• Title/Summary/Keyword: 산화규소

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A Study on the Bond Strength of BCB-bonded Wafers (BCB 수지로 본딩한 웨이퍼의 본딩 결합력에 관한 연구)

  • Kwon, Yongchai;Seok, Jongwon;Lu, Jian-Qiang;Cale, Timothy;Gutmann, Ronald
    • Korean Chemical Engineering Research
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    • v.45 no.5
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    • pp.479-486
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    • 2007
  • Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.

Fabrication of FBAR (SMR) using Reflector (반사층을 이용한 FBAR(SMR)의 제조)

  • Lee, Jae-Bin;Kwak, Sang-Hyon;Kim, Hyeong-Joon;Park, Hee-Dae;Kim, Young-Sik
    • Korean Journal of Materials Research
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    • v.9 no.12
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    • pp.1263-1269
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    • 1999
  • An FBAR(Solidly Mounted Resonator) was fabricated using reflector layers which prohibit the penetration of bulk acoustic wave into substrate. The SMR consisted of top and bottom electrodes(Al films), a piezoelectric layer (ZnO film), reflector layers(W/$Si_2$ films) and Si substrate. The electrodes were deposited by dc sputtering. The piezoelectric layer and the reflector layers were deposited by rf magnetron sputtering. The control of crystallinity, microstructures and electric properties of each layer was essential for attaining the optimum FBAR characteristics. Under the best deposition conditions for FBAR devices, the ZnO films had highly c-axis preferred orientation(${\sigma}=2.17^{\circ}$), resistivity of $10^4\;{\omega}cm$, and surface roughness of 10.6 ${\AA}$. On the other hand, the surface roughness of W and $Si_2$ films was 16 ${\AA}$ and 33 ${\AA}$, respectively, and the resistivity of Al film was $5.1{\times}10^{-6}\;{\Omega}cm$. The SMR devices were fabricated by the conventional semiconductor processes. In the resonance conditions of the SMR, the series resonance frequency (fs) and the parallel resonance frequency(fp) were 1.244 GHz and 1.251 GHz, respectively and the quality factor(Q) was 1200.

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Studies of Refractive Index and Hardness from the structures in Quarternary Li2O-B2O3-Al2O3-SiO2 Glasses (4성분 Li2O-B2O3-Al2O3-SiO2 유리들의 구조로부터 굴절률과 경도 연구)

  • Moon, Seong-Jun
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.27-31
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    • 2002
  • Quarternary $Li_2O-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated by the function of $R({\equiv}Li_2Omole%/B_2O_3mole%)$ and $K({\equiv}(Al_2O_3mole%+SiO_2mole%/B_2O_3mole%)$. The structures of these glasses were investigated through refractive index and Vicker's hardness. The refractive index increased as the increase of the polarizability in the glass network. In the region of low $Li_2O$ content, the refractive index increased due to the increase of the polarizability in the glass network but, in the region of high $Li_2O$ content, the rate of increase of the refractive index decreased due to the increase of the molar volume caused by the formation of $BO_3{^-}$ units with relatively high molar volume. And, the refractive index decreased as the increase of $Al_2O_3+SiO_2$ content with the molar volume in the glass network. The increase and decrease of vicker's hardness values for those glasses depended on the fraction of tetrahedral $BO_4$ units and it of triangle $BO_3{^-}$ units with non-bridging oxygen, respectively.

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Studies of Refractive Index and Hardness In Quarternary NaBAISi Glasses (4성분 NaBAISi 유리계의 굴절률과 경도 연구)

  • Moon, Seong-Jun;Hwang, In-Sun
    • Journal of Korean Ophthalmic Optics Society
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    • v.8 no.1
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    • pp.1-5
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    • 2003
  • Quarternary $Na_2O-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated by the function of $R({\equiv}Na_2O\;mole%/B_2O_3\;mole%)$ and $K({\equiv}(Al_2O_3\;mole%+SiO_2\;mole%)/B_2O_3mole%)$. The structures of these glasses were investigated through refractive index and vicker's hardness. The refractive index increased as the increase of the polarizability in the glass network. In the region of low $Na_2O$ content, the refractive index increased due to the increase of the polarizability in the glass network, but in the region of high $Na_2O$ content, the rate of increase of the refractive index decreased due to the increase of the molar volume caused by the formation of $BO_3{^-}$ units with relatively high molar volume. And, the refractive index decreased as the increase of $Al_2O_3+SiO_2$ content with the molar volume in the glass network. The increase and decrease of vicker's hardness values for those glasses depended on the fraction of tetrahedral $BO_4$ units and it of triangle $BO_3{^-}$ units with non-bridging oxygen, respectively.

