• Korean Journal of Environmental Biology
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• v.22 no.2
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• pp.265-272
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• 2004

Biological characteristics of anodic electrolyzed water were investigated in this study. Linear DNAs which were incubated at $4^\circ{C}$ and $25^\circ{C}$ for 10 mins in the anodic electrolyzed water were degraded about 40% and 50%, respectively. But the DNA was amplified pretty well without any degradation through polymerase chain reaction in the presence of anodic electrolyzed water. Protein degradation hardly occurred in the distilled water during entire incubation time of 7 days, while protein began to be degraded from 4 days in the anodic electrolyzed water. Rice seeds could germinate in the distilled water and anodic electrolyzed water with the same germination ratio, however, the anodic electrolyzed water inhibited the growth of roots and total length of rice seedlings in the soil. Anodic electrolyzed water did not affect the growth curve and cell number of marine alga significantly. The anodic electrolyzed water inhibited the browning of potato by inactivating 50% of polyphenol oxidase activity.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.24-30
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• 1994

Effect of low temperature retrogression on RRA treatment were investigated in the thermomechanically treated 7075 Al alloy. The complete dissolution of GP zones did not occur during retrogression at $170^{\circ}C$ in T6 material. llrop in strength during initial stage of retrogression was due to the partial dissolution of GP zones. And the strength increased with the formation of $\mu '$ and decreased again with the growth of $\mu '$ and/or formation of $\mu '$ When RRA treatment was applied at the minimum or the secondary peak (maximum) in the hardness curve of retrogression treatment, SCC property was improved markedly without reduction of the strength in comparision with that of T6 materials. And the rhanges in the matrix were not sensitive with time during retrogression at low temperature of $170^{\circ}C$ that the strength and SCC properties were similar at both points in the hardness curve of retrogression treatment.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.169-175
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• 2009

In this experiment molybdeum oxide($MoO_3$) films were prepared by a magnetic null discharge(MND) sputtering system and fundamental properties by XRD, XPS and SEM analysis were investigated. The initial and mean insulation resistance of the same with $MoO_3$ film were about 1.4[$M{\Omega}$] and 800[$k{\Omega}$] under the condition of applied voltage of 400[V]. The preferred orientation in the films changed from(100) to (210) with substrate temperature. Two XPS peaks of the $MoO_3$ photoelectron were detected at the binding energies of 228.9[eV] and 232.4[eV], while the binding energy of the O1s peak was 532.6[eV]. The substrate temperature and reactivity gives large effects to the structure and growth of the film and system is also very useful for performing the uniform reactive deposition. It can be found from the result of a $MoO_3$ film deposition that the system is very useful for performing the uniform reactive sputtering.

• The KIPS Transactions:PartD
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• v.15D no.3
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• pp.313-320
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• 2008

A typical software development life cycle consists of a series of phases, each of which has some ability to insert and detect defects. To achieve desired quality, we should progress the defect removal with the all phases of the software development. The well-known model of phase-based defect profile is Gaffney model. This model assumes that the defect removal profile follows Rayleigh curve and uses the parameters as the phase index number. However, these is a problem that the location parameter cannot present the peak point of removed defects when you apply Gaffney model to the actual situation. Therefore, Gaffney model failed to represent the actual defect profile. This paper suggests two different models: One is modified Gaffney model that introduce the parameter of Putnam's SLIM model to replace of the location parameter, the other is the growth function model because the cumulative defect profile shows S-shaped. Suggested model is analyzed and verified by the defect profile sets that are obtained from 5 different software projects. We could see from the experiment, the suggested model performed better result than Gaffney model.

• Journal of the Korean Chemical Society
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• v.25 no.5
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• pp.325-330
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• 1981

The electrochemical behavior of cadmium electrode for the nickel-cadmium battery system has been studied by cyclic voltammetry, controlled potential electrolysis and X-ray diffraction method. Cathodic polarization curve for cadmium hydroxide electrode prepared by electrochemical pretreatment of metallic cadmium showed two peaks. It has been found that cadmium hydroxide was reduced to cadmium metal at the first peak potential, whereas very activated metal of cadmium which was strongly oriented (002) rather than (101) was formed at the second peak potential. It was also found that the cadmium formed at the second peak potential reacted rapidly with oxygen. Therefore, it could be presumed that the cadmium recombination reaction with the oxygen was chemical, and could be represented as $2Cd + O_2 + 2H_2O\;{\longrightarrow}\;2Cd(OH)_2$.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.181-185
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• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.46-50
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• 2002

Soft magnetic Mumetal thin film was fabricated under magnetic field at various substrate temperatures. High vacuum annealing was carried out at 200$\^{C}$ during 1 hr. The in-plane anisotropy of Mumetal thin film was determined from hysteresis loops measured by VSM when the sample axis varied from the field direction from 0°to 180°. As the substrate temperature increases, the coercivity in easy direction decreases, but uniaxial anisotropy deviates from the field direction. After vacuum annealing at 200$\^{C}$ for 1 hr, the uniaxial anisotropy is improved irrespective of substrate temperature. When the substrate temperature was 50$\^{C}$, the anisotropy field is 4.3 Oe. As the substrate temperature increases anisotropy field decreases. Uniaxial anisotropy of Mumetal thin film was formed best at 50$\^{C}$ before and after annealing.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.73-77
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• 2008

