• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.12-14
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP). process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied. aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.304-304
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• 2008

최근 이동통신의 사업의 발달로 인하여 제품의 고속신호 전달에 대한 관심이 부각되고 있다. 이로 인해 고집적 LTCC 모듈로 제작이 가능하고 고속신호 전달이 용이한 저유전율과 낮은 loss특성을 요구하는 소재 개발의 지속적인 연구를 필요로 한다. 지금까지의 ceramic/glass composite에서 주로 사용된 ceramic filler는 $Al_2O_3$로 낮은 유전율을 구현하는데 한계가 있었다. Cordierite는 낮은 유전율(${\varepsilon}r$ < 4)을 나타내는 filler로서 저유전율 기판소재로 사용될 가능성이 높지만 아직까지 보고된 결과들이 미흡한 실정이다. 선행 연구에서 cordierite filler와 $SiO_2-B_2O_3-Al_2O_3$-RO (R Zn, Sr, Ba, Ca)계의 glass를 혼합하여 LTCC 용 기판소재로서의 가능성을 확인한 결과 5.0~5.5 의 낮은 유전율과 1,000~1,500의 Q를 나타내는 것을 확인 하였다. 하지만 sheet로 제작 시 $B_2O_3$ 계로 인해 볼밀 공정에서 슬러리를 응집시켜 점도를 증가(gelation)시키는 현상이 발생하였다. 이를 개선하기 위한 glass 조성의 $B_2O_3$ 함량을 5%줄여 만든 glass를 이용해 미세구조, 유전율과 Q 그리고 강도를 측정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.340-341
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• 2008

본 논문에서는 미세 패턴을 구현하기 위해 폴리머 소재의 조성에 따른 공정의 영향에 대해서 연구를 하였다. 제작된 본딩 필름은 난연계 에폭시수지와 고내열 특성을 위해서 경화제 조화 성분 폴리머를 이용하였다. 또한, CTE 값을 향상하기 위해서 필러로서 SiO2 분말을 이용하였다. 조성물은 혼합하여 슬러리를 만들고, 테입 캐스터를 이용하여 필름을 제작하였다. 제작된 필름은 150 및 160도의 온도에서 가열 가압하여 경화하였다. 제작된 수지는 유전율 3.2의 유전율과 loss tan 6값이 0.015값을 나타내었다. 또한 제작된 본딩 필름의 조화특성 연구를 위해서 경화조건, 스웰링 조건, 디스미어 시간에 따른공정 변화의 영향에 대해 고찰하였으며 제작된 시편의 조도는 SEM으로 관찰하여 조화성분 함량에 따른 최적 조건을 선정하였다.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.759-764
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• 2003

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of roused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity (WIWNU) wore measured as a function of different slurry composition. As an experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt％ contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows , In tile first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saying of high costs of slurry.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• 한국재료학회지
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• 제19권4호
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• pp.207-211
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• 2009

In this study, we attempted to develop a convenient aluminizing process, using Al-Ti mixed slurry as an aluminum source, to control the Al content of the aluminized layer as a result of a one-step process and can be widely adopted for coating complex-shaped components. The aluminizing process was carried out by the heat treatment on disc and rod shaped S45C steel substrates with Al-Ti mixed slurries that were composed of various mixed ratios (wt%) of Al and Ti powders. The surface of the resultant aluminized layer was relatively smooth with no obvious cracks. The aluminized layers mainly contain an Fe-Al compound as the bulk phase. However, the Al concentration and the thickness of the aluminized layer gradually decrease as the Ti proportion among Al-Ti mixed slurries increases. It has also been shown that the Al-Ti compound layer, which formed on the substrate during heat treatment, easily separates from the substrate. In addition, the incorporation of Ti into the substrate surface during heat treatment was not observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.158-161
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• 2003

The primary aim of this study is to investigate new semi-abrasive free slurry including acid colloidal silica and hydrogen peroxide for copper chemical-mechanical planarization (CMP). In general, slurry for copper CMP consists of colloidal silica as an abrasive, organic acid as a complex-forming agent, hydrogen peroxide as an oxidizing agent, a film forming agent, a pH control agent and several additives. We developed new semi-abrasive free slurry (SAFS) including below 0.5% acid colloidal silica. We evaluated additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP process. We also estimated dispersion stability and Zeta potential of the acid colloidal silica with additives. The extent of enhancement in tantalum nitride CMP was verified through anelectrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.37-40
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.41-44
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• 2003

As the device feature size is reduced to the deep sub-micron regime, the chemical mechanical polishing (CMP) technology is widely recognized as the most promising method to achieve the global planarization of the multilevel interconnection for ULSI applications. However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.