• Korean Journal of Optics and Photonics
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• v.20 no.6
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• pp.334-338
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• 2009

Recently, with increasing demand for flat-panel display product, methods for large area patterning are required. TIR (total internal reflection) holographic photo-lithography isstudied as one of the methods of large area lithography. In conventional TIR holography, light sources for hologram recording and image reconstruction are coherent beams such as laser beams. If the image is reconstructed with an incoherent light source such a UV lamp, the image noise from the coherence of light will be reduced and the UV lamp will be a better light source for large area exposure. We analyzed the effect of spectral bandwidth and angular bandwidth of the light source in image reconstruction and verified image blurring with experiments. For large area patterning which has micro-scale line width, it is expected that TIR holographic photo lithography by UV lamp will become a low-noise and low-priced technique.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.77-81
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• 2017

The rotatable anisotropy effect was observed in the ferromagnetic resonance measurement in exchange coupled ferromagnetic/antiferromagnetic thin films and it was due to rotation of antiferromagnetic layer by the exchange coupling energy. We analyzed the CoFe thickness dependence of rotatable anisotropy field and ferromagnetic resonance linewidth in exchange coupled $CoFe(t_F)/MnIr(2.5nm)$ thin films. The rotatable anisotropy field was inversely propositional to the CoFe thickness and it was well fitted by the rotatable anisotropy energy of $0.96erg/cm^2$. The ferromagnetic resonance linewidth were linearly propositional to the rotatable anisotropy field in $t_F$ < 50 nm, while it was more dominated by the eddy current effect in $t_F$ > 50 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.12.2-12.2
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• 2009

전자 디스플레이 산업의 중요성과 미래사회에서 요구되는 정보기기로써 유연한 기판을 사용한 소자에 대한 수요가 급격히 증가하고 있으며, 이들 산업에 응용되기 위해서는 저비용, 고생산 공정이 요구되고 있다. 이를 위해 인쇄전자 기술에 대한 연구가 활발히 진행되고 있다. 특히, 금속배선은 모든 소자의 기본이면서 낮은 저항과 높은 신뢰성을 동시에 요구하고 있어 인쇄전자 기술이 해결해야 할 가장 어려운 난제 중의 하나이다. 따라서 본 연구에서는 낮은 저항과 높은 신뢰성을 만족시킬 수 있는 새로운 금속배선 공정으로서 폴리이미드 필름을 초발수 처리한 후 친수 패턴을 하여 전도성 잉크에 함침함으로서 친수 패턴을 따라 금속배선이 이루어 지도록 하는 방법을 제안하고자 한다. 폴리이미드 필름의 표면을 플라즈마 처리하여 표면에 나노돌기를 형성시키고 불소기를 함유한 코팅층을 형성시킴으로써 물에 대한 접촉각이 $150^{\circ}$이상이 되도록 초발수 처리할 수 있었다. 초발수 처리된 폴리이미드 기판에 쉐도우 마스크를 사용하여 UV조사함으로써 조사된 부분만 친수성을 가지는 패턴을 형성하였다. 이렇게 친수 패턴이 제작된 초발수 폴리이미드 유연기판을 실버잉크에 함침함으로써 선폭 $200{\mu}m$를 가지는 금속배선을 형성시켰다. 형성된 금속배선의 단면 형상을 측정하였으며, 열처리를 통하여 비저항이 $30{\mu}{\Omega}$-cm를 얻을 수 있었다. 통상 1회의 함침으로는 금속배선의 두께가 150nm정도로 금속배선으로 사용하기에는 얇아 배선의 두께를 증가시키기 위하여 수 회 함침을 시도하여 $2{\mu}m$의 두께로 증가시킬 수 있었다. 이때 선폭과 선간 간격은 크게 변하지 않고 두께만 증가시킬 수 있었다. 이는 금속배선을 형성한 후에도 폴리이미드 유연기판의 초발수성은 그대로 유지되어 여러번 함침할 때 잉크가 이미 형성된 배선에만 묻게 되어 두께는 증가하나 선폭과 선간 간격은 증가하지 않는 것으로 판단된다. 사용한 실버잉크는 실버의 함량은 10~20wt%인 수계 잉크였다.

