• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.315-319
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• 2005

To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.221-225
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• 2005

Formation of a narrow magnetic domain wall is demonstrated by micromagnetics simulations. It is found that the domain wall width can be shrunk in a local exchange coupled system. The local exchange coupled system means that only a part of a ferromagnetic layer has an exchange coupling with another ferromagnetic layer. The system can be considered as two parts in the lateral dimensions: one is an exchange coupled region and another is a free region. Since the two regions have quite different local switching fields, the domain wall will be formed at the interface between the two regions at moderate field ranges.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.28-31
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• 2008

We studied the effect of easy magnetization axis orientation with respect to the strip direction by measuring the magnetoresistance(MR), the magneto-optic Kerr effect(MOKE), and real-time domain evolution. The five strips were patterned on a single chip with the easy axis orientation of each strip relative to the longitudinal direction by around $0^{\circ}$, $18^{\circ}$, $36^{\circ}$, $54^{\circ}$ and $72^{\circ}$, respectively. The overall shape of field dependent MR was mostly governed by the anisotropy magnetoresistnace. The relative change of the longitudinal MR was significantly increased with increasing angle between the easy axis and strip direction, whereas, the transverse MR variation rate was decreased with increasing angle. Several MR steps were observed during the magnetization reversal, and the simultaneous measurement of the MOKE and the domain images identified that the MR steps were associated with evolution of the oppositely directed magnetic domain.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.

• Proceedings of the KIEE Conference
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• 2006.04b
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• pp.402-404
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• 2006

Electro-magnetic launcher(EML)는 전자기력을 이용하여 발사체를 추진시키는 장치이며 그 종류에는 레일건과 코일건이 있다 본 논문에서는 소형, 경량의 발사체를 추진, 가속시키기 위한 솔레노이드형 EML을 설계, 제작하여 시험 발사하고 그 특성을 분석하였다. 개발된 EML은 소형이기 때문에 launcher의 직경이 작아 자기장을 한 지점으로 집중시키는 장치가 필요없고, 전기에너지를 줄이기 위한 별도의 시스템이 필요하지 않으며, 솔레노이드의 형태와 발사체의 위치, 스위칭 시간에 의해 발사체의 추진력과 속도를 조절할 수 있는 장점이 있었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1373-1379
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• 2012

The interaction of magnetic field in the frequency range of 9~150 kHz radiating from a railway system with wireless systems has been the cause of radio frequency interference. In this paper, the equivalent circuit model of the RFI noise is proposed through source and transfer path analysis, and it is confirmed that the switching noise of several kHz that occurs a vehicle traction drive system and a substation is radiated by forming the loop circuit with a feeder line by a rolling stock. And the validity of the proposed equivalent circuit model is verified by analyzing the effects of RC banks installed in the real railway between Guri and Guksu stations, the RFI noise can be effectively mitigated by loading suitable capacitance between rail and feeding line.