• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.1-6
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• 2013

In this paper, to develop linear source for evaporating $600{\times}1,200mm$ size of large area CIGS absorber layer, we simulated linear thermal source and obtained ${\pm}5%$ thickness uniformity with various nozzle sizes and regular nozzle distance. Flux density was confirmed linear source length. Using this linear source, we tested thickness uniformity of Copper, Indium single layer which was obtained Cu ${\pm}5%$ and In ${\pm}5%$ thickness uniformity. And then CIGS absorber layers were evaporated with In-line single-stage co-evaporation. Large area CIGS absorber layers were confirmed composition uniformity of $$Cu{\leq_-}5%$$, $$In{\leq_-}7%$$, $$Ga{\leq_-}4%$$, $$Se{\leq_-}3%$$ with 600 mm width by XRF. Uniform shape of CIGS absorber layers was confirmed by SEM. XRD showed peaks which indicate chalcopyrite structure of CIGS absorber layers. Thus, developed linear source is suitable for evaporating CIGS absorber layer.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.27-36
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• 2006

We fabricated thermally evaporated 10 nm-Ni/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si and 10 nm-Ni/l nm-Pt/(poly)Si films to investigate the thermal stability of nickel monosilicides at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides of 50 nm-thick were formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to examine sheet resistance. A scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An X-ray diffractometer and an Auger depth profiler were used for phase and composition analysis, respectively. Nickel silicides with platinum have no effect on widening the NiSi stabilization temperature region. Nickel silicides with iridium farmed on single crystal silicon showed a low resistance up to $1200^{\circ}C$ while the ones formed on polycrystalline silicon substrate showed low resistance up to $850^{\circ}C$. The grain boundary diffusion and agglomeration of silicides lowered the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• Polymer(Korea)
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• v.35 no.5
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• pp.438-443
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• 2011

In order to enhance water permeability through the improvement of fouling phenomena and wettability of hydrophobic porous membranes, various adsorption materials, i.e., poly(vinyl amine), poly (styrene sulfonic acid), poly(vinyl sulfonic acid), and poly(acrylamide-co-acrylic acid) were adsorbed onto the surface of polyethylene (PE) porous membrane. The concentration of adsorption solutions, adsorption time, the sort of salts and their ionic strength were varied, and the pure water permeability of their resulting adsorbed membranes was measured. In general, water permeability increased with an initial increase in the concentration of adsorption solution, adsorption time, and ionic strength and then decreased with a further increase. The pure water permeability of 375 $L/m^2h$(LMH), 35% enhancement, was obtained at a condition of poly(vinyl sulfonic acid) 1000 ppm, $Mg(NO_3)_2$ ionic strength(IS) 0.1, and adsorption time 150 sec, while the 50% (411 LMH) and 35% (374 LMH) enhancements were obtained at conditions of poly(styrene sulfonic acid) 1000 ppm, adsorption time 60 sec, and NaCl IS 0.1 and 0.2, respectively.

• Membrane Journal
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• v.26 no.3
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• pp.197-204
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• 2016

The objective of this work was to investigate the performance of pervaporation process for recovery of ester compounds from model aqueous solutions and how the fluxes of esters and water were affected by changes in feed concentration and temperature. The flux of ethyl acetate (EA), propyl acetate (PA), ethyl propionate (EP), butyl acetate (BA), and ethyl butyrate (EB) increased with an increase in feed concentration from 0.15 wt% to 0.60 wt%, and increased with temperature change from $30^{\circ}C$ to $50^{\circ}C$. The flux of esters (EA, PA, EP, BA, and EB) was in order of (EA) < (PA, EP) < (BA, EB). This result meant that the flux strongly depended on affinity between esters and membrane surface; EA is the least hydrophobic because it has one hydrophobic function group ($-CH_2-$), (PA, EP) have two ($-CH_2-$), and (BA, EB) are the most hydrophobic because these have three ($-CH_2-$). As well as such an influence of hydrophobicity of ester molecules on ester flux, the influence of hydrophobicity of membrane surface on ester flux needs further investigation. With increase in temperature, water flux of aqueous EA, PA, EP, BA, and EB solution increased. However, water flux of aqueous ester solutions did not change appreciably with increase in concentration. This experimental results may be used as fundamental data for pervaporation (PV) to improve the aroma recovery process as an alternative to thermal evaporation and distillation processes.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.214-214
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• 1999

