• 전기의세계
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• v.25 no.6
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• pp.29-30
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• 1976

종래의 고압수은램프의 결점인 광색 및 연색성을 개선한 것이며 고압수은방전등의 석영발광관내에 각종 금속할로겐화합물을 봉입한 것이 메탈하라이드램프이다. 근래의 연구결과로 발광효율의 대폭적인 향상이 이루어지고 있다. 메탈하라이드램프를 크게 나누면 양광램프, 고효율 하라이드램프, 형광 고효율 하라이드램프 등으로 된다. 메탈하라이드램프는 경질유리외관내에 석영발광관을 봉착시킨 고압방전등으로 종래의 수은램프와 외관상 근사하지만 발광물질로서 금속할로겐화합물이 봉입되어 있으므로 램프설계에 있어서는 여러가지 배료가 이루워저야 한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.238-244
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• 1994

We investigated solution growth of silicon on borosilicate and quartz glass substrates in the temperature range of $800^{\circ}C~520^{\circ}C$. A thin Al-Si layer evaporated onto the substrate serves to improve the wetting between the substrate and the Al/Ga solvent. Nucleation takes place by a reaction of Al with $SiO_2$ from the substrate. We obtained silicon deposits with a grain size up to a few 100 $\mu\textrm{m}$. There was a perferential (111) orientation for the case of quartz glass substrates while there is a strong contribution of other orientations for the deposition of Si on borosilicate glass substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.91-96
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• 2023

To verify the quality of bubbles during the use of quartz glass crucibles (QC), an appropriate accelerated testing method was proposed. The bubble state of discarded waste crucibles obtained from actual Czochralski (Cz) processes was analyzed, and optimal heat treatment conditions were suggested by varying temperature, pressure, and time using the QC test piece. By subjecting the samples to heat treatment at 1450℃, 0.4 Torr, and 40 hours, it was possible to control the bubble size and density to a similar level as those generated in the actual Cz process. In particular, by selecting a relatively lower pressure of 0.4 Torr compared to the typical range of 10~20 Torr applied in the Cz process, the time required for accelerated bubble formation testing could be reduced. However, it was determined that increasing the heat treatment temperature to 1550℃ led to the phenomenon of Ostwald ripening, resulting in larger bubbles and a rapid decrease in density. Therefore, it was concluded that it was not a suitable condition for the desired b ake test.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.147-147
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• 2003

탄소/탄소 복합체의 내산화 코팅을 위하여 산화티탄, 산화알루미늄, 산화이트륨 등을 포함하는 여러 가지 인산염계 유리를 제조하였다. 유리 산화물조성 몰비는 인산에 대하여 인산알루미늄을 15몰%, 30몰%, 45몰%로 하였고 산화티탄은 70몰%, 산화 이트륨은 25몰%이 되도록 코팅 액을 제조하였다. 제조 된 코팅액은 석영 도가니에서 열처리 하여 급냉 시켰으며, 급냉 시키고 다시 130$0^{\circ}C$, 1시간 동안 열처리하여 유리를 제조하였다. 제조된 유리의 열중량, 열팽창율, 열전도도를 분석하여 탄소 복합체와의 적합성을 조사하고, 내산화성 시험을 위해 탄소/탄소 복합체에 코팅액을 도포하여 산화 감량 비율을 측정하였다. 엑스선 회절분석기와 적외선 분광기를 통하여 인산염 유리의 구조분석을 실시하고 비커스 미세 경도 시험기를 이용하여 기계적 물성을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.167-167
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• 2010

Ge-Sb-Se계 칼코게나이드 유리의 Melting 조건변화에 따른 특성변화를 연구하였다. Glass melting 조건(homogenization-temperature, homogenization-time, annealing) 에 따라 제작된 칼코게나이드 유리 bulk를 FT-IR, XRD, SEM 등의 분석장비를 이용하여 특성을 분석하였다. Homogenization temperature가 높을수록 석영관 급냉 시 발생되는 mechanical stress와 내부응력차로 인해 칼코게나이드 유리 깨짐현상이 증가하였으며 조성비와 melting 조건에 따라 XRD분석에서 확인되지 않는 미소결정이 SEM 분석결과 관찰되었다. 본 연구를 통해 칼코게나이드 유리의 melting 조건에 따른 경향성을 확인할 수 있었다.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.871-875
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• 1998

