• Korean Journal of Ecology and Environment
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• v.46 no.3
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• pp.395-408
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• 2013

Environmental condition can induce changes in early life-history traits in order to maximise the ecological fitness. Here I investigated how temperature change and variation in human aquatic activity/behaviour affect early life-history consequences in fish using a dynamic-state-dependent model. In this study, I developed a general fish's life-history model including three life-history states depend-ing on foraging activity, such as body mass, mass of reproductive tissue (i.e., gonadal development) and accumulated stress (i.e., cellular or physiological damage). I assumed the level of foraging activity maximises reproductive success-ultimately, fitness. The model predicts that growth rate, development of reproductive tissues and damage accumulation are greater in higher temperature whereas higher human aquatic activity rapidly reduced the growth rate and development of reproductive tissue and increased damage accumulation. While higher foraging activity in higher temperature is less affected by human aquatic activity, the foraging activity in lower temperature rapidly declined with human aquatic activity. Moreover, lower survival rate in higher temperature or human aquatic activity was independent on mortality rate due to human aquatic activity or mortality rate when foraging activity, respectively. However, the survival rate in lower temperature or human aquatic activity was dependent on these mortality rates. My findings suggest that including of early life-history traits in relation to climate-change and human aquatic activity on the analysis may improve conservation plan and health assessment in aquatic ecosystem.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.241-245
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• 2000

Thick GaN films were grown on (0001) sapphire substrates using the direct reaction gallium and ammonia. The GaN films grew dominantly along [0002] direction, but included the growth of GaN(1010) planeq with V-shaped facetted surfaces at low temperature. With increasing growth temperature, however, the growth of GaN (1010) and (1011) planes was appeared from the films, which gives rise to the growth of hexagonal crystal with pyramid-shaped surface. The growth rate of GaN films increased with increasing growth temperature, but decreased at $1270^{\circ}C$ because the GaN films began to decompose into Ga and N at the temperature. It seemed that the crystal and optical qualities of the GaN films improve with increasing $NH_3$ flow rate. From X-ray diffraction (XRD) and photoluminescence (PL) measurements, it was observed that the yellow luminescence (YL) appeared to be significant as the peak intensity of (1010) plane of XRD spectra increased.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.118-122
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• 2003

Using low pressure metalorganic chemical vapor deposition (MOCVD), we have developed selectively area epitaxy (SAE). Using the developed SAE technology, we have grown AlGaAs/GaAs multi layers and InGaAs/GaAs quantum wire structures on the selectively $SiO_2$ masked GaAs substrates. We have obtained triangular shaped AlGaAs/GaAs and InGaAs/GaAs structures with sharp tips and smooth sidewalls. To rod the optimum conditions, several growth parameters such as growth rate, V/III ratio, growth temperature, and direction of the opening stripes were investigated. The emission peak from quantum wires was observed at 975 nm. With increasing of temperature the emission intensity from side wall quantum wells decreased abruptly. But the intensity from Quantum wires decreased slowly compared to that of side wall quantum wells and it became even stronger from above 50 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.291.1-291.1
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• 2014

산화아연 박막은 아연이 코팅된 테프론 기판 위에 졸-겔 스핀코팅 방법을 이용하여 각기 다른 후열처리 온도에서 제작되었다. 산화아연 박막의 후열처리 온도에 따른 구조적, 광학적 특성은 field emission scanning electron microscopy (FE-SEM), X-ray diffractometer, and photoluminescence spectroscope를 이용하여 분석하였다. 후열처리 온도를 달리하여 성장한 모든 산화아연 박막은 수지상(dendrite) 구조를 가지고 있으며, 이 수지상 구조 위에 약 20 nm의 산화아연 입자들이 성장되었다. 후열처리 온도가 증가함에 따라 c-축 배향성이 우세하게 나타났으며, 인장응력도 증가하였다. 후열처리 온도 $400^{\circ}C$에서 Near-band-edge emission (NBE) 피크는 적색편이(red-shift) 하였고, 후열처리 온도가 증가함에 따라 deep-level emission (DLE) 피크의 세기는 감소하였다. 또한 $400^{\circ}C$의 후열처리 온도에서 NBE 피크의 반치폭(FWHM)이 가장 작았으며, INBE/IDLE의 비율이 가장 높았다. 따라서 $400^{\circ}C$의 후열처리 공정에 의해 결정성 및 광학적 특성이 가장 우수한 산화아연 박막을 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.313-313
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• 2010

