• Title/Summary/Keyword: 순방

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A LDPC Decoder for DVB-S2 Standard Supporting Multiple Code Rates (DVB-S2 기반에서 다양한 부호화 율을 지원하는 LCPC 복호기)

  • Ryu, Hye-Jin;Lee, Jong-Yeol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.2
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    • pp.118-124
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    • 2008
  • For forward error correction, DVB-S2, which is the digital video broadcasting forward error coding and modulation standard for satellite television, uses a system based the concatenation of BCH with LDPC inner coding. In DVB-S2 the LDPC codes are defined for 11 different code rates, which means that a DVB-S2 LDPC decoder should support multiple code rates. Seven of the 11 code rates, 3/5, 2/3, 3/4, 4/5, 5/6, 8/9, and 9/10, are regular and the rest four code rates, 1/4, 1/3, 2/5, and 1/2, are irregular. In this paper we propose a flexible decoder for the regular LDPC codes. We combined the partially parallel decoding architecture that has the advantages in the chip size, the memory efficiency, and the processing rate with Benes network to implement a DVB-S2 LDPC decoder that can support multiple code rates with a block size of 64,800 and can configure the interconnection between the variable nodes and the check nodes according to the parity-check matrix. The proposed decoder runs correctly at the frequency of 200MHz enabling 193.2Mbps decoding throughput. The area of the proposed decoder is $16.261m^2$ and the power dissipation is 198mW at a power supply voltage of 1.5V.

The Effect of regularization and identity mapping on the performance of activation functions (정규화 및 항등사상이 활성함수 성능에 미치는 영향)

  • Ryu, Seo-Hyeon;Yoon, Jae-Bok
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.10
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    • pp.75-80
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    • 2017
  • In this paper, we describe the effect of the regularization method and the network with identity mapping on the performance of the activation functions in deep convolutional neural networks. The activation functions act as nonlinear transformation. In early convolutional neural networks, a sigmoid function was used. To overcome the problem of the existing activation functions such as gradient vanishing, various activation functions were developed such as ReLU, Leaky ReLU, parametric ReLU, and ELU. To solve the overfitting problem, regularization methods such as dropout and batch normalization were developed on the sidelines of the activation functions. Additionally, data augmentation is usually applied to deep learning to avoid overfitting. The activation functions mentioned above have different characteristics, but the new regularization method and the network with identity mapping were validated only using ReLU. Therefore, we have experimentally shown the effect of the regularization method and the network with identity mapping on the performance of the activation functions. Through this analysis, we have presented the tendency of the performance of activation functions according to regularization and identity mapping. These results will reduce the number of training trials to find the best activation function.

반극성 (11-22)n형 GaN의 실리콘 도핑농도 증가에 따른 결함감소와 이에 따른 반극성(11-22) GaN계 LED소자의 특성향상에 대한 연구

