• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.724-731
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• 2001

스크린 인쇄법에 의해 Si 기판에 PZT 후막의 제조에 있어서 주요 문제점은 낮은 소결밀도 및 PZT 후막과 Si 기판과의 반응현상이다. 이러한 현상을 억제하기 위해 본 연구에서는 스크린 인쇄법 및 PZT sol-gel 처리법의 혼합된 방법을 채택하여 Pt/TiO$_2$/YSZ/SiO$_2$/Si(100) 기판에 Zr/Ti 비가 52/48인 PZT 후막을 제조하였으며, 소결온도에 따른 잔류분극(P$_{r}$), 유전상수($\varepsilon$$_{r}$) 및 압전상수(d$_{33}$)를 측정하였다. 인쇄된 PZT 후막에 졸 처리함으로써 단순히 인쇄된 후막에 비해 전기적 특성이 증진된 결과를 얻었다.다.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.77-77
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• 2010

본 연구에서는 Sn-3.0Ag-0.5Cu (SAC305) 무연솔더의 최적 인쇄성을 위한 PCB 및 마스크설계, 스크린프린팅 공정변수의 최적값을 실험계획법을 통해 평가하였다. 사용된 칩은 가로 0.4mm 세로 0.2mm의 0402 MLCC칩이며, 사용된 시험보드는 OSP 표면처리된 PCB이었다. 인쇄성을 판단하기 위한 공정인자는 금속마스크 두께, 마스크홀 크기, 패드크기 및 모양, 인쇄각도, 인쇄속도, 판분리속도이었다. ANOVA분석을 통해 주인자를 파악하였으며, 인쇄성에 영향을 미치는 주인자는 마스크두께와 인쇄각도임이 확인되었다. 그 후 중심 합성법을 이용하여 인쇄성 최적 조건을 확인하였다. 결과로 나타난 등고선/표면도를 통해, 마스크두께가 작을 때에는 인쇄각도가 작아야 높은 인쇄성을 갖으며, 또한 마스크 두께가 클 경우에는 인쇄각도가 커야 높은 인쇄성을 가짐을 알 수 있었다. 추가실험을 통해서 인쇄성 표면도의 정확도를 확인하였으며, 실험값은 표면도에서 표시된 인쇄성값과 비슷함을 알 수 있었다. 또한, 인쇄성이 낮은 영역과 높은 영역에서 접합강도값을 측정하였으며, 인쇄성이 좋은 영역에서 접합강도도 높음을 알 수 있었다.

• 한국전기화학회:학술대회논문집
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• 2002.07a
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• pp.29-32
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• 2002

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.15-22
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• 1999

Generally, many equipments and a long lead time ale required to manufacture the build-up multilayer board through various processes such as etching, plating, drilling etc. Wet process is suitable for mass production, however it is not adequate for manufacturing prototype in developing stage. In this study, a silk screen printing technology is introduced to make a prototype build-up multilayer board. As for the material photo/thermal curable resin and conductive paste are used for forming dielectric and conductor. And conductive paste fills vias for interconnecting each layer, and also is used for circuit patterning by silk screen technology. Finally, the basic concept and the possibility of build-up multilayer board prototype is proposed and verified as a powerful approach, compared with the conventional processes.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.593-594
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• 2006

A novel thermal transfer method was developed to form the phosphor screen for VPT(Video Phone Tube). This method have advantages of simple process, clean environment, saving raw material and running-cost comparison of electrodeposition, spin coating of conventional methods. But now applying phosphor screen for thermal transfer method has been formed three layers (phosphor layer, ITO layer and thermal adhesive layer) on the PET film as substrate. This is complex process, run to waste of raw-material and require of high cost. Also ITO paste at present has been imported from Japan. To improve these problems, we have manufactured phosphor screen formed by two layers (phosphor layer and ITO layer). We have developed ITO paste that had both conductive and excellent thermal transfer abilities, made it of domestic raw-material.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.591-592
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• 2006

We studied about the manufacture of the drain-source contacts for OTFTs(organic thin-film transistors) by using screen printing method. The conductive fillers used Ag and carbon black. The conductive contacts with $100{\mu}m$ of channel length were screen printed on a silicon dioxide gate dielectric layer and, the pentacene semiconductor was deposited via vacuum deposition. As a result of studying various conductive pastes, we could obtain the OTFTs which exhibited field-effect behavior over arrange of drain-source and gate voltages, similar to devices employing deposited Au contacts. By using screen-printing with conductive paste, the contacts are processed at low temperature, thereby facilitating their integration with heat sensitive substrates.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.99.2-99.2
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• 2004

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.115.1-115
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• 2003

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.11a
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• pp.27-30
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• 1999

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 1999.11a
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• pp.45-48
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• 1999