AZO 박막 증착에 있어 증착변수간의 상관관계에 대한 연구가 미비하였는데 이번 실험에서는 증착조건 변수 중에서 DC 파워와 온도가 박막성장의 영향과 이들의 상관관계에 대해 알아보고자 한다. 3mtorr의 압력과 150, $230^{\circ}C$의 온도를 각각 가변하는 것과 함께 파워를 1~5 kW까지 가변하였다. $150^{\circ}C$에서 파워를 증가하면 투과도는 향상되나 XRD에서의 상대적 크기는 오히려 감소한 것을 관찰하였다. 하지만 $230^{\circ}C$에서 파워를 증가하면 오히려 투과도가 감소하였다. 위 실험을 통해서 파워가 증가함에 따라 $150^{\circ}C$의 낮은 온도에서 상대적으로 입자의 가속에너지 및 충돌 에너지가 급격히 증가하여 Zn나 Al에 비해 O원자의 물리적 충돌이 늘어남으로써 남은 금속 원자들이 증착되어 투과도 감소와 함께 비저항 증가로 이어졌다. 그러나 $230^{\circ}C$의 상대적으로 높은 온도에서 파워를 가변 하였을 경우, 오히려 O원자의 잦은 충돌과 함께 산소원자의 부족으로 인해 투과도가 감소하며 박막성장을 하는데 있어 결정크기가 오히려 감소하여 비저항을 증가한 것을 알 수 있었다. 이로써 적절한 파워와 온도가 압력과 온도의 상관관계 못지않게 중요한 공정변수가 되며, 박막의 품질을 높이는데 상당한 기여를 하는 것을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.59-65
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• 1999

In this paper, we had studied the possibility of application as Cu thin films from (hfac)Cu(VTMOS) which is very stable. Cu thin films had been studied as a function of deposition temperature. Substrates used in the experiment were PVD TiN on Si wafer. Deposition conditions were as follow : deposition temperature $50^{\circ}C$. Cu thin films were analyzed by AES, four point probe, XRD and SEM. All of deposited films were very pure and some favoring of <111> planes perpendicular to the substrate surface were observed. Cu thin films had two distinct growth rates at various deposition temperature. One is the surface reaction limited region below $200^{\circ}C$, and the other is the mass transport limited region above $200^{\circ}C$. The resistivity of deposited Cu thin films under the optimum deposition condition is $2.5mu\Omega.cm$ Thus, properties of deposited Cu thin films using (hfac)Cu(VTMOS) didn't show difference with Cu thin films from other precursors.

• Microbiology and Biotechnology Letters
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• v.30 no.3
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• pp.258-263
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• 2002

In this study the effects of temperature, pH, and addition of some minerals were investigated in lactic acid fermentation using Enterococcus faecalis RKYI . As a result, strain of RKYl had retained biological activity at the wide range of temperature($34-46^{\circ}C$) and pH(6.0-9.0), and the optimum temperature and pH were $42^{\circ}C$ and 7.0, respectively. When the effect of various phosphate sources added on lactic acid fermentation was studied, di-basic forms of phos-phate(especially, ammonium phosphate and potassium phosphate) had more stimulating effect rather than mono-basic phosphate sources. And there were no perceivable effect of manganese and magnecium salts addition on lactic acid fermentation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.252-257
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• 2000