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A Study on Improvement of Recycling Process of Waste Fluorescent Lamps (폐형광등 재활용 공정의 개선 연구)

  • Lee, Gee Hun;Lee, Dong Hoon;Song, Young Jun;Kim, Chang Kwon
    • Resources Recycling
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    • v.29 no.3
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    • pp.61-74
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    • 2020
  • This study was conducted to improve the recycling process of waste fluorescent lamp, and investigate the possibility of using the waste fluorescent lamp glass as a raw material for glass beads, the leaching method of rare earth from the waste phosphor powder, and the possibility of solvent extraction of rare earth from the rare earth leaching solution. The waste phosphor contained 28.9% yttrium oxide, 3.46% cerium oxide, 1.95% europium oxide, 1.76% terbium oxide, and 1.43% lanthanum oxide. As a result of the trial production of glass beads using waste fluorescent lamp glass, it was judged that the production yield and quality were excellent, so that waste fluorescent lamp glass could be used as a raw material for glass beads. The soda roasted waste phosphor was leached in water and thereby the aqueous solution was blown with CO2 to drop the pH to about 7, Then, Al, Si and residual N2CO3 were dissolved, and NaAlCO3(OH)2 and SiO2 were precipitated in the aqueous solution. In the solvent extraction of cyanex272-hydrochloric acid, cyanex272-sulfuric acid, D2EHPA-hydrochloric acid, D2EHPA-sulfuric acid, Ionquest290-hydrochloric acid, Ionquest290-sulfuric acid, p507-hydrochloric acid using xylene as a diluent, the extraction yield of Y, Eu, Ce, La, and Tb are close to 100%. However, in this conditions, the difference in extraction yield for each element, that is, selectivity is 16% or less.

Synthesis and Characteristics of Zirconium Hybridized Polycarbosilane (지르코늄 혼성 폴리카르보실란의 합성 및 특성)

  • Kang, Phil-Hyun;Yang, Hyun-Soo
    • Applied Chemistry for Engineering
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    • v.9 no.6
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    • pp.791-797
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    • 1998
  • As organosilicon based preceramic polymer, new zirconium hybridized polycarbosilane having a good thermal stability and forming stage was synthesized. Oxidative stability(infusibility) and mechanical property of this polymer during the thermal curing process and heat treatment were examined. Prepared zirconium hybridized polycarbisilane (PZC) was spun into fiber at $250{\sim}270^{\circ}C$. Spinnability of PZC polymer having a molecular weight of 1000 to 1400 and having a dispersity<2 was good. The thermal curing process of the PZC fiber was done at 140 to $200^{\circ}C$. The mechanical properties of PZC ceramic fiber depend on curing temperature of PZC as precursor of PZC ceramic fiber. It was found that the optimum curing temperature was variable with the molecular weight of PZC. The cured PZC fiber need constant gel fraction to have good tensile strength.

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Fabrication of Mg(OH)2 from Ferro-Nickel Slag (페로니켈 슬래그를 이용(利用)한 수산화(水酸化)마그네슘 제조방법(製造方法))

  • Park, Soo Hyun;Chu, Yong Sik;Song, Hun;Lee, Jong Kyu;Seo, Sung Kwan
    • Resources Recycling
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    • v.22 no.1
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    • pp.42-47
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    • 2013
  • Ferro-Nickel slag is a byproduct of Ferro-Nickel manufacturing process. Ferro-Nickel slag mostly discarded or used as aggregates despite having useful ingredients such as magnesium oxide and silicon oxide. This study tried to extract process for Mg ion using $H_2SO_4$ solution. And remove impurities and get high purity $Mg(OH)_2$ using NaOH. Mg ion was extracted with the Fe ion and other Ferro-Nickel slag composition by $H_2SO_4$ solution. It is important to control the pH because remove impurities and obtain high-purity $Mg(OH)_2$. The impurities were removed by precipitation of the hydroxides. After this process, we added NaOH and high-purity $Mg(OH)_2$ was obtained.

