• Korean Journal of Optics and Photonics
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• v.7 no.2
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• pp.150-156
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• 1996

RWG MQW-LD has been made with our vertical LPE system from the optimal design condition for the RWG MQW-LD to be activated as weakly index-guided LD. Through several experiments we have established the growth condition which can be used through to grow the MQW-DH wafer and to control the thickness of MQW layer to ~200$\AA$. 4 ${\mu}{\textrm}{m}$-thickness of the ridge pattern has been formed through the photolithographic process on the MQW-DH wafer grown by the former condition, and then we have fabricated the RWG MQW-LD using it. From the result of measuring the electro-optical characteristics we can make sure that it can be lasing as lasing as laterally single mode at even more than $2.7I_{th}$.

• Korean Journal of Optics and Photonics
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• v.9 no.2
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• pp.63-69
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• 1998

For detailed characterization of scattering losses occurring in VCSEL's distributed Bragg reflectors, we performed scattering experiment and obtained the information about surface roughness through the analysis of a modified transmission matrix method. The various wafers grown for VCSELs were used for the scattering experiment. The fractal surface assumption and extrapolation is used to estimate the scattered intensity near specular angle. The modified transmission matrix method employed in the analysis considers the scattering loss at each interface and calculates the reflectivity efficiently and easily. As a result, the surface roughness ranges from $4{\AA}$ to $10{\AA}$ The reduction of reflectivity due to the scattering amounts to 0.26% in case of $10{\AA}$ roughness.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.22-28
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• 1992

Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{\circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${\alpha}-Fe_{2}O_{3}$ and ${\gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{\circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230\;{\AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.793-796
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• 2005

In this paper, we propose a method which can improve uniformity of a miniaturized electron beam array for inspection of very small pattern with high speed using vertical interconnection. This method enables the individual control of columns so that it can reduce the deviation of beam current, beam size, scan range and so on. The test device that used vertical interconnection method was fabricated by multiple wafer bonding and metal reflow. Two silicon and one glass wafers were bonded and metal interconnection by melting of electroplated AuSn was performed. The contact resistance was under $10{\Omega}$.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1517-1518
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• 2011

수열합성법을 이용하여 ZnO 나노선을 합성 하였다. 리사이클 공정을 통해 얻은 양질의 길고 수직한 나노선은 기판과 분리공정을 통해 분리된 후 유전체 층이 올라간 실리콘 웨이퍼 위에 스프레이 공정을 통해 고르게 분사 되었고 열처리 공정을 통해 면 발열 소자로서 제작 되었다. 소자 양단 전극에 전계를 인가한 후 열화상카메라를 통해 발열상태를 확인 하였다.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1905-1907
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• 2001

본 논문에서는 다공질 실리콘에 대한 에탄올과 메탄을 가스 감지 특성을 측정하고 전기 전도도의 변화를 고찰하였다. 우선 HF와 에탄올의 혼합 용액내에서 n-type의 웨이퍼에 일정 전압을 인가하여 다공질 실리콘을 형성한다. 다공질 실리콘은 수직한 방향으로 $55{\sim}60{\mu}m$ 두께로 균일하게 형성되었다. 다공질 실리콘을 이용하여 소자를 제작하고 에탄올과 메탄올 가스를 주입하여 전류-전압 특성을 측정하였다. 기존의 다공질 실리콘 에탄올 센서와는 달리 turn-on 시 센서에 흐르는 전류가 빠른 시간내에 일정한 값으로 도달하였고 turn-off시에도 같은 결과를 보였다. 다공질 실리콘 표면에 흡착된 에탄올과 메탄올 가스는 전류의 흐름을 방해하는 surface charge를 스크린하여 전기 전도도를 증가시킨다. 또한 흡착된 가스가 dangling bonds를 passivation하여 전류를 증가시키는 것으로 생각된다.

• Tribology and Lubricants
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• v.28 no.6
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• pp.272-277
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• 2012

Finite element analysis was carried out using wafer-scale and particle-scale models to understand the mechanism of the fast removal rate(edge effect) at wafer edges in the chemical-mechanical polishing process. This is the first to report that a particle-scale model can explain the edge effect well in terms of stress distribution and magnitude. The results also revealed that the mechanism could not be fully understood by using the wafer-scale model, which has been used in many previous studies. The wafer-scale model neither gives the stress magnitude that is sufficient to remove material nor indicates the coincidence between the stress distribution and the removal rate along a wafer surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.180-180
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• 2011

본 연구에서는 MEMS 공정 기술 및 니켈 전해도금 공정을 이용한 프로브 카드를 제작 및 연구 했으며 MEMS기술을 사용함에 따라 다양한 형상의 프로브 카드를 구현하였다. 본 연구를 진행하면서 Photolithography공정 중 스핀코팅, 노광의 세기 및 도금시간의 변화를 각각 다르게 했을 때 도금용 Thick PR Mold 높이에 큰 영향이 있는 것을 알 수 있었다. 실리콘 웨이퍼를 대신하여 Pi필름 상에 Thick PR를 이용하여 Mold를 형성하고, 그 위에 니켈 도금법에 의해 니켈 박막을 형성한 후, Lapping에 의해 두께 평탄도를 조정한다면 일정한 두께편차, 직각에 가까운 수직도 및 항상 일정한 치수 정밀도를 갖는 저단가 니켈 소재의 프로브 카드를 제작 할 수 있을 것이며, 높은 효율을 기대 할 수 있다.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.252-257
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• 1992

In this study, InGaAsP/InP MQW-DH wafer was grown by a vertical type LPE system and 10$\mu$m stripe MQW-LD was fabricated with the wafer. The threshold current was about 200 mA and when the cavity length of the LD was 470$\mu$m the central wavelenth of gain spectra was 1.32$\mu$m the lasing wavelength was 1.302$\mu$m which corresponded to the gain center of the quantum well thickness of 300 $\AA$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.181-188
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• 2006

Rutile single crystals grown by skull melting method were cut parallel and perpendicular to growth axis, and both sides of the cut wafers (${\phi}5.5mmx1.0mm$) were then polished to be mirror surfaces. The black wafers were changed into pale yellow color by annealing in air at 1200 and $1300^{\circ}C$ for $3{\sim}15\;and\;10{\sim}50$ hours, respectively. After annealing, structural and optical properties were examined by specific gravity (S.G), SEM-electron backscattered pattern (SEM-EBSP), X-ray diffraction (XRD), FT-IR transmittance spectra, laser Raman spectroscopy (LRS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These results are analyzed increase of weight in air, decrease of weight in water and specific gravity, shown secondary phase of needle shape, diffusion of oxygen ion and increase of $Ti^{3+}$. From the above results, we suggest that the skull melting method grown rutile single crystals contain defect centers such as $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitials and $F^+-H^+$.