Threshold Voltage Movement for Channel Doping Concentration of Asymmetric Double Gate MOSFET (도핑농도에 따른 비대칭 이중게이트 MOSFET의 문턱전압이동현상)
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- Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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- 2014.05a
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- pp.748-751
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- 2014