  • Lee, Jae-Hwan;Han, Sang-Hyeon;Song, Gi-Ryong;Lee, Seong-Nam
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.308.2-308.2
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    • 2014
  • 최근 III-N계 물질 기반의 광 반도체 중 m-면 사파이어 기판을 사용하여 반극성 (11-22) GaN박막을 성장하는 광반도체의 발광효율을 높이려는 연구가 많이 진행되고 있다. 하지만, 반극성 (11-22) GaN와 m-면 사파이어 기판과의 큰 격자상수 차이와 결정학적 이방성의 차이에 의해 많은 결정 결함이 발생하게 된다. 이러한 결정결함들은 반극성 LED소자내에서 누설전류 및 비발광 재결합, 순방향전압 등의 소자특성을 저하시키는 큰 요인이 되기 때문에 고효율 발광소자를 제작함에 있어 어려움을 야기시킨다. 이러한, 반극성 LED 소자의 효율 향상을 위해 결함 분석에 대한 연구를 주를 이루고 있는 상황으로, n-GaN층에 Si도핑에 관한 연구가 진행되고 있다. 이미 극성과 비극성에서는 n-GaN층에 Si이 도핑이 증가될수록 결정질이 향상되고, 양자우물의 계면의 질도 향상 되었다는 보고가 있다. 본 연구에서는 반극성 (11-22) GaN 기반의 발광소자를 제작함에 있어 n-GaN 층의 도핑 농도 변화를 통한 반극성 GaN 박막의 결정성 및 전기적 특성 변화에 따른 LED소자의 전계 발광 특성에 대한 연구를 진행하였다. 금속유기화학증착법을 이용하여 m-면 사파이어 기판에 $2.0{\mu}m$두께의 반극성 (11-22) GaN 박막을 저온 GaN완충층이 존재하지 않는 고온 1단계 성장법을 기반으로 성장하였다.[3] 이후, $2.0{\mu}m$ 반극성 (11-22) GaN 박막 위에 $3.5{\mu}m$ 두께의 n-GaN 층을 성장시켰다. 이때, n-형 도펀트로 SiH4 가스를 4.9, 9.8, 19.6, 39.2 sccm으로 변화하여 성장하였다. 이 4가지 반극성 (11-22) n-GaN 템플릿을 이용하여 동일 구조의 InGaN/GaN 다중양자우물구조와 p-GaN을 성장하여 LED 구조를 제작하였다. X-선 ${\omega}$-rocking curve를 분석한 결과, 이러한 특성은 반극성 (11-22) n-GaN층의 Si 도핑농도 증가에 따라서 각 (0002), (11-20), (10-10) 면에서 결정 결함이 감소하고, 반극성 (11-22) n형 GaN템플릿을 이용하여 성장된 반극성 GaN계 LED소자는 20mA인가 시 도핑 농도 증가에 따라 9.2 V에서 5.8 V로 전압이 감소하였으며 역방향 전류에서도 누설전류가 감소함이 확인되었다. 또한, 전계 발광세기도 증가하였는데, 이는 반극성 n형 GaN박막의 실리콘 도핑농도 증가에 따라 하부 GaN층의 결정성이 향상과 더불어 광학적 특성이 향상되고, n형 GaN층의 전자 농도 및 이동도의 동시 증가에 따라 전기적 특성이 향상 됨에 따라 LED소자의 전계 발광 특성이 향상된 것으로 판단된다.

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UE Measurement Based Compressed Mode in WCDMA (WCDMA 시스템에서 단말 측정에 의한 압축 모드 방법)

  • 김선명;장원학;조영종;임재성
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.7A
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    • pp.814-827
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    • 2004
  • The compressed mode is used to perform inter-frequency and inter-system handover in WCDMA. The instantaneous transmit power is increased in the compressed frame in order to keep the QoS(Quality of Service) unaffected by the reduced processing gain. Furthermore, since the inner loop power control is not active during the transmission gap and the effect of interleaving is decreased, a higher Eb/No target is required, which directly affects the system performance. Due to the impact on performance, the compressed mode should be activated by the RNC(Radio Network Controller) only when there is real need to execute an inter-frequency or inter-system handover. However, 3GPP does not define the method that decides the compressed mode activation. In order to reduce performance degradation, there is need the decision method. In this paper, we consider a combined cell structure in which some neighbor cells have a frequency the same as serving cell and the others have a different frequency or system. Under consideration, we analyze the effect of the compressed mode on the WCDMA forward link performance. In order to avoid performance degradation, we propose an UE(User Equipment) measurement method that can restrict the activation area of the compressed mode of UE that does not need it and evaluate its performance by simulations. Analytical results show that the use of the compressed mode affects the performance degradation. And simulation results show that proposed method leads to better performance.

An Analytical Study on Generation of Pore-Water Pressures Induced by Flow and Waves in Seabed, and Resulting Liquefaction (흐름과 파에 의한 해저지반내 간극수압의 발생과 액상화에 관한 해석적인 연구)

  • Lee, Kwang-Ho;Kim, Dong-Wook;Kim, Do-Sam;Bae, Ki-Seong;Jeon, Jong-Hyeok
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.27 no.5
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    • pp.324-338
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    • 2015
  • Analytical solutions for interaction between seabed and waves such as progressive wave or partial standing wave with arbitrary reflection ratio or standing wave have been developed by many researchers including Lee et al.(2014; 2015a; 2015b; 2015c; 2015d) and Yamamoto et al.(1978). They handled the pore-water pressure as oscillating pore-water pressure and residual pore-water pressure separately and discussed the seabed response on each pore-water pressure. However, based on field observations and laboratory experiments, the oscillating and residual pore-water pressures in the seabed do occur not separately but together at the same time. Therefore, the pore-water pressure should be investigated from a total pore-water pressure point of view. Thus, in this paper, the wave-induced seabed response including liquefaction depth was discussed among oscillating, residual, and total pore-water pressures' point of view according to the variation of wave, seabed, and flow conditions. From the results, in the field of flow with the same direction of progressive wave, the following seabed response has been identified; with increase of flow velocity, the dimensionless oscillating pore-water pressure increases, but the dimensionless residual pore-water pressure decreases, and consequently the dimensionless total pore-water pressure and the dimensionless liquefaction depth decrease.

