• Title/Summary/Keyword: 소자 특성 저하

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Recent Progress of Ti3Ci2Tix MXene Electrode Based Self-Healing Application (Ti3Ci2Tix MXene 기반 전극 소재의 자가 치유 적용 기술 개발 동향)

  • Jun Sang Choi;Seung-Boo Jung;Jong-Woong Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.20-34
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    • 2023
  • Single or multi-layered two-dimensional (2D) materials, with thicknesses in the order of a few nanometers, have garnered substantial attention across diverse research domains owing to their distinct properties, including electrical conductivity, flexibility, and optical transparency. These materials are frequently subjected to repetitive mechanical actions in applications like electronic skin (E-Skin) and smart textiles. Moreover, they are often exposed to external factors like temperature, humidity, and pressure, which can lead to a deterioration in component durability and lifespan. Consequently, significant research efforts are directed towards developing self-healing properties in these components. Notably, recent investigations have revealed promising outcomes in the field of self-healing composite materials, with Ti3Ci2Tix MXene being a prominent component among the myriad of available 2D materials. In this paper, we aim to introduce various synthesis methods and characteristics of Ti3Ci2Tix MXene, followed by an exploration of self-healing application technologies based on Ti3Ci2Tix MXene.

The Study on New Radiating Structure with Multi-Layered Two-Dimensional Metallic Disk Array for Shaping flat-Topped Element Pattern (구형 빔 패턴 형성을 위한 다층 이차원 원형 도체 배열을 갖는 새로운 방사 구조에 대한 연구)

  • 엄순영;스코벨레프;전순익;최재익;박한규
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.7
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    • pp.667-678
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    • 2002
  • In this paper, a new radiating structure with a multi-layered two-dimensional metallic disk array was proposed for shaping the flat-topped element pattern. It is an infinite periodic planar array structure with metallic disks finitely stacked above the radiating circular waveguide apertures. The theoretical analysis was in detail performed using rigid full-wave analysis, and was based on modal representations for the fields in the partial regions of the array structure and for the currents on the metallic disks. The final system of linear algebraic equations was derived using the orthogonal property of vector wave functions, mode-matching method, boundary conditions and Galerkin's method, and also their unknown modal coefficients needed for calculation of the array characteristics were determined by Gauss elimination method. The application of the algorithm was demonstrated in an array design for shaping the flat-topped element patterns of $\pm$20$^{\circ}$ beam width in Ka-band. The optimal design parameters normalized by a wavelength for general applications are presented, which are obtained through optimization process on the basis of simulation and design experience. A Ka-band experimental breadboard with symmetric nineteen elements was fabricated to compare simulation results with experimental results. The metallic disks array structure stacked above the radiating circular waveguide apertures was realized using ion-beam deposition method on thin polymer films. It was shown that the calculated and measured element patterns of the breadboard were in very close agreement within the beam scanning range. The result analysis for side lobe and grating lobe was done, and also a blindness phenomenon was discussed, which may cause by multi-layered metallic disk structure at the broadside. Input VSWR of the breadboard was less than 1.14, and its gains measured at 29.0 GHz. 29.5 GHz and 30 GHz were 10.2 dB, 10.0 dB and 10.7 dB, respectively. The experimental and simulation results showed that the proposed multi-layered metallic disk array structure could shape the efficient flat-topped element pattern.

The characteristic of InGaN/GaN MQW LED by different diameter in selective area growth method (선택성장영역 크기에 따른 InGaN/GaN 다중양자우물 청색 MOCVD-발광다이오드 소자의 특성)

  • Bae, Seon-Min;Jeon, Hun-Soo;Lee, Gang-Seok;Jung, Se-Gyo;Yoon, Wi-Il;Kim, Kyoung-Hwa;Yang, Min;Yi, Sam-Nyung;Ahn, Hyung-Soo;Kim, Suck-Whan;Yu, Young-Moon;Ha, Hong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.1
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    • pp.5-10
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    • 2012
  • In general, the fabrications of the LEDs with mesa structure are performed grown by MOCVD method. In order to etch and separate each chips, the LEDs are passed the RIE and scribing processes. The RIE process using plasma dry etching occur some problems such as defects, dislocations and the formation of dangling bond in surface result in decline of device characteristic. The SAG method has attracted considerable interest for the growth of high quality GaN epi layer on the sapphire substrate. In this paper, the SAG method was introduced for simplification and fabrication of the high quality epi layer. And we report that the size of selective area do not affect the characteristics of original LED. The diameter of SAG circle patterns were choose as 2500, 1000, 350, and 200 ${\mu}m$. The SAG-LEDs were measured to obtain the device characteristics using by SEM, EL and I-V. The main emission peaks of 2500, 1000, 350, and 200 ${\mu}m$ were 485, 480, 450, and 445 nm respectively. The chips of 350, 200 ${\mu}m$ diameter were observed non-uniform surface and resistance was higher than original LED, however, the chips of 2500, 1000 ${\mu}m$ diameter had uniform surface and current-voltage characteristics were better than small sizes. Therefore, we suggest that the suitable diameter which do not affect the characteristic of original LED is more than 1000 ${\mu}m$.

