• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.805-810
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• 2016

The dependence of drain induced barrier lowering(DIBL) is analyzed for doping concentration in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to top/bottom gate oxide thickness and bottom gate voltage as well as channel doping concentration. As a results, the DIBL is significantly influenced by channel doping concentration. DIBL is significantly increased by doping concentration if channel length becomes under 25 nm. The deviation of DIBL is increasing with increase of oxide thickness. Top and bottom gate oxide thicknesses have relation of an inverse proportion to sustain constant DIBL regardless channel doping concentration. We also know the deviation of DIBL for doping concentration is changed according to bottom gate voltage.

• Applied Chemistry for Engineering
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• v.10 no.4
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• pp.515-522
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• 1999

Asymmetric polyetherimide membrane were prepared by phase inversion method, and the effects of NaOH concentration and reaction time on the morphology change of the polyetherimide membranes were studied. The morphology of skin layers varied from dense structure to sphere structure with increasing concentration of modification solution. The thickness of dense layer increased with increasing reaction time. However, when either the concentration of modifying solution was very high or the reaction time was very long, the dense layers of the asymmetric membrane were disappeared. From these results, it was found that the surface morphology of the asymmetric polyetherimide membranes depended strongly on the modification conditions such as concentration of modification solution and reaction time. These results might be explained by the hydrolysis reaction of polyetherimide into polyamic acid by the NaOH solution.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.234-234
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• 2012

Saddle field ion source는 구조가 간단하고 영구자석을 사용하지 않아 소형화에 유리하고 구조가 간단한 DC 파워서플라이를 이용하기 때문에 장치 가격이 저렴하여 다양한 분야에서 응용되고 있으며 특히 이온빔 밀링 분야에 많이 사용된다. 초기 saddle field ion source 는 대칭형의 구형이었으나 지속적인 연구 개발로 와이어형, 원판형, 원통형 등 다양한 형태의 saddle field ion source가 개발되었다. 본 연구에서는 비교적 제작이 용이하고, 구조적으로 외부간섭에 대하여 덜 민감한 원통형 saddle field ion source를 제작하였다. 초기 saddle field ion source는 이온원 내부에 saddle field를 형성하기 위하여 대칭 구조를 가지 형태로 제작되었으나, 비대칭 구조에서도 saddle field가 형성될 수 있고 비대칭 구조를 채택할 경우 한쪽으로 더 많은 이온빔을 인출할 수 있기 때문에 실제 응용면에서는 비대칭 구조가 더 유리하다. 따라서 본 연구에서는 원통형 비대칭 saddle field ion source를 제작하였으며, 제작된 이온소스는 높이가 62 mm 지름이 55 mm의 소형 이온소스였다. 제작된 원통형 saddle field ion source는 진공도와 가속전압에 따라 방전 모드 변화하였다. Saddle field ion source는 전극과 extractor의 구조에 따라 조금씩 다르지만 대체로 5x10-5 Torr ~ 5x10-4 Torr 영역에서 안정적으로 작동하였다. 이온소스 내부의 압력이 높을 경우 수십 mA 의 방전 전류가 흐르는 고전류 방전 모드로 작동하였으며 압력이 낮을 경우에는 동일한 전압에서 수 mA 의 방전 전류만 흐르는 저전류 방전 모드로 작동하였다. 압력이 더 높아질 경우 아크 방전이 발생하여 이온소스의 작동이 불안정하여 연속적인 작동이 어려웠다. 고전류 방전 모드에서는 이온빔 전류가 Child-Langmuir 방정식에 따라 Vi3/2에 비례하여 증가하는 경향을 보여주었으며 저전류 방전 모드에서는 Vi에 선형적으로 증가하였다. 가속 전압이 동일한 경우 고전류 방전 모드가 저전류 방전 모드에 비하여 더 많은 이온빔 인출이 가능하지만, 고전류 방전 모드의 경우 이온의 방출 각도가 매우 넓은 반면 저전류 방전 모드에서는 이온빔의 퍼짐이 현저히 줄어듦을 관찰할 수 있었다. 원통형 saddle field ion source는 내부 구조가 간단하기 때문에 내부 전극의 구조 변화에 따라 방전 특성 및 이온빔 인출 특성이 심하게 변동하였다. Saddle field ion source에서는 Anode에 인가되는 방전 전압이 가속 전압과 같은 역할을 하는데 가속 전압은 2~10 kV 사이에서 인가가 가능하였다. 일반적으로 동일한 방전 모드에서 진공도가 높아질수록 방전 전류의 양과 인출되는 이온의 양이 증가하는 것이 관찰되었다. 제작된 이온소스는 최적 조건에서 5 mm 인출구를 통하여 0.7 mA의 이온빔 인출이 가능하였으며, 9 mm 인출구를 사용한 경우 1 mA까지 이온빔 인출이 가능하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.2
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• pp.1-16
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• 1972

