• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.349-349
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• 2009

High quality ZnO:Al films were prepared on glass substrates by in-line RF magnetron sputtering and their surface morphologies were modified by wet-etching process in dilute acid solution to improve optical properties for application to silicon thin film solar cells as front electrode. The as-deposited films show a strong preferred orientation in [001] direction under our experimental conditions. A low resistivity below $5{\times}10^{-4}{\Omega}{\cdot}cm$ and high optical transmittance above 80% in a visible range are achieved in the films deposited at optimized conditions. After wet-etching, the surface morphologies of the films are changed dramatically depending on the deposition conditions, especially working pressure. The optical properties such as total/diffuse transmittance, haze and angular resolved distribution of light are varied significantly with the surface morphology feature, whereas the electrical properties are seldom changed. The cell performances of silicon thin film solar cells fabricated on the textured films are also evaluated in detail with comparison of commercial $SnO_2$:F films.

• New & Renewable Energy
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• v.2 no.4 s.8
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• pp.86-92
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• 2006

This paper analyses the economics of 50kW PV system installed in Tibet and using domestic technology. We show that this system can be expanded to very large-scale photovoltaic power generation [VLS-PV] system successfully. Based on this result, we conduct the economic analysis of 100MW VLS-PV system designed assuming that it will be installed from 2008 to 2017 in Tibet. In this analysis, future price of PV module and system are estimated based on the methodology of experience curve. In 50kW PV system, the generation cost is calculated at 567.2 won/kWh and this is lower than the one of domestic PV system. In future 100MW VLS-PV system. the generation cost is calculated at 305.4 won/kWh by declining system price. If the lifetime and efficiency of the system goes up, due to future technological improvements, the generation cost can be lowered. Moreover, under the environmental and political effect, VLS-PV system can be as competitive as the conventional energy within 20 years.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.19-24
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• 2006

ZnO:Al(AZO) films prepared by rf magnetron sputtering on glass substrate and textured by post-deposition chemical etching were applied as front contact and back reflectors for ${\mu}c$-Si:H thin film solar cells. For the front transparent electrode contact, AZO films were prepared at various working pressures and substrate temperature and then were chemically etched in diluted HCl(1%). The front AZO films deposited at low working pressure(1 mTorr) and low temperature ($240^{\circ}C$) exhibited uniform and high transmittance ($\geq$80%) and excellent electrical properties. The solar cells were optimized in terms of optical and electrical properties to demonstrate a high short-circuit current.

• YAKHAK HOEJI
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• v.53 no.3
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• pp.145-150
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• 2009

We evaluated cytotoxic effect based on the MTT assay and identified altered proteins in 5-FU(fluorouracil) treated HT29 cells using two-dimensional gel electrophoresis and MALDI-TOF/TOF-MS. As proteins inducing apoptosis, siah binding protein 1 and p47 protein isoform a were up-regulated and tumor protein translationally-controlled 1 was down-regulated by 5-FU treatment. And mannose 6 phosphate receptor binding protein 1 controls DNA mismatch repair system was increased. We suggest 5-FU promotes a cytotoxicity under the action of these proteins in colon cancer cells.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1301-1304
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method. The effect of the Al doping with varying Al/Zn mole ratio and the post-deposition heat treatment on the electrical resistivity and optical transmittance of the prepared films have been investigated. From the experimental results, the ZnO:Al thin films with resistivity as low as $3{\times}10^{-3}{\Omega}cm$ and transmittance as high as 80% can be obtained by Al doping. Also We have found the annealing of the as-deposited ZnO film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation. However, the annealing effect of ZnO:Al thin films is smaller than ZnO films with respect to reduction in resistivity.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.358-364
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• 1996

Recently, much power demand from domestic power consumer is weakening the allowable power reserve margin in summer, especially at midday for one day due to a steep increase of air cooling loads such as air conditioner. Therefore solar airconditioning system can'be considered as one of the best remedies to meet the increase of peak power. Generally in solar air conditioning system, the diode rectifier is used to build up DC link voltage from AC source. The diode rectifier is simple and cheap but it brings out the problems of low power factor and plentiful harmonics at the AC source. Also It can derate the utilization rate of solar energy because the reverse of power flow cannot be made. Hence, in this paper to overcome the peak power problem in summer and to endure good AC input characteristics, solar air conditioning system using the PWM converter is proposed. As results, obtained are the characteristics of the PWM converter such as low distorted current waveform, high power factor and bidirectional power control. And also the stability of proposed system is verified by examining the dynamics of step load change and power reversal testing. (author). refs., figs., tabs.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1763-1765
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• 2000

This paper presents deposition and characterizations of microcrystalline silicon ($\mu$ c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature at 300$^{\circ}C$. The flow rates of $SiH_4$ gas are critical parameter for the formation of Si films with microcrystalline phase. We could obtain $\mu$ c-Si:H with columnar grain structure and volume fraction of 75% without H2 dilution. The electronic properties, hydrogen bonding configurations, and $H_2$ concentration inside the films are also strongly affected by $SiH_4$ flow rate, which is provided in this paper.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1625-1627
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• 2000

Cu(InGa)$Se_2$(CIGS) thin film absorbers with various Cu/(In+Ga) atomic ratios were prepared by a three-stage process using a co-evaporation appartus. The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor lesion due to diffusion of Na from soda-lime glass but was mainly determined by the surface resistivity controlled by excess Na.