High Temperature Ohmic Contacts to Monocrystalline $\beta$-SiC Thin Film Using Nitride Thin Films (질화물 박막을 이용한 단결정 $\beta$-SiC의 고온 ohmic 접촉 연구)

  • Choe, Yeon-Sik;Na, Hun-Ju;Jeong, Jae-Gyeong;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.21-28
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    • 2000
  • Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

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Effects of Seed Layers on Formation of Barium Ferrite Thin Films and Their Magnetic Properties (씨앗층이 바륨훼라이트 박막의 형성과 자기적 성질에 미치는 영향)

  • 나종갑;이택동;박순자
    • Journal of the Korean Magnetics Society
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    • v.2 no.1
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    • pp.22-28
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    • 1992
  • Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of $750^{\circ}C$ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, ${\alpha}-Fe_{2}O_{3}$ and ${\gamma}-Fe_{2}O_{3}$ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of $600^{\circ}C$ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of $230\;{\AA}/min$ was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.

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하이브리드 화학증기증착법을 이용한 금속기판 위 그래핀의 저온합성

  • Lee, Byeong-Ju;Park, Se-Rin;Yu, Han-Yeong;Lee, Jeong-O;Jeong, Gu-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.77-77
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    • 2010
  • 그래핀(Graphene)은 한 겹(layer)의 2차원 판상 구조에 탄소원자들이 육각형의 기본 형태로 배열되어 있는 나노재료로서, 우수한 역학적 강도와 화학적, 열적 안정성 및 흥미로운 전기 전자적 성질을 가지고 있는 것으로 알려져 있다. 최근, 이러한 특징적이고도 우수한 물성으로 인하여 기초물성 연구에서부터 차세대 응용까지 고려한 각종 연구들이 활발하게 진행되고 있다. 일반적으로 그래핀을 얻는 방법에는 물리 화학적 박리, 열화학증기증착법(TCVD), 탄화규소의 흑연화, 흑연산화물의 환원 등의 방법들이 알려져 있다. 그 중 TCVD법이 두께의 균일성이 높은 그래핀을 합성하는데 가장 적절한 것으로 알려져 있다. 그러나 TCVD법은 탄소를 포함하는 원료가스를 분해하기 위하여 고온의 공정을 필요로 하게 되지만, 향후 산업적 응용을 고려한다면 대면적 그래핀의 저온합성법 개발은 풀어야 할 시급한 과제로 인식되고 있다. 현재는 메탄을 원료가스로 사용하여 $900^{\circ}C$ 이상에서 그래핀을 합성하는 추세이고, 최근 아세틸렌등의 활성원료가스를 이용하여 $900^{\circ}C$ 이하에서 저온 합성한 연구결과들도 속속 보고되고 있다. 본 연구에서는 고주파 플라즈마를 이용하여 비교적 저온에서 탄소원료가스를 효율적으로 분해하고, 확산플라즈마 영역에 TCVD 챔버를 결합한 하이브리드 화학증기증착법을 이용하여 그래핀의 저온합성을 도모하였다. 원료가스로는 메탄을 사용하였고, 기판으로는 전자빔증착법으로 증착한 니켈 박막 및 구리포일을 사용하였다. 실험결과, 그래핀은 $600^{\circ}C$ 부근의 저온에서도 수 층으로 이루어진 그래핀이 합성된 것을 확인하였다. 합성한 그래핀은 분석의 용이함 및 향후 다양한 응용을 위하여 실리콘산화막 및 투명고분자 기판 위에 전사(transfer)하였다. 합성된 그래핀의 구조평가를 위해서는 광학현미경과 Raman분광기를 주로 사용하였으며, 원자힘현미경(AFM), 주사전자현미경(SEM), 투과전자현미경(TEM) 등도 이용하였다.

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