• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.9-16
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• 1999

When the conventional IPD (inter-poly-dielctrics) layer with ONO(oxide-nitride-oxide) structure was used in the Flash EEPROM cell, its data retention characteristics were significanfly degraded because the top oxide of the ONO layer was etched off due to the cleaning process used in the gate oxidation process for the peripheral MOSFETs. When the IPD layer with the ONON(oxide-nitride-oxide-nitride) was used there, however, its data retention characteristics were much improved because the top nitride of the ONON layer protected the top oxide from being etched in the cleaning process. For the modelling of the data retention characteristics of the Flash EEPROM cell with the ONON IPD layer, the decrease of the threshold voltage cue to the charge loss during the bake was here given by the empirical relation ${\Delta}V_t\; = \;{\beta}t^me^{-ea/kT}$ and the values of the ${\beta}$=184.7, m=0.224, Ea=0.31 eV were obtained with the experimental measurements. The activation energy of 0.31eV implies that the decrease of the threshold voltage by the back was dur to the movement of the trapped electrons inside the inter-oxide nitride layer. On the other hand, the results of the computer simulation using the model were found to be well consistent with the results of the electrical measurements when the thermal budget of the bake was not high. However, the latter was larger then the former in the case of the high thermal budger, This seems to be due to the leakage current generated by the extraction of the electrons with the bake which were injected into the inter-oxide niride later and were trapped there during the programming, and played the role to prevent the leakage current. To prevent the generation of the leakage current, it is required that the inter-oxide nitride layer and the top oxide layer be made as thin and as thick as possible, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.17-22
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• 1999

In this paper, the results of the studies about a new proposal where the ONON(oxide-nitride-oxide-nitride) layer instead of the conventional ONO(oxide-nitride-oxide) layer is used as the IPD(inter-poly-dielectrics) layer to improve the data retention problem in the Flash EEPROM cell, have been discussed. For these studies, the stacked-gate Flash EEPROM cell with an about 10nm thick gate oxide and on ONO or ONON IPD layer have been fabricated. The measurement results have shown that the data retention characteristics of the devices with the ONO IPD layer are significantly degraded with an activation energy of 0.78 eV. which is much lower than the minimum value (1.0 eV) required for the Flash EEPROM cell. This is believed to be due to the partial or whole etching of the top oxide of the IPD layer during the cleaning process performed just prior to the dry oxidation process to grow the gate oxide of the peripheral MOSFET devices. Whereas the data retention characteristics of the devices with the ONON IPD layer have been found to be much (more than 50%) improved with an activation energy of 1.10 eV. This must be because the thin nitride layer on the top oxide layer in the ONON IPD layer protected the top oxide layer from being etched during the cleaning process.

• Journal of Korea Soil Environment Society
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• v.3 no.3
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• pp.55-62
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• 1998

Soils contaminated with hydrocarbons and residual metals can be effectively treated by soil washing. In developing the soil washing process several major effects for separating contaminants from coarse soils progressively improved upon combinations of mining and chemical processing approaches. The pilot-scale soils washing process consists of the four major parts : 1) abrasive scouring, 2) scrubbing action using a washwater that is sometimes augmented by surfactants or other agents, 3) rinsing, and 4) regenerating the contaminated washwater. The plant was designed based upon the treatment capacity > 5 ton/hr on site. The lumpy contaminated soil fractions first experience deagglomeration and desliming passing through a rolling mill pipe. In the second unit the attrition scrubbing module equipped with paddles uses high-energy to remove contaminants from the soils. And a final rinsing system is assembled to separate the washwater containing the contaminants and very fine soils from the washed coarse soils. For recycling the contaminated washwater passes through a washwater clarifier specifically designed for flocculation, sedimentation and gravity separation of fine as well as flotation and separation of oils from the washwater. In order to more rapidly assess the applicability of soil washing at a potential site while minimizing the expense of mobilization and operation, a mobile-type soil washing process which is self-contained upon a trailer will be further developed.

• Journal of Korean Society of Environmental Engineers
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• v.38 no.9
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• pp.469-475
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• 2016

The study is the result of an practical operation analysis for the full scale fishery product wastewater treatment plant with immersed MBR (iMBR) process. Since fishery product industries show a wide range of wastewater generation by the season, design and operation of the equalization basin are very important factor. The aeration system for the equalization basin mixing can save the chemical consumption for followed system through the restriction of acid fermentation. The concentrations of wastewater primary DAF process treated were BOD 2,291 mg/L, $COD_{Mn}$ 530 mg/L, SS 256.8 mg/L, T-N 38 mg/L, T-P 13.5 mg/L respectively. It was considered that iMBR is the most efficient biological process for high salinity content wastewater since It is irrelevant to the capability of the sludge precipitation. SADp and SADm were 0.31, $26.5m^3/hr{\cdot}m^3$ respectively. In iMBR process, the critical F/M ratio was derived at 0.08~0.10 gBOD/gMLSS by analysing the correlations between MLSS, normalized TMP and temperature. The effluent concentrations were BOD 1.8 mg/L, $COD_{Mn}$ 12.4 mg/L, SS 1.0 mg/L, T-N 7.85 mg/L, T-P 0.1 mg/L and removal efficiencies were 99.9%, 97.6%, 96.3%, 95.7%, 97.8% respectively.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.10
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• pp.724-729
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• 2013