Purpose: This research is that prepare amorphous or crystalline ZnO thin films with pure strong UV emission on soda-lime-silica glass (SLSG) substrates by low-temperature annealing. Methods: Growth characteristic and optical properties of the amorphous or nano-crystalline ZnO thin films prepared on soda - lime - silica glass substrates by chemical solution deposition at 100, 150, 200, 250 and $300^{\circ}C$ were investigated using X-ray diffraction analysis, ultraviolet - visible - near infrared spectrophotometer, and photoluminescence. Results: The films exhibited an amorphous pattern even when finally annealed at $100^{\circ}C{\sim}200^{\circ}C$ for 60 min, while crystalline ZnO was obtained by prefiring at 250 and $300^{\circ}C$. The photoluminescence spectrum of amorphous ZnO films shows a strong NBE emission, while the visible emission is nearly quenched. Conclusions: These results indicate it should be possible to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below $200^{\circ}C$, in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.161-161
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• 2010

n-type 반도체 특성을 띄는 $SnO_2$ 나노선은 가스 센서, 투명 소자, 태양광 전지 등으로 널리 사용되고 있다. 본 연구에서는 화학기상증착법으로 성장한 $SnO_2$ 나노선으로 폴리이미드 (PMDA-ODA: PI) 박막을 게이트 절연막으로 이용한 전계효과트랜지스터를 플렉서블 기판에 제작하고 전기적 특성을 분석하였다. 전자 전달 특성 곡선으로부터 n-형의 반도체 특성을 확인하였으며, 대부분의 산화금속 나노선에서와 같이 매우 큰 전기적 히스테리시스가 관찰되었다. 산화금속계통 나노선 소자의 히스테리시스는 나노선 표면에 산소 및 물 분자가 흡착되어 생기는 전자 갇힘 현상이 가장 큰 원인으로 알려져 있는데, 이러한 히스테리시스를 조절하거나 없애는 것은 소자의 특성 향상에 있어 매우 중요하다. 한편 PI 절연막에는 느린 분극 현상을 만드는 OH 반응기가 존재하기 때문에 나노선과는 반대 방향의 히스테리시스를 보일 것으로 예상된다. 본 연구에서는 제작된 $SnO_2$ 나노선 FET에서 PI 게이트 절연막의 경화 정도에 따른 히스테리시스를 조사하였다. FT-IR 측정에 따르면, PI 필름에 존재하는 OH 반응기는 PI를 경화시킴에 따라 감소하였으며 전기적인 히스테리시스도 감소하였다. 따라서, 절연막을 경화시키지 않았을 때는 PI 내부에 다량의 OH 반응기가 존재하여, PI의 히스테리시스가 나노선 히스테리시스보다 더 크게 작용하여, 전체적으로는 PI의 특성인 반시계 (counterclockwise) 방향의 히스테리시스를 나타내었다. 한편, 절연막을 완전히 경화시키면, OH 반응기는 대부분 사라지고 나노선의 히스테리시스만 발현되어 소자는 시계방향의 히스테리시스를 보였다. 이러한 실험결과를 통해, PI 박막을 $250^{\circ}C$ 에서 약 7분간 경화시켰을 때 나노선과 절연막의 히스테리시스가 가장 이상적으로 상쇄되어 전체적으로 히스테리시스가 매우 작아진 것을 관찰할 수 있었다. 이는 향후 나노선 FET의 안정적인 응용에 매우 유용한 결과로 활용될 것으로 예측된다.

• Proceedings of the Korea Water Resources Association Conference
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• 2011.05a
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• pp.105-105
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• 2011

라오스는 최근 수년간 연 7~8%의 높은 GDP 성장률을 달성할 만큼 전세계 투자가 집중되고 있다. 라오스 수도인 비엔티안시를 비롯한 라오스의 메콩강변 주요도시는 매년 크고 작은 홍수로 인해 인명 및 재산피해가 지속되고 있으나, 현재 라오스에 대한 국가차원의 홍수저감 및 관리 프로그램이 전무한 실정에 있어, 라오스의 급속한 발전속도와 함께 홍수위험도가 급증될 것으로 예상된다. 특히, 라오스 주요도시 중 홍수위험도가 가장 높을 것으로 예상되는 비엔티안시에서 홍수로 인한 주민의 인명 및 재산피해를 방지하기 위해 홍수방어대책을 마련하는 것이 매우 시급한 실정에 있다. 따라서, 본 연구에서는 라오스 비엔티안시를 대상으로 메콩강 홍수의 저감 및 관리 방안을 제시하였다. 메콩강의 수문학적 특성을 분석하기 위해 메콩강 유역, 기후 및 기상조건, 유출특성을 검토하였고, 과거 메콩강의 홍수사례, 홍수수문곡선 등을 토대로 메콩강에 적합한 홍수규모인자로서 첨두홍수량, 홍수체적, 홍수지속시간을 제시하였다. 홍수체적과 첨두홍수량의 상관도를 분석하여 과거 발생한 홍수의 규모를 정량화하였으며, 확률분석을 통해 계획빈도에 대한 홍수체적 및 첨두홍수량을 산정하였다. 또한, 과거 93개년 홍수사상을 토대로 홍수지속시간과 첨두홍수량, 홍수체적의 상관성을 분석하고, 홍수지속시간이 첨두홍수량, 홍수체적의 함수로 표현되는 회귀식을 도출하여 비엔티안시의 제방계획에 고려될 홍수지속시간을 산정하였다. 마지막으로 본 연구에서는 홍수위험요소를 홍수위험, 홍수노출, 홍수취약성 등 3개의 구성요소로 구분하였고, 각 홍수위험요소별 비엔티안시의 현상태를 정성적으로 평가하여 현재 비엔티안시에 적합한 홍수저감 및 관리방안을 제시하였다.