• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.351-359
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• 1996

We have investigated the effect of hydrogen plasma on the formation of InAs QDs (quantum dots) structure by using a CBE (chemical beam epitaxy)system equipped with ECR (electron cyclotron resonance) plasma source. It is confirmed that the formation of self-organized InAs-QDs on GaAs is started after the growth of InAs layer up to 2.6 ML (monolayer) with the irradiation of hydrogen plasma while it is started after 1.9 ML without hydrogen gas and hydrogen plasma through the observation of RHEED patterns. Density and size of the QDs formed at $T_{sub}=370^{\circ}C$ are $1.9{\times}10^{11}cm^{-2}$ and 17.7 nm without hydrogen plasma, and $1.3{\times}10^{11}cm^{-2}$ and 19.4 nm with hydrogen plasma, respectively. It is also observed from the PL(photoluminescence) measurement on InAs-QDs that red shift in PL peak energy and broadening in FWHM (full width at half maximum)of PL peak caused by the effects of hydrogen plasma on the increment of size and its distribution. These effects of hydrogen plasma are considered as a act of atomic hydrogen which enhances the layer-growth of InAs on GaAs resulted from the relief of misfit strain between GaAs substrate and InAs.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.802-805
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• 2009

생활폐기물을 플라즈마 가스화하고 얻어지는 합성가스로부터 수소를 생산하는 파일럿플랜트 건설 계획을 소개한다. 이 파일럿플랜트는 현재 가동 중인 청송군의 10톤/일급 플라즈마 가스화 시설을 고농도 합성가스를 생산하는 시설로 변경하고 수소전환반응기와 수소 PSA 장치를 부착하여 99.999% 순도의 수소 $200Nm^3/h$을 생산하여 연료전지 발전하는 것으로 계획되어 있다. 이 파일럿플랜트는 $20Nm^3/h$ 급의 폐기물 플라즈마 가스화 - 고순도 수소 생산 기술개발 완료에 이은 상용화 실증 시설이다.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.404-411
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• 2023

For the direct reforming of biogas, a three-phase gliding arc plasma reformer was designed to expand the plasma discharge region, and the operation conditions of the plasma reformer, such as the S/C ratio, the gas flow rate, and the plasma input power, were optimized. The H₂ production efficiency is increased at a lower specific plasma input energy density, but byproducts such as C_XH_Y and carbon soot are generated along with the increase in H₂ production efficiency. The formation of byproducts is decreased at higher specific plasma input energy densities and S/C ratios. The optimized operation conditions are 5.5 ~ 6.0 kJ/L for the specific plasma input energy density and 3 for the S/C ratio, considering the conversion efficiency, H₂ production, and byproduct formation. It is expected that the H₂ production efficiency will improve with the decrease in fuel consumption in biogas burners because the heat generated from plasma discharge heats up the feed gas to over 500 ℃.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.267-274
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• 2001

Removal of Cr, Ni and Cu impurities on Si surfaces using remote plasma-excited hydrogen was investigated. Si surfaces were contaminated intentionally by acetone with low purity. To determine the optimum process condition, remote plasma-excited hydrogen cleaning was conducted for various rf-powers and plasma exposure times. After remote plasma-excited hydrogen cleaning, Si surfaces were analyzed by Total X-ray Reflection Fluorescence(TXRF), Surface Photovoltage(SPV) and Atomic Forece Microscope(AFM). The concentrations of Cr, Ni and Cu impurities were reduced and the minority carrier lifetime increased after remote plasma-excited hydrogen. Also RMS roughness decreased by more than 30% after remote plasma-excited hydrogen cleaning. AFM analysis results also show that remote plasma-excited hydrogen cleaning causes no damage to the Si surface. TXRF analysis results show that remote plasma-excited hydrogen cleaning is effective in eliminating metallic impurities from Si surface only if it is performed under an optimum process conditions. The removal mechanism of the Cr, Ni and Cu impurities using remote plasma-excited hydrogen treatments is proposed to be the lift-off during removal of underlying chemical oxides.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.223-230
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• 2006

We have investigated the characteristics of hydrogen (H) plasma treated quantum dot infrared photodetectors (QDIPs). The structure used in this study consists of 3 stacked, self assembled $In_{0.5}Ga_{0.5}As/GaAs$ QD layer separated by GaAs barrier layers that were grown by molecular beam epitaxy. Optical characteristics of QDIPs, such as photoluminescence (PL) spectra and photocurrent spectra, have been studied and compared with each other for the as grown and H plasma treated QDIPs. H plasma treatment, resulted in the splitting of PL peak, which can be attributed to the redistribution of the size of QDs. The activation energies estimated from the temperature dependence of integrated PL intensity for as grown and H plasma treated QDIPs are found to be in good agreement with those determined from corresponding peaks of photocurrent spectra. It is also noted that photocurrent is detected up to 130 K for the H plasma treated QDIP, suggesting the future possibility for the development of infrared photodetectors with high temperature operation.