An Assessment of Areal Evaportranspiration Using Landsat TM Data (Landsat TM 자료를 이용한 광역 증발산량 추정)

  • Chae, Hyo-Seok;Song, Yeong-Su;Park, Jae-Yeong
    • Journal of Korea Water Resources Association
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    • v.33 no.4
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    • pp.471-482
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    • 2000
  • Surface energy balance components were evaluated by Landsat TM data and GIS with meteorological data. Calibration and validation for the applicability of this methodology were made through the estimating of the large-scale evapotranspiration (ET). In addition, sensitivity and error analysis was conducted to see the effects of the surface energy balance components on ET and the accuracy of each components. Bochong-chon located on the upper part of Guem River basin was selected as the case study area. Spatial distribution map of ET were produced for five dates: Jan. 1, Apr. 3, May. 10, and Nov. 27, 1995. The study results showed tat ET was greatly varied with the aspect and theland use type on the surface. In the case of having northeast and southeast in the aspect, ET was linearly increased depending on growing net radiation. While surface temperature has a high value, NDVI(Normalized Difference Vegetation Index) has a low value in the vegetated area. Therefore, ground heat flux was increased but ET was relatively decreased. The results of sensitivity and error analysis showed that net radiation is most sensitive and effective, ranging from 12.5% to 23.6% of sensitivity. Furthermore, the surface temperature, air temperature, and wind speed have the significant effects on ET estimation using remotely sensed data.

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이중구조 투명전극을 이용한 실리콘 박막 태양전지 효율향상 기법

  • Kim, Hyeon-Yeop;Kim, Min-Geon;Choe, Jae-U;Lee, Jun-Sin;Kim, Jun-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.591-591
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    • 2012
  • 본 연구는 Transparent conducting oxide (TCO, 산화물투명전극)를 이용한 박막태양전지 효율향상에 관한 것으로, 이중의 TCO층(Double-stacked TCO layer)의 효과적인 광학 및 전기적 설계에 관한 것이다. 기존 박막 태양전지에서는 투명전극 TCO layer로서, ITO (Indium-Tin-Oxide), FTO (Fluorine- Tin-Oxide), 및 AZO(Aluminum-doped Zinc Oxide) 등을 사용해 왔다. 각 TCO layer마다 장점이 있지만 단점 또한 존재한다. ITO의 경우 높은 전기적 특성을 가지는 반면 수소 플라즈마에 취약하고 기계적 강도에 취약해 ITO 단일층만으로 박막 태양전지에 적용하는 것에 제한을 받는다. 한편, AZO의 경우 전기적 특성도 우수할 뿐만 아니라 수소 플라즈마에도 내구성이 강한 장점이 있지만, 일함수가 p형 반도체보다 낮아 Schottky junction이 되어, 높은 전위장벽이 형성된다. 이는 정공의 이동을 방해하고, 정공의 축적이 일어나서 순방향 전압을 인가할 때 많은 전류의 감소를 가져온다. 또한, AZO와 p형 반도체 사이의 높은 직렬저항으로 인해 광전압(Voc, Open circuit voltage)와 충실률 (FF, Fill factor)가 떨어진다는 단점이 있다. 본 실험에서는 ITO/AZO 2중구조의 TCO층을 적용하여 상기의 문제점을 해결하고자 한다. 이중 구조 TCO층은 Magnetron sputter system을 이용하여, 단계적으로 증착되었다. 빛이 입사하는 유리에 ITO를 제1전도층으로 증착하였는데, ITO는 입사광의 투과도와 전기전도성이 우수하다. 제2전도층으로는 AZO층을 이용하였으며, 실리콘 반도체층과 접하게 된다. AZO는 실리콘 증착시 발생하는 수소 플라즈마에 안정적이고, 물리적 강도 또한 우수한 장점이 있다. 이중 구조층위에 실리콘 광흡수층(Si absorber)을 증착하였으며, pin 구조를 가진다. 기존, 단일막 TCO층과 2중구조 TCO층을 이용하여, 실리콘 박막 태양전지를 구성하였다. 이때, ITO/AZO의 2중구조를 적용하였을 때 태양 전지 특성이 크게 향상된 결과를 얻을 수가 있었다. 특히, 전류밀도의 경우 ITO, FTO, AZO 각각 14.5 mA/cm2, 11.2 mA/cm2, 8.18 mA/cm2를 나타낸 반면 ITO/AZO 2중구조의 경우 약 17mA/cm2 로 크게 향상 되었고, 태양전지 변환 효율도 각각 7.5%, 6.9%, 4%에서 ITO/AZO 2중 구조의 경우 8.05%로 크게 향상되었다. 본 발표에서는 2중구조 TCO를 이용한 현공정에 적용 가능한 박막태양전지 효율향상 기법에 대해 논의하고자 한다.

