• Korean Journal of Soil Science and Fertilizer
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• v.27 no.3
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• pp.232-237
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• 1994

Field microplot(D 20cm, 1 85cm) experiment filled with Bonryang sandy loam soil(Typic Udifluvents) was conducted to obtain quantitative information on the movement of applied nitrogen under different soil moisture regimes and ladino clover cultivation. Urea applied to the soil was quickly transformed into $NH_4$-N which was slowly to $NO_3$-N which governed the downward movement of inorganic N applied in the soil. Downward movement of inorganic nitrogen was relatively slow in the early growing stages of ladino clover when $NH_4$-N form was the major inorganic nitrogen in the soil. In the later growing stages when $NO_3$-N was the major form, inorganic nitrogen moved rapidly with soil water. Favorable soil moisture condition increased downward movement and plant uptake of inorganic nitrogen. In the non irrigated bare soil 92% of applied nitrogen was leached downwards out of the microplots at the final harvest. Under the non-irrigated condition 57% of applied nitrogen was taken up by plants and 37% of nitrogen remained in the soil 5.5 months after sowing. Nitrogen uptake by plants in the microplots irrigated at 0.2 bar was 4.03g/microplot at the final harvest, which was more than the amount of nitrogen applied.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.161-165
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• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.

• Korean Journal of Soil Science and Fertilizer
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• v.27 no.4
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• pp.255-262
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• 1994

Field microplot(D 20cm, L 85cm) experiment filled with Bonryang sandy loam soil(Typic Udifluvents) was conducted to obtain quantitative information on the movement of applied nutrients under different soil moisture regimes and ladino clover cultivation. The slaked lime was detected as an exchangeable Ca in the layer applied. The released Ca into the soil water proceeded rapid downward movement. Ca content in the soil was lowest at 20~30cm and tended to increase with soil depth. Downward movement of Mg in the slaked lime was similar to the movement of Ca to a greater extent. Plant uptake of Mg and leaching loss out of the microplot increased with lowering soil moisture tension. Downward movement of K was rapid in comparision with Ca and Mg. Lowering soil moisture tension enhanced both plant uptake and leaching loss of applied K. Irrigation at 0.2bar soil miosture condition increased plant uptake of Ca, Mg and K by 55, 71 and 76 % to compare to the plant uptake of Ca:0.49g, Mg:0.21g and K:1.90g/microplot at the nonirrigated condition respectively. Distribution of each of these elements seemed to be greatly affected by the downward movement of Ca with soil moisture, plant uptake of Mg(69%), and plant uptake and downward movement of K.

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.6
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• pp.773-778
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• 2007

This study was performed to develop a more simple and convenient heat treatment process for increasing heating temperature than the traditional 9-times steaming process for Rehmanniae radix Preparata (R. radix P.). The R. radix was heated to various temperatures (110, 120, 130, 140 and $150^{\circ}C$) for different lengths of time (1, 2, 3, 4 and 5 hr). Chromaticity, free sugar, amino acid, catalpol and 5-HMF (5-hydroxy-methyl-2-furaldehyde) content of water extracts of R. radix P. were analysed. With increasing heating temperature and time, the L, a and b-value of samples gradually decreased. Fructose and glucose contents were increased to $120^{\circ}C$ for 5 hr (5.21 and 6.67%, respectively) with no changes afterward. Sucrose content was not detected after $130^{\circ}C$. Total amino acid was increased to $140^{\circ}C$ and decreased afterward. The maximum total amino acid content was 4,172 mg/100 g at $140^{\circ}C$ for 2 hr (R. radix L.: 3,029 mg/100 g). The catalpol was decreased to $130^{\circ}C$ for 1 hr and not detected afterward. The 5-HMF content increased with increasing heating temperature and time. The maximum content of 5.HMF was 2.5% in $150^{\circ}C$ for 5 hr. Hence, it can be suggested that the heat treatment at $130^{\circ}C$ for 2 hr or more is the most optimum processing conditions, instead of the traditional 9.times steaming process.

• Korean Journal of Agricultural and Forest Meteorology
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• v.2 no.4
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• pp.156-166
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• 2000

This study was carried out to provide the information on seasonal variations of water content under highway asphalt pavements which influence on the dynamic behaviour and durability of pavements, and to assess the correlation between water content and soil or meteorological factors. Total eight sites for water content measurement which included fives sites in Kyungbu, two sites in Honam, and one site in Youngdong Highway were selected considering the variations in geology, topology and meteorology factors over all the country. Water contents under asphalt pavements were measured up to 170 cm depth every two week for total 13 months of August 1992 through September 1993 using neutron moisture meter(CPN-503DR). The range of water content ($\theta$$_{w}$) at the upper soils of above 50 cm depth was 7~12% and was not quite different regardless of sites, except for Iseo site. However, soil water contents below 60 or 70 cm depth were significantly different between the measurement sites, that is, the lowest water content was 5% at Kyungsan site and the highest water content was 20% at Iseo site. For all the sites, seasonal variations in water content during the experimental period were little, their range was within only 1 to 4%. Seasonal variations of water content in original or cutting area, which were 4% more or less, were slightly larger than in bedding areas, which were below 2%. Water contents under asphalt pavements had statistically significant positive correlations with silt and clay content in soil, but there were little correlations between water content and meteorological factors such as precipitation, relative humidity, mean air temperature, and wind velocity.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• Korean Journal of Heritage: History & Science
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• v.47 no.4
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• pp.22-47
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• 2014

This study was to understand the basic principles of the East Asian wooden structure system research and analysis. The Korea and China ancient architecture internal structure research that the combination of girders and crossbeams position. The ancient wooden structures of eastern Asian countries, Korea and China are not much different from each other in the principles of the wooden architecture structure, combining pillars, purlins and crossbeams. However, it seems that age-division, local-division, national-division differs in detail techniques. China ancient wooden structures combination of purlin and crossbeam, and So-seul Timber(Chinese name: Chashou叉手, Tuojiao 托脚) seems to show differences according to the age of the fulcrum position, detailed approach is also different according to various historical dynasty. Before in the 15th century, Purlin and Crossbeam are coupled to each other, but since the 15th century, seems to have developed a technique combined with each other Girder and Crossbeam and to prevent buckling of the Crossbeam cross-sectional area increased dramatically. For Tuojiao in China Tang-Wudai dynasty(A.D. 618~979), can see that saw the top position Girder and Tuojiao no direct coupling, can be seen as maintaining the safety of the material than the material of the inner wooden structures prevent buckling of the purlin. Korea ancient wooden structures of Goryeo dynasty(A.D. 918~1391), So-seul Timber(Chinese name Tuojiao) why do not to use the fashion? To use Purlin Lower backing material techniques to prevent buckling is a popular trend to stable can be thought of as a preferred way to maintain. I think that with universality beyond the local-division, national-division and the two countries since the 15th century of Korea and China ancient wooden structures detailed mechanism for the purlin buckling. In middle-late Chosen dynasty, The effect of Deotgeolyi- techniques and fleeting beams reduce the purlin buckling that reduces the load transmitted from purlin and crossbeam of how to reduce the load on the roof portion of the architecture fleeting beams used, which of craftsmanship of the Chosen Dynasty building can be referred to as another technique for preventing buckling purlin. This Korea and China ancient architecture purlin beam structure and material So-seul Timber study. Seems to be able to provide a basic research study to restore and designed the old wooden architectures.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.