High aspect ratio microstructures were fabricated by photolithography. The material for the microstructure was photosensitive glass which has good mechanical and electrical insulation properties. The photosensitive glass was exposed to ultraviolet light at 312nm through a chromium mask in which the structures are drawn. After heat treatment process over $500^{\circ}C$, the photosensitive glass was etched in a 10% hydrofluoric acid solution with ultrasonic conditions. Final dimension of the micro-framework was greatly dependent on the thickness of photosensitive glass, mask pattern, ultraviolet light exposure and etching conditions. The maximum aspect ratio of the micro-framework obtained from this work was over 30.

• Journal of Powder Materials
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• v.20 no.2
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• pp.134-137
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• 2013

The quartz glasses were prepared by fumed silica powders sintering method at $1210^{\circ}C$, $1230^{\circ}C$, $1250^{\circ}C$ in air and the effect of sintering temperature on their properties were investigated. The X-ray diffraction pattern, the OH concentration, the light transmittance, the apparent porosity and the density were analyzed. The transparent quartz glass were obtained above $1230^{\circ}C$. The OH-group and macroscopic pores were removed above $1230^{\circ}C$ and highest density and light transmittance were obtained at $1250^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.33-38
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• 2007

Quartz glass panel was prepared by a colloidal silica through the heat-treatment only without any additives in wet-chemical method. This colloidal silica used in slurry process has the uniform distribution of particle size and lower cost. The results show that 6N as a degree of purity and the 86 percentage of violet transmittance in 1mm thickness. AFM(Atomic Force Microscopy) pattern shows that the surface roughness are less than lnm. Also, we investigated the characteristic of quartz panel according to the concentration and distribution of hydroxyl group, viscosity and thermal expansion coefficient.

• Ceramist
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• v.22 no.4
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• pp.429-451
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• 2019

Quartz glass is a key material for making semiconductor process components because of its purity, low thermal expansion, high UV transmittance and relatively low cost. Domestic quartz glass has a market worth about 500 billion won in 2018, and the market power of Japanese materials is very high. Quartz glass for semiconductor process can be divided into general process and exposure. For general process, molten quartz glass is mainly used, but synthetic quartz glass with higher purity is preferred. Synthetic quartz glass is used as the photomask for the exposure process. Recently, as semiconductors started the sub-nm process, the transition from the transmission type using ArF ultraviolet (194 nm) to the reflection type using EUV ultraviolet (13.5 nm) began. Therefore, the characteristics required for the synthetic quartz glass substrates used so far are also rapidly changing. This article summarizes the current technical trends of quartz glass and recent technical issues. Lastly, the present situation and development possibility of quartz glass technology in Korea were diagnosed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.131-138
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• 2024

In this study, the microstructure and plasma resistance characteristics of 35Bi₂O₃-15Al₂O₃-50SiO₂ (BiAl SiO) and 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃ (BiAlSiOF) glass layers coated on sintered alumina substrates were investigated according to the sintering conditions. The coated layers were formed using the bar coating method and then sintered at a temperature in the range of 700~900℃, which corresponds to the temperature before and after the hemisphere forming temperature, after a debinding process. The plasma resistance of the two coated glasses was approximately 2~3 times higher than that of the quartz glass, and in particular, the BiAlSiOF glass film with F added showed higher plasma resistance than BiAlSiO. It is thought to be due to the effect of suppressing the reaction with fluorine gas by adding fluorine to the glass. When the sintering time was increased at 700℃ and 800℃, the plasma resistance of both glasses improved, but when the sintering temperature was increased to 900℃, the plasma resistance decreased again (i.e., the etching rate increased). This phenomenon is thought to be related to the crystallization behavior of both glasses. The change in plasma resistance depending on the sintering conditions is thought to be related to the appearance of Al and Bi-rich phases.