• Journal of Hydrogen and New Energy
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• v.22 no.2
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• pp.206-212
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• 2011

The effect of process parameters on $H_2$ production from water vapor excited by HF ICP has been qualitatively examined for the first time. With the increase of ICP power, characteristics of $H_2$ production from $H_2O$ dissociation in plasma was divided into 3 regions according to both reaction mechanism and energy efficiency. At the edge of region (II) in the range of middle ICP power, energy effective hydrogen production from $H_2O$ plasma can be achieved. Furthermore, within the region (II) power condition, heating of substrate up to $500^{\circ}C$ shows additional increase of 70~80% in $H_2$ production compared to $H_2O$ plasma without substrate heating. This study have shown that combination of optimal plasma power (region II) and wall heating (around $500^{\circ}C$) is one of effective ways for $H_2$ production from $H_2O$.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2918-2922
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• 2007

This is a report of a feasibility study on the reduction of harmful substances such as particulate matters and nitric oxides emitted from diesel engines by using a plasma reforming system that can generate hydrogen-rich gas. In this paper, an exhaust reduction mechanism of the non-thermal plasma reaction was investigated to perform its efficiency and characteristics on producing hydrogen-rich gas. Firstly, we explain briefly the chemistry of hydrocarbon reforming. The experimental system is showed in the second part. Finally, we demonstrate the feasibility of producing hydrogen using non-thermal plasma. The experimental results are focused on the influence of the different operating parameters (air ratio, inlet flow rates, voltage) on the reformer efficiency and the composition of the produced gas.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.1
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• pp.15-20
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• 1999

Visible light spectrum emitted from $H_2$ plasma in the parallel plate reactor using a commercial electric power are investigated by optical emission spectroscopy. Intensity of visible light is measured as a function of $H_2$ pressure and discharging power, and the intensity is compared with plasma density measured with the probe. As a result, the intensity is affected by plasma density and the plasma density is controlled the $H_2$ pressure and the discharging power.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.817-824
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• 1996

Removal of Cu impurities on Si substrates using remote H-plasma was investigated. Si substrates were intentionally contaminated by 1ppm ${CuCI}_{2}$, standard chemical solution. To determine the optimal process condition, remote H-plasma cleaning was conducted varying the parameters of rf power, cleaning time and remoteness(the distance between the center of plasma and the surface of Si substrate). After remote H-plasma cleaning was conducted, Si surfaces were analysed by TXRF(total x-ray reflection fluorescence) and AFM(atomic force microscope). The concentration of Cu impurity was reduced by more than a factor of 10 and its RMS roughness was improved by more than 30% after remote H-plasma cleaning. TXRF analysis results show that remote H-plasma cleaning is effective in eliminating Cu impurity on Si surface when it is performed under the optimal process condition. AFM analysis results also verifies that remote H-plasma cleaning makes no damage to the Si surface. The deposition mechanism of Cu impurity may be explained by the redox potential(oxidation-reduction reaction potential) theory. Based on the XPS analysis results we could draw a conclusion that Cu impurities on the Si substrate are removed together with the oxide by a "lift-off" mechanism when the chemical oxide( which forms when Cu ions are adsorbed on the Si surface) is etched off by reactive hydrogen atoms.gen atoms.

• Transactions of the KSME C: Technology and Education
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• v.3 no.4
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• pp.291-297
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• 2015

As promising future energy source, hydrogen has been drawing much attention; however, it is easily leaked from the small gap in any storage container due to its find molecule size. In this study, Laser induced breakdown spectroscopy(LIBS) was used for hydrogen leak detection, and feasibility of the scheme was evaluated based on different way for plasma generation. Laser power of 295 mW was required for generating plasma on metal surface to measure hydrogen atomic emission while approximately 2.5 times higher laser power was needed for plasma formation directly in the hydrogen gas stream. It was shown that peak to base ratio increased linearly with increasing the concentration of hydrogen. It can be concluded that LIBS is a viable technique for hydrogen sensing when the concentration of hydrogen is less than 5%.