• Korean Journal of Optics and Photonics
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• v.32 no.4
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• pp.187-194
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• 2021

This paper presents a study of laser output characteristics. We fabricated a MOPA (master oscillator power amplifier)-type high-power, narrowbandwidth fiber laser with a bidirectional pumping configuration in its main amplifier. As signal beams, light sources with bandwidths of 3 GHz and 10 GHz-phase-modulated through a PRBS (pseudo-random binary sequence)-were used interchangeably. Furthermore, the characteristics of the SBS (stimulated Brillouin scattering) were analyzed using a signal beam with 3 GHz bandwidth, by adjusting the forward to backward pumppower ratio. Moreover, the characteristics of the transverse mode instability were analyzed by adjusting the forward to backward pump-power ratio, using a signal beam with 10-GHz bandwidth. Finally, the output power from 10 GHz bandwidth was amplified to more than 1 kW using a forward to backward pump-power ratio of 1.6. The beam quality M² was measured to be approximately 1.36, and the optical-to-optical efficiency was 80% at maximum output power.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Mineralogical Society of Korea
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• v.21 no.4
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• pp.435-442
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• 2008

Natural, synthetic, and treated diamonds were studied by NMR and EPR. It was demonstrated that natural and synthetic diamonds, treated and non-treated diamonds, high pressure high temperature (HPHT) treated and electron beam treated diamonds could be distinguished among each other based on the $^{13}C$ NMR spectra acquired for relatively short periods of 100 minutes. The $^{13}C$ NMR linewidths of gem quality synthetic diamonds were broader than 1.6 ppm due to the paramagentic effects of transition metals, generally used as catalysts, while the linewidths of gem quality natural diamonds were narrower than 0.5 ppm regardless of the methods of treatment. The linewidth (0.5 ppm) for a HPHT treated, gem quality natural diamond was as broad as more than twice of the linewidth (0.2 ppm) of an electron beam treated diamond. The $^{13}C$ NMR signal intensities of treated, gem quality natural diamonds were as strong as more than 10 times of the intensities of non-treated, gem quality natural diamonds. When correlated with the concentrations of the paramagnetic defects (electrons) obtained from the EPR spectra, the relative $^{13}C$ NMR signal intensities increased in proportion to the concentrations of the paramagnetic electrons contained in each sample but the electron beam treated diamond was an exception. This suggested that the lattice component, in addition to the paramagnetic defect component, should also be considered in determining the $^{13}C$ NMR signal intensity of the electron beam treated diamond.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.7-11
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• 1994

Ferromagnetic resonance experiment was performed to study the variations of micromagnetic structure with heat treatment of melt spun $Fe_{76}Cu_{1}Nb_{3}Si_{14}B_{6}$ alloy for 1h at every $50^{\circ}C$ in the temperature range of $400^{\circ}C-700^{\circ}C$. The variations of micromagnetic structure was discussed qualitatively in terms of the variations of line width ${\Delta}H_{p-p}$ and resonance magnetic field $H_{res}$. With increasing armealing temperature to $400^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from structural relaxation during heat treatment. With increasing annealing temperature from 400 to $500^{\circ}C$, ${\Delta}H_{p-p}$ increases and $H_{res}$ decreases due to the increase in magnetic anisotropy resulting from the formation of nanocrystalline particles embedded in an amorphous matrix. With increasing armealing temperature from 500 to $550^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from the formation of homogeneous nanocrystalline structure with a minor amorphous phase. Further increase in armealing temperature above $550^{\circ}C$ C causes ${\Delta}H_{p-p}$ to increase and $H_{res}$ to decrease due to the increase in magnetic anisotropy due to the formation of inhomogeneous grain structure and intermetallic compounds.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.210.1-210.1
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.597-598
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.82-82
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• 2009