In this paper, the characteristics of linearly tapered strip-line filters, where the even-mode and odd-mode characteristic impedances vary linearly with the same degree along the lines, are analyzed. The Impedance parameters of linearly tapered coupled strip-line, which is made by connecting two linearly tapered unsymmetric coupled strip-lines In cascade and the I:no input and output terminals are made equal, are obtained. Using the above parameters, the Image parameters of linearly tapered coupled strip-line filters are derived. The result of analysis shows that the line length can be made shorter and also the stop-band width between the fundamental and second pass-band becomes wider, compared with the coupled strip-line filters which use uniform strip-lines. Furthermore, the difference of impedance levels in the fundsmental and second pass-band becomes larger with the degree of taper of the lines. This property is unique, in comparison with the case of uniform or exponentially tapered strip-line filters.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.53-62
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• 1992

In Zone Melting Recrystallization(ZMR) of SOl structure, thin silicon films have been recrystallized by artificial control of beam intensity profile which was obtained by tilting of upper elliptical reflector. Temperature profiles and gradients near solidification interface were calculated by numerical simulation for analysis of asymmetric line heating effect. The larger the tilting angle of the upper reflector, the larger the degree of supercooling at liquid and the interdefect spacing in thin silicon films. Major defects were continuous subgrainboundaries. Isolated threading dislocations were observed in the case of the film having low defect density. We have found that the thin silicon films were recrystallized into (100) textured single crystals by cross-sectional TEM and thin film X-ray diffraction analysis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1399-1404
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• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.8A
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• pp.626-632
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• 2003

In this paper, forward-wave -3㏈ directional coupler with finite-thickness conductor and asymmetrical coupled lines are designed and experimentally verified using mode-matching based design methodology. Most of studies published in the literatures about the coupled lines are mainly concentrated on the adjustment of coupling amount by changing various geometric configurations. The analysis results in this paper show that thicker metalization requires reduced coupler length in the forward-wave directional coupler composed of asymmetrical coupled lines. Several forward-wave directional -3 ㏈ couplers with finite metalization thickness composed of asymmetrical coupled microstrip lines have been designed in the 5 ㎓ based on proposed design method. The measured data show -4.05㏈∼-4.09㏈ coupling at center frequency which is very closed to design value. The tight coupling has been implemented with accurate design methodology which take mentalization thickness into account.

• Management & Information Systems Review
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• v.35 no.3
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• pp.1-22
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• 2016

We analyzed the international comovements and structural changes in the quarterly real GDP by the Markov-switching vector autoregressive model (MS-VAR) from 1971(1) to 2016(1). The main results of this study were as follows. First, the business cycle phenomenon that occurs in the models or individual time series in real GDP has been grasped through the MS-VAR models. Unlike previous studies, this study showed the significant comovements, asymmetry and structural changes in the MS-VAR model using a real GDP across countries. Second, even if there was a partial difference, there were remarkable structural changes in the economy contraction regime(recession), such as 1988(2) ending the global oil shock crisis and 2007(3) starting the global financial crisis by the MS-VAR model. Third, large-scale structural changes were generated in the economic expansion and/or contraction regime simultaneously among countries. We found that the second world oil shocks that occurred after the first global oil shocks of 1973 and 1974 were the main reasons that caused the large-scale comovements of the international real GDP among countries. In addition, the spillover between Korea and 5 countries has been weak during the Asian currency crisis from 1997 to 1999, but there was strong transmission between Korea and 5 countries at the end of 2007 including the period of the global financial crisis. Fourth, it showed characteristics that simultaneous correlation appeared to be high due to the country-specific shocks generated for each country with the regime switching using real GDP since 1973. Thus, we confirmed that conclusions were consistent with a number of theoretical and empirical evidence available, and the macro-economic changes were mainly caused by the global shocks for the past 30 years. This study found that the global business cycles were due to large-scale asymmetric shocks in addition to the general changes, and then showed the main international comovements and/or structural changes through country-specific shocks.