• Journal of Korean Society of Environmental Engineers
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• v.34 no.6
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• pp.391-396
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• 2012

The destruction study of $NF_3$ gas emitted from the semiconductor industry is performed with electron-beam technology. Absorbed dose (kGy) and current ranged from 0 (0) to 400 kGy (20 mA). The concentration of $NF_3$ gas ranged from 500 to 2,000 ppm. In order to assess the effect of a residence time on DRE (Destruction and Removal Efficiency, %), experiments also conducted at different irridiation times of 5 sec, 10 sec, 15 sec and 20 sec respectively. As absorbed dose and current increased, DRE of $NF_3$ was also increased. However, DRE (%) of $NF_3$ decreased with increasing the concentration of $NF_3$ gas. The DRE of $NF_3$ was about 90% at an absorbed dose of 400 kGy.

• Membrane Journal
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• v.23 no.3
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• pp.189-203
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• 2013

F-gases, gases containing fluorine such as perfluorocarbons (PFCs), sulfurhexafluoride ($SF_6$), nitrogen trifluoride ($NF_3$) are known to have green house effects. Although the net emission rates of gases containing fluorine are much lower than those of $CO_2$, their contribution to global warming cannot be ignored because of their extremely high global warming potential (GWP). F-gases mainly have been used for a variaty of applications in the semiconductor/LCD processes and in the electric power distribution industry of the national key industry. One of practical solutions of controlling the emission rates of F-gases is to reuse by separation and recovery of F-gases of low concentration from the gases mixtures with nitrogen or air. This work investigates some methods for F-gases recovery and separation around the membrane-based process.