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Numerical Analysis on Wave Characteristics around Submerged Breakwater in Wave and Current Coexisting Field by OLAFOAM (파-흐름 공존장내 잠제 주변에서 OLAFOAM에 의한 파랑특성의 수치해석)

  • Lee, Kwang-Ho;Bae, Ju-Hyun;An, Sung-Wook;Kim, Do-Sam;Bae, Kee Seung
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.28 no.6
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    • pp.332-349
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    • 2016
  • OLAFOAM is the powerful CFD code and is an expanded version of $OpenFOAM^{(R)}$, for wave mechanics simulation. The $OpenFOAM^{(R)}$ does provide many solvers to correspond to each object of the numerical calculation in a variety of fields. OLAFOAM's governing equation bases on VARANS (Volume-Averaged Reynolds-Averaged Navier-Stokes) equation, and the finite volume method is applied to numerical techniques. The program is coded in C++ and run on the Linux operating system. First of all, in this study, OLAFOAM was validated for 1) wave transformation inside porous structure under bore and regular wave conditions, 2) wave transformation by submerged breakwater under regular wave condition, and 3) regular wave transformation and resultant vertical velocity distribution under current by comparison with existing laboratory measurements. Hereafter, this study, which is almost no examination carried out until now, analyzed closely variation characteristics of water surface level, wave height, frequency spectrum, breaking waves, averaged velocity and turbulent kinetic energy around porous submerged breakwater in the wave and current coexisting field for the case of permeable or impermeable rear beach. It was revealed that the wave height fluctuation according to current direction(following or opposing) was closely related to the turbulent kinetic energy, and others.

An Implementation of Temperature Independent Bias Scheme in Voltage Detector (온도에 무관한 전압검출기의 바이어스 구현)

  • Moon, Jong-Kyu;Kim, Duk-Gyoo
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.6
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    • pp.34-42
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    • 2002
  • In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

Performance Analysis of Multicarrier CDMA System with M-ar Orthogonal Signaling in Multipath Fading Channel (다중 경로 페이딩 채널에서 M 진 직교 신호화를 적용한 다중 반송파 CDMA 시스템의 성능 분석)

  • Park, Kyoung-Suk;Kim, Hang-Rae;Kim, Nam;Park, Sung-Kyun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.391-400
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    • 2001
  • In this paper, the performance of a multicarrier CDMA system applying M-ary orthogonal signaling and adaptive subchannel allocation scheme is analyzed for forward links in Rayleigh fading channel. Also, the effect of error caused by subchannel allocation is analyzed. In the proposed system, each DS waveform is transmitted over the subchannel having the biggest fading among L subchannels. Considering M-ary orthogonal signaling and 4 subchannels, the BER of $10^{-3}$ is satisfied if SNRs are 7.33 dB, 5.33 dB, and 4.47 dB for k = 1, 2, and 3, respectively. Therefore, SNR is decreased as k is increased. If the error of subchannels exists, the BER of $10^{-3}$ is met if SNR is 8.18 dB in the absence of M-ary orthogonal signaling. So, a required SNR is declined about 0.85 dB. Adding the M-ary orthogonal signaling with k = 4, it is observed that the multicarrier CDMA system has performance improvement because a required SNR is 5.44 dB.

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