High dispersion of Pt electro catalysts on porous carbon nanofibers for direct methanol fuel cells

  • Sin, Dong-Yo;An, Geon-Hyeong;Lee, Do-Yeong;Lee, Eun-Hwan;Lee, Yeong-Geun;An, Hyo-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.411.2-411.2
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    • 2016
  • 직접 메탄올 연료전지 (DMFCs)는 친환경적이고 낮은 작동 온도로 인한 빠른 구동, 높은 에너지 밀도 등 다양한 장점을 가지고 있어 차세대 에너지 변환소자로 많은 관심을 받고 있다. 직접 메탄올 연료전지는 메탄올을 연료로 사용하며, 메탄올이 보유하고 있는 화학적 에너지를 전기 에너지로 변환하는 장치로써 음극에서는 백금 촉매로 인한 메탄올 산화반응, 양극에서는 환원 반응이 일어나며 전기화학적 구동을 하게 된다. 하지만 일산화탄소 피독으로 인한 촉매 활성 저하, 메탄올의 cross over, 백금 촉매 사용으로 인한 고비용 등의 문제점을 가지고 있다. 따라서 많은 연구자들이 백금 사용량을 줄이고 백금 촉매를 고르게 분포하기 위해 값이 저렴하고 넓은 비표면적을 갖는 탄소계 (graphite, graphene, carbon nanotube, carbon nanofiber 등) 지지체 재료를 도입하고 있다. 이 중 탄소나노섬유 (carbon nanofibers, CNFs)는 우수한 전기전도도와 열적/화학적 안정성을 가지고 있으며, 특히 넓은 비표면적을 가지고 있어 백금 촉매의 지지체로서 많은 연구가 진행되고 있다[1]. 따라서 우리는 전기방사법을 활용하여 넓은 비표면적을 보유하는 다공성 탄소나노섬유를 성공적으로 합성하였다. 또한, 이를 백금 촉매의 지지체로 도입하여 직접 메탄올 연료전지를 위한 다공성 탄소나노섬유에 담지된 고분산성 백금 촉매를 제조하였다. 제조한 다공성 탄소나노섬유의 형상 및 구조 분석은 주사전자 현미경 (field-emission scanning electron microscopy)와 투과전자 현미경 (transmission electron microscopy)를 이용하여 분석하였고, 결정구조와 화학적 결합상태는 X-선 회절분석 (X-ray diffraction) 및 X-선 광전자 분광법 (X-ray photoelectron spectroscopy)를 이용하여 규명하였다. 전기화학적 특성은 순환 전압 전류법 (cyclic voltammetry)를 이용하였다. 이러한 실험 결과들을 바탕으로 다공성 탄소나노섬유에 담지된 고분산성 백금 촉매의 자세한 특성을 본 학회에서 다루도록 하겠다.

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A Study of MTTF improvement of Thermal Device cryogenic-cooler (열상장비 냉각기의 MTTF 개선연구)

  • Jung, Yunsik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.7
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    • pp.252-257
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    • 2018
  • In this paper, we propose a mean time to failure (MTTF) to improve the solution for a cryogenic cooler, which is an important part of a cooled thermal device. Common electronic devices have a high possibility of failure due to various environmental factors, such as temperature and humidity. But some special devices (such as thermal devices) are designed to overcome environmental factors. The most affected part of a cooled thermal device's MTTF is the cryogenic cooler. The MTTF of a cryogenic cooler is affected by the device's internal heat. Therefore, if the device's internal heat is reduced, the cryogenic cooler's MTTF increases. From the present device's internal heat simulation, we analyze the improvement method of the device. The proposed improvement method's effectiveness is verified by simulation and MTTF calculation.

A Study on the Heat Sink with internal structure using Peltier Module in the Forced Convection (강제대류에서 펠티에 소자를 이용한 내부터널 구조를 가지는 히트싱크에 관한 연구)

  • Lee, Min;Kim, Tae-Wan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.6
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    • pp.3410-3415
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    • 2014
  • The heat generated by electronic devices can result in performance degradation. Therefore, a heat sink has been used to release the operating heat into the air outside. This study addressed a methodology for a heat sink with an inner tunnel. Under forced convection conditions, the heat transfer characteristics were different so the cooling and heating performances were studied for the heat sink with an inner tunnel. This was evaluated by performing the experimental test examining the heat transfer characteristics related to the variance in time and temperature distribution. In the cooling experiment, the temperature of the A-shape was lower than that of the B-shape, when the voltage was 10 V. These experimental results indicate the optimal cooling effect. In a heating experiment, the temperature of the A-shape was higher than that of the B-shape, when the voltage was 13 V. The experimental results showed that the temperature and efficiency of the A-shape were higher than those of the B-shape.