Simultaneous nitrification and denitrification (SND) occurs concurrently in the same reactor under micro dissolved oxygen (DO) conditions. Anaerobic zone was applied for phosphorus release prior to an aerated membrane bio-reactor (MBR), and anoxic zone was installed by placing a baffle in the MBR for enhancing denitrification even in high DO concentration in the MBR. Phosphorus removal was tested by alum coagulation in the anaerobic reactor preceding to MBR. DO concentration were 2.0, 1.5, 1.0, 0.75 mg/L in the MBR at different operating stages for finding optimum DO concentration in MBR for nitrogen removal by SND. pH was maintained at 7.0~8.0 without addition of alkaline solution even with alum addition due to high alkalinity in the raw sewage. Both TCODcr and $NH_4^+$-N removal efficiency were over 90% at all DO concentration. TN removal efficiencies were 50, 51, 54, 66% at DO concentration of 2.0, 1.5, 1.0, 0.75 mg/L, respectively. At DO concentration of 0.75 mg/L with addition of alum, TN removal efficiency decreased to 54%. TP removal efficiency increased from 29% to 95% by adding alum to anaerobic reactor. The period of chemical backwashing of the membrane module increased from 15~20 days to 40~50 days after addition of alum.

• Proceedings of the Mineralogical Society of Korea Conference
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• 2003.05a
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• pp.51-51
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• 2003

임진강대의 변성이질암은 전형적인 바로비안형 변성분대를 보이며, 남쪽으로 갈수록 변성도가 증가하여 석류석$\longrightarrow$십자석$\longrightarrow$남정석 대를 정의한다. 우리는 반상변정의 성장과 여러번에 걸친 광역변형작용의 연관성을 밝히기 위해 광물의 반응관계와 성장순서 그리고 미구조(microstructure)를 -특히 석류석에 대해서- 연구하였다. 임진강대는 크게 세 번에 걸쳐 변형작용을 받은 것으로 해석된다: (1) 지각 두께의 증가에 수반된 압축변형작용 (D$_{n-1}$), (2) 주 엽리(Sn)를 만든 변형작용(Dn), 그리고 (3) 연성전단작용에 수반된 신장변형작용(D$_{n+1}$ ). 석류석대의 석류석 반상변정에서는 약간 휘어진 포유물 궤적(inclusion trail)이 주 엽리면에 대해 연속적이며, 이는 Dn과 동시기에 반상변정이 생성되었음을 지시한다. 이러한 석류석은 녹니석과 백운모로 구성된 주 엽리를 치환하면서 자라기 때문에, 녹니석+백운모+석영=석류석+흑운모+$H_2O$의 반응에 의해 만들어진 것으로 해석된다. 석류석 자형변정(idioblast)이 주 엽리를 자르면서 성장하기도 하는데, 이는 Dn 이후에도 석류석이 후구조(post-tectonic) 광물로 성장했음을 지시한다. 또한, 이러한 석류석은 흑운모를 치환하기 때문에, 동구조(syn-tectonic) 석류석의 생성반응에서와는 달리 흑운모가 반응물임을 알 수 있다. 한편, 십자석대의 석류석은 포유물 궤적에 의해 정의되는 S$_{n-1}$면이 주 엽리면과 사각을 이루며 단속적이기 때문에, D$_{n-1}$과 Dn 사이에 자란 것으로 해석된다. 이와는 대조적으로 십자석은 주 엽리를 치환하면서 자라고 있어서 Dn과 동시기 혹은 Dn 이후에 자랐을 것으로 해석된다..의 환경문제를 발생하지 않으며, 공정액에 첨가제를 투입하지 않으므로 순환형 친환경공정으로 각광받을 수 있다. 본 연구에서는 고온, 고농도의 NaOH 수용액의 처리에 적합한 막소재와 발생될 수 있는 제반 문제점 등을 파악하였고, 장기간의 실험을 거쳐 최적 투과 압력(Trans membrane pressue), 세정 조건 및 주기, 막재질에 있어서 보강하여야 할 Point, 최적 운전 조건들을 토출해 내었고, 향후 실제 Plant에 적용할 계획이다.는 양적으로 다른 두 가지의 유사한 마그마가 수반된 것으로 추정된다. 것으로 추정된다.를 사용하지 않음으로써 효과적이고 만족할 만한 심근보호 효과를 보였다.를 보였다.4주까지에서는 비교적 폐포는 정상적 구조를 유지하면서 부분적으로 소폐동맥 중막의 비후와 간질에 호산구 침윤의 소견이 특징적으로 관찰되었다. 결론: 분리 폐 관류는 정맥주입 방법에 비해 고농도의 cisplatin 투여로 인한 다른 장기에서의 농도 증가 없이 폐 조직에 약 50배 정도의 고농도 cisplatin을 투여할 수 있었으며, 또한 분리 폐 관류 시 cisplatin에 의한 직접적 폐 독성은 발견되지 않았다이 낮았으나 통계학적 의의는 없었다[10.0%(4/40) : 8.2%(20/244), p>0.05]. 결론: 비디오흉강경술에서 재발을 낮추기 위해 수술시 폐야 전체를 관찰하여 존재하는 폐기포를 놓치지 않는 것이 중요하며, 폐기포를 확인하지 못한 경우와 이차성 자연기흉에 대해서는 흉막유착술에 더 세심한 주의가 필요하다는 것을 확인하였다. 비디오흉강경수술은 통증이 적고, 입원기간이 짧고, 사회로의 복귀가 빠르며, 고위험군에 적용할 수 있고, 무엇보다도 미용상의 이점이 크다는 면에서 자연기흉에 대해 유용한 치료방법임에는 틀림이 없으나 개흉술에 비해 재발율이 높고 비용이 비싸다는 문제가 제기되고 있는 만큼 더 세심한 주의와 장기 추적관찰이 필요하리라 사료된다.전 도부타민 심초음파는 관상동맥우회로술 후