To investigate the thermal preheating effect of the GaAs substrate exerted on the ZnS epilayers for the first time, ZnS epilayers were grown on the GaAs (100) substrate by hot wall epitaxy. The thermal preheating temperature was $450^{\circ}C$~$660^{\circ}C$. The full width at half maximum values of double crystal rocking curve were the smallest for the ZnS epilayers grown on the GaAs thermally preheated at around both $500^{\circ}C$ and $600^{\circ}C$. However, photoluminescence characteristics of ZnS epilayers were better at $600^{\circ}C$ than at $500^{\circ}C$. Therefore, it was shown that the optimum preheating temperature of the GaAs substrate for the growth of high quality ZnS epilayer was around $600^{\circ}C$. From these experimental results, it was shown that the crystal quality and the PL properties of ZnS epilayers were enhanced for the GaAs substrates thermally preheated at $600^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.374-379
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• 2001

We have investigated the annealing effects on the optical properties of InAs quantum dots(QDs) capped with InGaAs(sample QDl), where InGaAs layer was deposited by opening Gallium, Arsenic, Indium and Arsenic shutters alternately with 3 periods, grown by molecular beam epitaxy. The emission wavelength of the sample of InAs QDs capped by GaAs barriers was observed to be blue-shifted as the annealing temperature was increased. On the other hand, the photoluminescence(PL) peak position of sample QD1 was observed to be red-shifted at the annealing temperature of up to $600^{\circ}C$ and, then, it was found to be blue-shifted at temperatures ranging from 700 to $800^{\circ}C$. The full width at half maximum values of sample QD1 subjected to annealing treatments show different behavior compared to typical InAs quantum dot structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.74-74
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• 2011

최근 새로운 형태의 디스플레이에 관한 관심이 집중되고 있다. 이들 중 특히 투명 산화물 반도체는 기존의 실리콘 기반의 반도체에 비해 가시광 영역에서 높은 투과도를 보이며, 또한 기존의 비정질 실리콘 소자에 비해서 10 cm2/Vs이상의 높은 전하 이동도 값을 가진다. 본 연구에서는 투명 산화물 반도체 소재 중 InGaZnO4를 사용하여 펄스 레이저 방법으로 Al2O3 (0001)기판 위에 비정질 상태인 a-InGaZnO4 박막을 성장 시켰다. 박막의 증착 온도를 변화(RT, $50^{\circ}C$, $150^{\circ}C$, $250^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$)시켜 성장된 박막의 구조적, 화학적, 전기적 그리고 광학적 특성을 조사하였다. 증착 온도가 $450{\sim}550^{\circ}C$ 사이에서 박막의 상태가 비정질(amorphous)에서 polycrystalline으로 성장되는 것을 X-Ray Diffraction과 Field Emission-Scanning Electron Microscope를 이용하여 확인하였고 이는 InGaZnO4 박막의 결정화 온도가 $450^{\circ}C$ 이상임을 알 수 있었다. X-ray Photoelectron Spectroscopy를 통해서 target 물질과 성장된 박막의 조성 및 화학적 상태를 고찰한 결과, 박막의 결정성 변화가 화학적 상태 변화와는 무관하다는 사실을 알 수 있었다. 온도 의존 비저항 측정을 통해 박막이 반도체 성향을 가지는 것을 확인 하였다. 또한 Hall 측정 결과 증착 온도가 올라 갈수록 전하 밀도는 증가 하지만, 전하 이동도는 다결정 박막($550^{\circ}C$)에서 급격히 감소하고, 이로 인해 비저항 값이 크게 증가함을 알 수 있었다. 이는 다결정 박막 내 존재하는 grain boundary들이 이동도 값에 영향을 준다는 것으로 추측할 수 있다. Ultra violet-Visible-Near Infrared 측정을 통해 가시광 영역에서 80%이상의 투과율을 나타내며 증착 온도가 증가함에 따라 에너지 밴드갭(Eg)이 커지는 것을 확인 할 수 있는데 이는 Hall 측정 결과에서 확인한 전하 밀도의 증가로 인해 에너지 밴드갭이 커지는 Burstein-Moss 효과로 설명할 수 있다.