Soft Start-up Algorithm of Single-Phase Induction Motor Based on Full-bridge Inverter (풀 브리지 인버터 기반 단상 유도전동기의 소프트 기동 기법)

  • Kim, Tae-Seong;Kang, Hyung-Do;Hwang, Seon-Hwan
    • Journal of IKEEE
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    • v.22 no.2
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    • pp.258-265
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    • 2018
  • This paper proposes an algorithm for reducing the starting current when the single-phase induction motor starts and analyzes its operation. Generally, the single-phase induction motors require several starters to generate the starting torque due to their structural characteristics. In this paper, a capacitor-start / capacitor-run method of the single-phase induction motor is basically adopted. This conventional method is efficient and has a large starting torque, but it generates about 5 ~ 6 times of inrush current at startup. As a result, the freezer starting device and peripheral devices are damaged and life time may be reduced. To reduce the inrush current, the current control algorithm based on the virtual dq model is presented to control the starting current. In addition, it validates the proposed algorithm through experiments to smooth transit from start-up operation to the rated operating region.

The Compact Hairpin-Shaped Duplexer using a BMT Substrate with a High Dielectric Constant (고유전율의 BMT 기판을 이용한 소형 헤어핀 구조의 듀플렉서 설계)

  • Kwon, Koo-Hyung;Han, Sang-Min;Nahm, San;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.10
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    • pp.1044-1051
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    • 2003
  • In this paper, a compact planar microwave duplexer on the high dielectric substrate is presented. As the Ba(Mg$\sub$1/3/Ta$\sub$2/3/)O$_3$(BMT) has good dielectric performances with a high dielectric constant of $\varepsilon$$\sub$r/=23, it is suitable to apply to a printed circuit board fur reducing its circuit size. The BMT substrate is fabricated by using a tape casting fabrication process, and circuit patterns are screen-printed on it by suing silver paste. The open-loop ring type duplexer is designed and implemented on the BMT substrate, and it achieves the smaller size by 80% than one on a commercial substrate($\varepsilon$$\sub$r/=6.15) without degenerating its performance. Therefore the proposed BMT substrate has provided the miniaturization of the duplexer, moreover it can make a contribution towards reducing the size of microwave passive circuits.

A Design of Microstrip Directional Coupler with the Improved Directivity Characteristic (개선된 지향성을 갖는 마이크로스트립 방향성 결합기 설계)

  • Kim, Chul-Soo;Lim, Jong-Sik;Kim, Dong-Joo;Ahn, Dal
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.6
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    • pp.548-553
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    • 2004
  • In this paper, single, two, and three-section microstrip directional couplers are implemented for realizing the high directivity characteristics. The achievement of the high directivity with microstrip configuration is carried out by the distributed capacitor to decrease the even and odd mode phase difference. Capacitive compensation is performed by gap coupling of open stub formed in sub-coupled line. Therefore, insertion loss and power handling capability are not affected by the gap coupling. The proposed structure is easy to fabricate and incorporate another microwave device due to the planner microstrip. We designed and fabricated single, two, and three-section directional coupler with 20 ㏈ coupling. In spite of microstrip structure, the capacitive compensation structure shows 30 ㏈, 27 ㏈, and 25 ㏈ of directivity in single, two, and three-section directional couplers, respectively.

Changes of Electrical Characteristics of Low-voltage ZnO Varistors by a lightning Impulse Current (뇌충격전류에 의한 저압용 산화아연형 바리스터의 전기적 특성변화)

  • 이종혁;한주섭;길경석;권장우;송동영;최남섭
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.4
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    • pp.793-801
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    • 2000
  • This paper presents the effect of lightning impulse current on ZnO varistors(390[V], 6.5[kA]) used in low-voltage AC mains as a protective device against transient overvoltages. The electrical characteristics of ZnO varistors are deteriorated by overtime impulse current, and a deteriorated ZnO varistor is brought to a thermal runaway and finally destroyed even in normal operating voltage. Therefore, it is important to estimate the changes of the electrical characteristics of ZnO varistors. A lightning impulse current standardized in IEC 61000-4-5 is applied to the varistors to accelerate deterioration, and the energy applied to the varistor at each time is about 12 [J]. In the experiment, various parameters such as leakage current, reference voltage are measured with the number of applied impulse current. Also, micro-structure changes of the varistors after applying the lightning impulse current of 200 times are compared. The electrical characteristics of the varistors are degraded by overtime impulse current, showing increase in leakage current and decrease in reference voltage.

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