• Title/Summary/Keyword: 상향주파수변환기

Search Result 5, Processing Time 0.022 seconds

BUC Design and Fabrication for Flyaway Satellite Terminal (운반형 위성단말 고출력 상향 주파수변환기 설계 및 제작)

  • Kim, Joo-Yeon;Shin, Kwan-Ho
    • Journal of IKEEE
    • /
    • v.24 no.1
    • /
    • pp.72-80
    • /
    • 2020
  • This paper describes the design and fabrication of a BUC(Block Up-converter) which is a component of a FST (Flyaway Satellite Terminal), one of the ET(Earth Terminal) of the military satellite. BUC is physically composed of an up-converter module, a high power amplifier module, a receive band suppression filter, a housing, and a cable assembly. It was designed using simulator AWR to satisfy the electrical characteristics of BUC's such as maximum output power, gain, unwanted signal, and intermodulation. The maximum output power and gain characteristics were measured at 43.4dBm and 51.8dB, respectively. The unwanted wave and intermodulation characteristics were -73.5dBc and -31.9dBc, respectively. Of the electrical requirements of Table 1, not only the above four but also all of the items were confirmed to be satisfied.

A 0.13-μm CMOS RF Front-End Transmitter For LTE-Advanced Systems (LTE-Advanced 표준을 지원하는 0.13-μm CMOS RF Front-end transmitter 설계)

  • Kim, Jong-Myeong;Kim, Chang-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.16 no.5
    • /
    • pp.1009-1014
    • /
    • 2012
  • This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13-${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

The Study on the Design and Implementation of SHF band Upconverter of Digital Satellite Communication (디지털위성중계기용 SHF 대역 상향주파수 변환장치 설계 및 구현에 대한 연구)

  • Kim, Ki-Jung
    • The Journal of the Korea institute of electronic communication sciences
    • /
    • v.12 no.2
    • /
    • pp.261-266
    • /
    • 2017
  • This study describes the design and implementation of SHF band Upconverter Digital Satellite Communication. The SHF band Upconverter unit consists of PLDROand frequency converter. In frequency converter, microstripBPF and LPF designed through the pre EMsimulation are implemented to minimize the unwanted spurious in frequency converter. Through the pre-simulation analysis ofspace environment, the possibility of and minimized about the malfunction of equipment and we designed a reliable SHF band Upconverter through simulation for a TID according to the vibration generated during the launch and space radiation environment, and compared pre-simulation of main performance results to test results about main performances of SHF band Upconverter after production.

A $0.13-{\mu}m$ CMOS RF Front-End Transmitter for LTE-Advanced Systems (LTE-Advanced 표준을 지원하는 $0.13-{\mu}m$ CMOS RF Front-End 송신기 설계)

  • Kim, Jong-Myeong;Lee, Kyoung-Wook;Park, Min-Kyung;Choi, Yun-Ho;Jung, Jae-Ho;Kim, Chang-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2011.10a
    • /
    • pp.402-403
    • /
    • 2011
  • This paper has proposed a $0.13-{\mu}m$ CMOS RF Front-end transmitter for LTE-Advanced systems. The proposed RF Front-end supports a band 7 (from 2500 MHz to 2570 MHz) in E-UTRA of 3GPP. It can provide a maximum output power level of +10 dBm but it's a normal output power level is +0 dBm considering a low PAPR. The post-layout simulation results show that the quadrature up-conversion mixer and a driver amplifier consumes 14 mA and 28 mA from a 1.2 V supply voltage respectively, while providing a output power level of 0 dBm at the input power level of -13 dBm.

  • PDF

A Dual-Band Transmitter RF Front-End for IMT-Advanced system in 0.13-μm CMOS Technology (IMT-Advanced 표준을 지원하는 이중대역 0.13-μm CMOS 송신기 RF Front-End 설계)

  • Shin, Sang-Woon;Seo, Yong-Ho;Kim, Chang-Wan
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.15 no.2
    • /
    • pp.273-278
    • /
    • 2011
  • This paper has proposed a dual-band transmitter RF Front-end for IMT-Advanced systems which has been implemented in a 0.13-${\mu}m$ CMOS technology. The proposed dual-band transmitter RF Front-End covers 2300~2700 MHz, 3300~3800 MHz frequency ranges which support 802.11, Mobile WiMAX, and IMT-Advanced system. The proposed dual-band transmitter RF Front-End consumes 45 mA from a 1.2 V supply voltage. The performances of the transmitter RF Front-End are verified through post-layout simulations. The simulation results show a +0 dBm output power at 2 GHz band, and +1.3 dBm output power at 3 GHz band.