다이아몬드를 반도체용 열방산용기판 등으로 사용하기 위해서는 수백 $\mu\textrm{m}$ 두께의 대면적 웨이퍼가 요구된다. 이를 위해서 DC are jet CVD, MW PACVD, DC PACVD 등이 개발되어, 현재 4"에서 8"까지의 많은 문제를 일으키고 있다. 본 연구에서는 multi-cathode DC PACVD법에 의한 4" 다이아몬드 웨이퍼의 합성과 합성된 막의 특성변화에 대한 연구를 수행하였다. 또한, 웨이퍼의 휨과 crack 발생거동과 대한 고찰을 통래 휨과 crack이 없는 웨이퍼의 제작방법을 고안하였다. 사용된 음극의 수는 일곱 개이며, 투입된 power는 각 음극 당 약 2.5kW(4.1 A-600V)이었다. 사용된 기판의 크기는 직경 4"이었다. 합성압력은 100Torr, 가스유량은 150sccm, 증착온도는 125$0^{\circ}C$~131$0^{\circ}C$, 수소가스네 메탄조성은 5%~8%이었다. 합성 중 막에 인가되는 응력은 합성 중 증착온도의 변화에 의해 제어하였다. 막의 결정도는 Raman spectroscopy 및 열전도도를 측정을 통해 분석하였다. 성장속도 및 다이아몬드 peak의 반가폭은 메탄조성 증가(5%~8%)에 따라 증가하여 각각 6.6~10.5$\mu\textrm{m}$/h 및 3.8~5.2 cm-1의 분포를 보였다. 6%CH4 및 7%CH4에서 합성된 웨이퍼에서 측정된 막의 열전도도는 11W/cmK~13W/cmK 정도로 높게 나타났다. 막두께의 uniformity는 최대 3.5%로 매우 균일하였다. 막에 인가되는 응력의 제어로 직경 4"k 합성면적에서 두께 1mm 이상의 균열 및 휨이 없는 다이아몬드 자유막 웨이퍼를 합성할 수 있었다.다이아몬드 자유막 웨이퍼를 합성할 수 있었다.active ion에 의해 sputtering 이 된다. 이때 plasma 처리기의 polymer 기판 후면에 magnet를 설치하여 높은 ionization을 발생시켜 처리 효과를 한층 높여 주었다. 이 plasma 처리는 표면 청정화, 표면 etching 이 동시에 행하는 것과 함께 장시간 처리에 의해 표면에서는 미세한 과, C=C기, -C-O-의 극성기의 도입에 의한 표면 개량이 된다는 것을 관찰할 수 있다. OPP polymer 표면을 Ar 100%로 plasma 처리한 경우 C-O, C=O 등의 carbonyl가 발생됨을 알 수 있었다. C-O, C=O 등의 carbynyl polor group이 도입됨에 따라 sputter된 Al의 접착력이 향상됨을 알 수 있으며, TEM 관찰 결과 grain size도 상당히 작아짐을 알 수 있었다.onte-Carlo 방법으로 처리하였다. 정지기장해석의 경우 상용 S/W인 Vector Fields를 사용하였다. 이를 통해 sputter 내 플라즈마 특성, target으로 입사하는 이온에너지 및 각 분포, 이들이 target erosion 형상에 미치는 영향을 살펴보았다. 또한 이들 결과로부터 간단한 sputtering 모델을 사용하여 target으로부터 sputter된 입자들이 substrate에 부착되는 현상을 Monte-Carlo 방법으로 추적하여 성막특성도 살펴보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.726-732
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• 2007

We fabricated UV absorption functional $10{\sim}50nm-TiO_{2-x}/quartz$ structures layer using ALD (atomic layer deposition) method. We deposited $10nm-TiO_{2-x}$ layer on quartz substrate using ALD, and film thickness was determined by an ellipsometer. The others specimen thickness was controlled by ALD time lineally. We characterized controlling phase UV and visible optical property using an X-ray difractometer, a UV-VIS-IR spectrometer and a digital camera. $ALD-TiO_{2-x}$ layers were non-stoichiometric $TiO_{2-x}$ form and amorphous phases comparing with bulk $TiO_2$. While the conventional bulk $TiO_2$ had band gap of $3.0{\sim}3.2eV$ resulting in absorption edges at 380 nm and 415 nm, $ALD-TiO_{2-x}$ layers showed absorption edges at 197 nm and 250 nm. Therefore, our nano-thick $ALD-TiO_{2-x}$ was able to absorb shorter UV region and showed excellent transmittance in visible region. Our result implies that our newly proposed nano-thick $TiO_{2-x}$ using ALD process may improve transmittance in visible rays and be able to absorb shorter UV light effectively.

• Membrane Journal
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• v.22 no.1
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• pp.46-53
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• 2012

Low-temperature carbon dioxide stripping by a vacuum membrane stripping technology was studied as a substitute for the stripping process in a conventional aqueous amine process. Composite membranes with $5{\mu}m$ thickness of PDMS (polydimethylsiloxane) dense layer on a PE (polyethylene) support layer were prepared by a casting method and used as a membrane contactor for $CO_2$ stripping. Aqueous amine solutions of 30 wt% MEA (monoethanolamine) were used as absorbents. $CO_2$ flux was examined under various operating conditions by varying the vacuum pressure (60~360 mmHg (abs.)), stripping temperature ($25{\sim}80^{\circ}C$), $CO_2$ loading (0.5~0.7). $CO_2$ stripping flux increased with increasing temperature and $CO_2$ loading as well as decreasing vacuum pressure. PDMS-PE composite membrane has stability for vacuum stripping process compared with PTFE porous membrane.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.