• Proceedings of the KSEEG Conference
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• 2001.04a
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• pp.119-122
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• 2001

• Proceedings of the KSEEG Conference
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• 2007.04a
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• pp.116-118
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• 2007

• Geophysics and Geophysical Exploration
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• v.24 no.3
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• pp.98-112
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• 2021

We followed and extended the algorithm originally made by Das (1995) to calculate the electric potential and field induced by electric current in arbitrary anisotropic layered structure. We confirmed all the theoretical contents and coded the corresponding program to acquire the electric potential and field. Further we extended to forward estimation of apparent resistivity to be attained by electrical resistivity survey on anisotropic layered structure with differing the electrode spacing and azimuth of anisotropy. The effects of anisotropy were reviewed by considering some examples.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Journal of the Korea Concrete Institute
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• v.17 no.3 s.87
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• pp.411-418
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• 2005

Polymer-modified mortar and concrete are prepared by mixing either a polymer or monomer in a dispersed, or liquid form with fresh cement mortar and concrete mixtures, and subsequently curing, and if necessary, the monomer contained in the mortar or concrete is polymerized in situ. Although polymers and monomers in any form such as latexes, water-soluble polymers, liquid resins, and monomers are used in cement composites such as mortar and concrete, it is very important that both cement hydration and polymer phase formation proceed well the yield a monolithic matrix phase with a network structure in which the hydrated cement phase and polymer phase interpenetrate. In the polymer-modified mortar and concrete structures, aggregates are bound by such a co-matrix phase, resulting in the superior properties of polymer-modified mortar and concrete compared to conventional mortar and concrete. The purpose of this study is to obtain the necessary basic data to develope appropriate latexes as cement modifiers, and to clarify the effects of the monomer ratios and amount of emulsifier on the properties of the polymer-modified mortars using methyl methacrylate-butyl acrylate(MMA/BA) and methyl methacrylate-ethyl acrylate(MMA/EA) latexes. The results of this study are as follows, the water absorption, chloride ion penetration depth and carbonation depth of MMA/BA-modified mortar are lowest. However, they are greatly affected by the polymer-cement ratio rather than the bound MMA content and type of polymer.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.60-60
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• 1999

단결정 다이아몬드의 열전도도는 약 22W/cm.K로 열전도도가 가장 큰 물질로 알려져 있으며, 비저항은 10$\Omega$.cm 이상의 높은 값을 갖는다. 대부분 열전도도가 큰 것으로 알려진 물질들은 Cu, Ag 등과 같이 전자의 흐름에 의하여 열이 전도되기 때문에 큰 전기전도도를 함께 갖는 것일 일반적이다, 그러나, 다이아몬드는 빠른 phonon의 이동에 의하여 열전도가 이루어지므로 전기적으로 절연 특성을 갖으면서도 큰 열전도가 가능하다. 단결정 다이아몬드는 고방열 절연체로서 이상적인 물질 특성을 보여준다. 전기절연성을 갖는 열전도층으로 다이아몬드를 이용하기 위해서는 저가로 제조가 용이한 화학기상증착법을 이용하여야 한다. 화학기상증착법으로 제조된 다결정 다이아몬드 박막의 열전도도는 약 21W/cm.K로 여전히 매우 높은 값을 갖는 것으로 알려져 있지만, 비저항 값은 인위적으로 도핑을 전혀 하지 않은 상태에서도 106$\Omega$.cm 정도의 낮은 값을 갖는다. 전혀 도핑을 하지 않았음에도 전도성을 갖는 특이한 특성을 다결정 다이아몬드가 보여 주고 있으므로 이에 대한 연구는 주로 전기 전도성을 갖는 특이한 특성을 다결정 다이아몬드가 보여주고 있으므로 이에 대한 연구는 주로 전기전도성의 원인을 규명하는데 집중되고 있다. 아직 명확한 전도 기구는 제안되고 있지 못하지만 전도성의 원인은 수소와 관련이 있고 전도는 표면을 통하여 이루어진다는 것이다. 산(acid)을 이용하여 다결정 다이아몬드 박막을 세척하면 전기 전도성이 사라지고 높은 저항값을 갖는 박막을 얻게 되는데 박막을 세척하는 공정은 박막의 표면만을 변호시키므로 표면에 있던 전기전도층이 용액 처리를 통하여 제거되므로 전도성이 사라진다고 생각하는 것이다. 그러나, 본 연구에서는 두께가 두꺼울수록 저항값이 증가하는 것이 관찰되었고 기존의 측정방식인 수평적인 저항 측정법에 대하여 수직적 방향으로 저항을 측정하면 저항값이 1/2 정도 작게 측정되었다. 다결정 다이아몬드에서 표면을 통하여 전류가 흐른다면 박막의 두께에 따른 변화가 나타나지 않아야 하고 수직적인 전류 측정법이 오히려 더 큰 저항을 보여주어야 한다. 기존의 표면 전도 모델로는 설명되지 못하는 현상들이 관찰되었고 정확한 전기 전도 경로를 확인하기 위하여 전해 도금법으로 금속들이 석출되는 모습을 관찰하였다. 이 방법을 통하여 다결정 다이아몬드에서 전류는 결정입계를 통하여 전도됨을 알 수 있었다. 온도에 따른 다결정 다이아몬드의 전기전도도 변화를 관찰하였고 이로부터 활성화 에너지 값을 구할 수 있었다. 다결정 다이아몬드의 전도도는 온도에 따라서 0.049eV와 0.979eV의 두 개의 활성화 에너지를 갖는 구간으로 나뉘어졌다. 이로부터 다결정 다이아몬드에는 활성화 에너지 값이 다른 두 종류의 defect level이 형성되는 것으로 추정할 수 있고 이 낮은 defect level에 의하여 전도성을 갖는 것으로 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.169-169
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• 2009

