth direction. The internal wall of the large pores had relatively small pores with a dendritic structure due to the growth of camphene dendrite depending on the degree of nucleation and powder rearrangement in the slurry. These results suggest that a porous body with an appropriate microstructure can be successfully fabricated by freeze-drying and a controlled sintering process of a camphene/$TiH_2$ slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.339-342
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• 2003

The corrosion characteristics of Copper by oxidizers in Cu CMP slurry has been investigated. Key experimental variables that has been investigate are the corrosion rate by different oxidizers containing slurry of Cu CMP. Oxidizers in Cu CMP slurry reacts with Cu surfaces to raise the oxidation state of the metal via a reduction-oxidation reaction, resulting in either dissolution of the Cu or the formation of Ta surface film on the metal.[1] When Cu films were corroded adding each oxidizer, corrosion rate increased as much as higher Icorrosion. The corrosion rate of Cu was the largest as added $(NH_4)_2S_2O_8$. The higher content of Urea Hydrogen peroxide was, the higher corrosion rate was measured. Putting in tartaric acid as complexing agent, the corrosion rates of the compounds(Urea hydrogen peroxide+$H_2O_2$) are uniformly. As a result of Cu corrosion by $Cu(NO_3)_2$, the high corrosion rate was determined by even small amounts of $Cu(NO_3)_2$. Consequently, this can be explained by assuming that corrosion by oxidizers has primary effects on the removal rate of Cu and the proper oxidizer needs to be chosen in accordance with relationship of each slurry agent.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.382-385
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• 2003

Chemical mechanical polishing(CMP) is an essential process in the production of copper-based chips. On this work, the stability of Hydrogen Peroxide($H_2O_2$) as oxidizer of Cu CMP slurry has been investigated. $H_2O_2$ is known as the most common oxidizer in Cu CMP slurry. Copper slowly dissolves in $H_2O_2$ solutions and the interaction of $H_2O_2$ with copper surface had been studied in the literature. Because hydrogen peroxide is a weak acid in aqueous solutions, a passivation-type slurry chemistry could be achieved only with pH buffered solution.[1] Moreover, $H_2O_2$ is so unstable that its stabilization is needed using as oxidizer. As adding KOH as pH buffering agent, stability of $H_2O_2$ decreased. However, stability went up with putting in small amount of BTA as film forming agent. There was no difference of $H_2O_2$ stability between KOH and TMAH at same pH. On the other hand, $H_2O_2$ dispersion of TMAH is lower than that of KOH. Furthermore, adding $H_2O_2$ in slurry in advance of bead milling lead to better stability than adding after bead milling. Generally, various solutions of phosphoric acids result in a higher stability. Using Alumina C as abrasive was good at stabilizing for $H_2O_2$; moreover, better stability was gotten by adding $H_3PO_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.50-53
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• 2003

CMP (chemical mechanical polishing) process remained to solve several problems in deep sub-micron integrated circuit manufacturing process. especially consumables (polishing pad, backing film, slurry, pad conditioner), one of the most important components in the CMP system is the slurry. Among the composition of slurries (buffer solution, bulk solution, abrasive particle, oxidizer, inhibitor, suspension, antifoaming agent, dispersion agent), the abrasive particles are important in determining polish rate and planarization ability of a CMP process. However, the cost of abrasives is still very high. So, in order to reduce the high COO (cost of ownership) and COC (cost of consumables) in this paper, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size and hardness. Also, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• 한국재료학회지
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• 제25권11호
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• pp.602-606
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• 2015

Porous W with spherical and directionally aligned pores was fabricated by the combination of sacrificial fugitives and a freeze-drying process. Camphene slurries with powder mixtures of $WO_3$ and spherical PMMA of 20 vol% were frozen at $-25^{\circ}C$ and dried for the sublimation of the camphene. The green bodies were heat-treated at $400^{\circ}C$ for 2 h to decompose the PMMA; then, sintering was carried out at $1200^{\circ}C$ in a hydrogen atmosphere for 2 h. TGA and XRD analysis showed that the PMMA decomposed at about $400^{\circ}C$, and $WO_3$ was reduced to metallic W at $800^{\circ}C$ without any reaction phases. The sintered bodies with $WO_3$-PMMA contents of 15 and 20 vol% showed large pores with aligned direction and small pores in the internal walls of the large pores. The pore formation was discussed in terms of the solidication behavior of liquid camphene with solid particles. Spherical pores, formed by decomposition of PMMA, were observed in the sintered specimens. Also, microstructural observation revealed that struts between the small pores consisted of very fine particles with size of about 300 nm.

• 한국재료학회지
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• 제28권2호
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• pp.108-112
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• 2018

The present study demonstrates the effect of raw powder on the pore structure of porous W-Ni prepared by freeze drying of camphene-based slurries and sintering process. The reduction behavior of $WO_3$ and $WO_3-NiO$ powders is analyzed by a temperature programmed reduction method in Ar-10% H2 atmosphere. After heat treatment in hydrogen atmosphere, $WO_3-NiO$ powder mixture is completely converted to metallic W without any reaction phases. Camphene slurries with oxide powders are frozen at $-30^{\circ}C$, and pores in the frozen specimens are generated by sublimation of the camphene during drying in air. The green bodies are hydrogen-reduced at $800^{\circ}C$ and sintered at $1000^{\circ}C$ for 1 h. The sintered samples show large and aligned parallel pores to the camphene growth direction, and small pores in the internal wall of large pores. The strut between large pores, prepared from pure $WO_3$ powder, consists of very fine particles with partially necking between the particles. In contrast, the strut densification is clearly observed in the Ni-added W sample due to the enhanced mass transport in activation sintering.