• Clean Technology
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• v.16 no.1
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• pp.39-45
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• 2010

In this paper, 4 bundle modules of PVDF hollow fiber membrane from Woori Tech company (Korea) were manufactured in a treatment capacity of 10 ton/day. A membrane bioreactor (MBR) pilot plant was installed at Sooyoung Wastewater Treatment Plant in Busan. An alternating aeration process was selected to avoid the concentration profile of suspended solid (SS) in the MBR. For stable operation, raw wastewater with mixed liquor suspended solid (MLSS) of about 1,000 ppm, which was in-flowed from the aeration tank of the wastewater treatment plant, was fed and filtered through the pilot plant. Subsequently the pilot plant were washed three times with washing water: once with ethanol solution, once with a solution of 5% NaOCl, and finally with washing water. After the chemical washing, the remaining water in the MBR was fed into the pilot plant. As a result, the SS removal efficiency was found to be more than 99.9%. The amount of filtrate with the aeration tank influent decreased by 16%, compared with that from the initial conditions, giving rise to 30% increase in the suction pressure. These results were used to set up continuous operation conditions. The results from the continuous operation with influent MLSS of 1,900 mg/L showed that the SS removal efficiency was about 99.99% and that the amount of filtrate and the suction pressure were $42{\sim}52L/m^2$ and 16~20 cmHg, respectively, indicating stable operation of the pilot plant. However, for the reuse of wastewater, methods need to be sought to avoid growth of algae which affects the SS removal efficiency at inlet and outlet of the permeate tank.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.263-263
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• 2016