ZnO varistor에서 희토류 산화물의 첨가는 비선형계 높게 만든다. 회토류 금속의 첨가로 높아진 비저항을 낮추기 위하여 3족 원소인 Al, Ga을 첨가하여 첨가 함량에 따른 ZnO-$Pr_6O_{11}$ varistor의 비저항을 낮추고자 한다. 따라서 본 연구에서는 Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$을 일반적인 세라믹 공정에 따라 제조하여, Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$ varistor의 특성을 미세구조 조직, 밀도, I-V 특성, 비저항 측정하였다. ZnO의 bulk 및 grain boundary 특성 변화를 각종 유전함수($Z^*$, $Y^*$, $M^*$, $\varepsilon^*$, $tan{\delta}$)를 이용하여 고찰하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.64-72
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• 1998

In this work, we have investigated the change of surface roughness, grain size and crystallinity of Poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters (temperature, pressure, Ge composition ) and the effect of these results on the electrical resistivity. The crystallinity and the grain size were increased with increasing deposition temperature and Ge composition. Also, the electrical resistivity was decreased by enhanced grain size, while the surface roughness was increased. With increasing deposition pressure, the crystallinity was increased, but the grain size and the cluster size were decreased, by which the surface roughness was decreased. And the electrical resistivity was increased. Based on the effect of the crystallinity and the grain size on the electrical resistivity, it was founded that the electrical resistivity was depend on the grain size rather than the crystallinity.

• The Journal of Engineering Geology
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• v.28 no.3
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• pp.367-377
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• 2018

This study introduces a DC resistivity inversion method that incorporates structural and inequality constraints to enhance the resolution of resistivity inversions, and presents sample inversion results with these constraints. In the constrained inversions, a base model is constructed from a layered model through interpretation of other geophysical data. Inversion tests establish that both the structural and inequality constraints produce better resistivity models than the unconstrained inversion. However, the inequality inversion not only reproduces the exact layered structure of the background, it reproduces conductive anomalies at a depth of ~ 10 m when an inexact base model of electrical resistivity is used.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.652-656
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• 1998

$(Ba_{0.8-x}Sr_{0.2})Y_xTiO_3\;(BSYT)$ powders were prepared by the calcination of metal-oxalate precipitates, which were obtained by wet chemical method using Ba, Sr, Y and Ti-nitrates and oxalic acid. Yttrium content, sintering temperature and cooling rate were taken as experimental factors. Response surface method was applied to modelling of the room temperature resistivity of BSYT. The results indicated that the Yttrium content had larger effect on the room temperature resistivity and minimum room temperature resistivity was at Yttrium content of 0.24 mol%. The validity of a modelling equation was confirmed by comparing the measured room temperature resistivity with the calculated one.