최근 반도체 시장에서는 저비용으로 고성능 박막 트랜지스터(TFT)를 제작하기 위한 다양한 기술들이 연구되고 있다. 먼저, 재료적인 측면에서는 비정질 상태에서도 높은 이동도와 가시광선 영역에서 투명한 특성을 가지는 산화물 반도체가 기존의 비정질 실리콘이나 저온 폴리실리콘을 대체하여 차세대 디스플레이의 구동소자용 재료로 많은 주목받고 있다. 또한, 공정적인 측면에서는 기존의 진공장비를 이용하는 PVD나 CVD가 아닌 대기압 상태에서 이루어지는 용액 공정이 저비용 및 대면적화에 유리하고 프리커서의 제조와 박막의 증착이 간단하다는 장점을 가지기 때문에 활발한 연구가 이루어지고 있다. 특히 산화물 반도체 중에서도 indium-gallium-zinc oxide (IGZO)는 비교적 뛰어난 이동도와 안정성을 나타내기 때문에 많은 연구가 진행되고 있지만, 산화물 반도체 기반의 박막 트랜지스터가 가지는 문제점 중의 하나인 문턱전압의 불안정성으로 인하여 상용화에 어려움을 겪고 있다. 따라서, 본 연구에서는 기존의 산화물 반도체의 불안정한 문턱전압의 문제점을 해결하기 위해 마이크로웨이브 열처리를 적용하였다. 또한, 기존의 IGZO에서 suppressor 역할을 하는 값비싼 갈륨(Ga) 대신, 저렴한 지르코늄(Zr)과 하프늄(Hf)을 각각 적용시켜 용액 공정 기반의 Zr-In-Zn-O (ZIZO) 및 Hf-In-Zn-O (HIZO) TFT를 제작하여 시간에 따른 문턱 전압의 변화를 비교 및 분석하였다. TFT 소자는 p-Si 위에 습식산화를 통하여 100 nm 두께의 $SiO_2$가 열적으로 성장된 기판 위에 제작되었다. 표준 RCA 세정을 진행하여 표면의 오염 및 자연 산화막을 제거한 후, Ga, Zr, Hf 각각 suppressor로 사용한 IGZO, ZIZO, HIZO 프리커서를 이용하여 박막을 형성시켰다. 그 후 소스/드레인 전극 형성을 위해 e-beam evaporator를 이용하여 Ti/Al을 5/120 nm의 두께로 증착하였다. 마지막으로, 후속 열처리로써 마이크로웨이브와 퍼니스 열처리를 진행하였다. 그 결과, 기존의 퍼니스 열처리와 비교하여 마이크로웨이브 열처리된 IGZO, ZIZO 및 HIZO 박막 트랜지스터는 모두 뛰어난 안정성을 나타냄을 확인하였다. 결론적으로, 본 연구에서 제안된 마이크로웨이브 열처리된 용액공정 기반의 ZIZO와 HIZO 박막 트랜지스터는 추후 디스플레이 산업에서 IGZO 박막 트랜지스터를 대체할 수 있는 저비용 고성능 트랜지스터로 적용될 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.89-89
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• 2009

높은 소수반송자 수명(life-time)을 가지는 고품위 실리콘 기판은 고효율 실리콘 이종접합 태양전지 제작을 위한 중요 요소 기술 중 하나이다. 본 연구에서는 n-type c-Si 기판을 이용한 고효율 실리콘 이종접합 태양전지제작을 위해 hot water oxidation(HWO) 공정을 이용하여 고품위 실리콘 기판을 제작하였다. 실리콘 기판의 특성 분석은 Qusi-steady state photoconductance (QSSPC)를 이용하여 소수반송자 수명을 측정하였으며, 기판의 면저항 및 wetting angle을 측정하여 공정에 따른 특성변화를 분석하였다. Saw damage etching 된 기판을 웨이퍼 표면으로부터 particle, 금속 불순물, 유기물 등의 오염을 제거하기 위해 $60{\sim}85^{\circ}C$로 가열된 Ammonia수, 과산화수소수($NH_4OH/H_2O_2/H_2O$), 염산 과산화수소수($HCL/H_2O_2/H_2O$) 및 실온 희석불산(DHF) 중에 기판을 각각 10분 정도씩 침적하여, 각각의 약액 처리 후에 매회 10분 정도씩 순수(DI water)에서 rinse하여 RCA 세정을 진행한 후 HWO 공정을 통해 기판 표면에 얇은 산화막 을 형성시켜 패시베이션 해주었다. HF를 이용하여 자연산화막을 제거시 HWO 공정을 거친 기판은 매끄러운 표면과 패시베이션 영향으로 기판의 소수 반송자 수명이 증가하며, 태양전지 제작시 접촉저항을 감소시켜 효율을 증가 시킬수 있다. HWO 공정은 반응조 안의 DI water 온도와 반응 시간에 따라 life-time을 측정하여 진행하였으며, 이후 PE-CVD법으로 증착된 a-Si:H layer 및 투명전도 산화막, 금속전극을 증착하여 실리콘 이종접합 태양전지를 제작하였다.

• Journal of Conservation Science
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• v.30 no.2
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• pp.157-168
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• 2014

This study, by selecting 3 kinds(Polish T, H, C) of metal polish being frequently used for silver archival objects treatment at present, a polish having excellent conservative property that minimizes damage of silver surface while effectively removing its yellow discolored layer by each using tool was intended to be discovered by comparing performance of tarnish inhibitor, corrosion inhibitor contained in each polish. As a result of analysis, it was confirmed that specimen that was cleaned with cotton swab and lint-free wipe by using Polish C provides not only uniformed surface expression and minimum damage but also removal function of corrosion layer. In addition, even though tarnish inhibition film should be formed after polish treatment, discolored phenomenon is unable to be prevented but among those polishes, Polish C was represented to be most stable against UV and yellowing and it showed relatively better features than that of Polish H and T in terms of hydrophobic, dispersive property. Through this, it is confirmed that Polish C would show the most excellent performance among polishes being used for conserving silver archival objects.