• Korean Journal of Crystallography
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• v.5 no.2
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• pp.100-107
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• 1994

A new Nl-pentenyl derivative of pyrimidines has been synthesized by an intramolecular (2+2) photocycloaddition and characterized by the single-crystal X-ray diffraction technique. The compound crystallizes in the rhombohedral system (R3, a=27.767(5)A c=6.390(2)A). In this structure, two 6-membered rings and a 4-membered ring are fused by the N-N or N-C bonds and the Tyidin Part adouts chair conformation. A pair of molecules related by an inversion center we held together through the hydrogen bonding interactions between N and O atoms of the uracil miety.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.82-91
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• 1991

Molecular beam epitaxial growth of GaAs on Si substrate and the results on its analysis are reported. Epitaxy was performed on two different types of the substrate under various grwth conditions, and was analyzed by scanning and transmission electron microscopes, X-ray diffractometer, photoluminescence and Hall measurements. GaAs epitaxial layer has better crystalline quality when it was grown on a tilt-cut substrate. The stress seems to be releaxed more easily when multi-quantum well was introduced in the buffer layer. The epilayer was doped unintentionally with Si during growth due to the diffusion of the substrate. Also observed is that the quantum efficiency of excitonic radiative recombination of the heteroepitaxy is not as good as that of the homoepitaxy in the same doping level.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.350-355
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• 2001

We have investigated characteristics of ZnSe epilayer grown by molecular beam epitaxy(MBE) on semi-insulating(SI) GaAs by using surface photovoltage(SPV). The measurements of SPV were performed with illumination intensity and modulation frequency. The bandgap energy of ZnSe epilayer was determined from derivative surface photovoltage (DSPV). The five states were observed at room temperature(RT), and those states relate to the impurity and defect formed hetero-interface of ZnSe and GaAs during the sample growth. The observed states represented as a tendency of typical extrinsic transition on the increasing illumination intensity. The 1s and 2s signals related to the excitonic absorption were not observed at RT, but those were presented with the splitted of two peaks in the SPV at 80 K. From the modulation frequency dependence, we obtained the junction conductance and capacitance of the sample.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.1
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• pp.176-181
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• 2006

In this study, systematical investigations were carried out on crystal qualifies and optical properties of $ZnSe_{1-x}:Te_x$ (x=0.002-0.04) thin films frown by molecular beam epitaxy (MBE). The crystal qualifies and optical properties have been investigated by X-ray diffraction (XRD) and Photoluminescence (PL) measurements, respectively. From the XRD measurements, the crystallographic characteristics showed mediocre crystal quality with increasing the Te composition. From the PL measurements, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSe:Te epilayers. The efficient blue and green emission were attributed to the recombination of excitons trapped at isoelectronic isolated a single Te atom and $Te_n(n{\geq}2)$ clusters. respectively. The blue emission become dominant in Te tightly doped $ZnSe_{1-x}:Te_x$ $(Te=0.2\%)$ epilayers with increasing temperature. For the Te heavily doping condition $(Te=4.0\%)$, the dominant green emission could be observed at around 160K.

• Proceedings of the KAIS Fall Conference
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• 2012.05a
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• pp.33-35
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• 2012

본 연구에서는 전이금속 Cu, Mn이 함침된 제올라이트를 사용하여 일산화탄소의 흡착능을 연구하였다. 금속 복합 산화물촉매 제조는 Cu, Mn을 서로 다른 비율로 물리 혼합하여 지지체에 담지하였다. 제올라이트 분자체는 상용 13X를 사용하였다. 함침방법은 과잉용액 함침법을 사용하였고, 건조 후 소성 하여 산화물 형태로 담지하였다. 합성된 개질 흡착제의 표면특성 분석은 $N_2$흡착 및 탈착곡선을 통한 질소흡착 특성 분석으로 기공크기, 기공분포, 비표면적을 구하였으며, FT-IR, X-선 회절분석, 전자주사현미경, $NH_3$-TPD/TPR 으로 특성을 분석하였다. 흡착 실험은 고정층 반응기에서 수행하였으며, 내경 4 mm 석영관에 흡착제를 충진하고 흡착파과곡선을 Gas Chromatograph로 측정하여 Cu-Mn 제올라이트 촉매의 일산화탄소 흡착 성능을 연구하였다. Cu-Mn 함량 비율과 흡착조업조건에 따른 흡착능을 측정하여 최적 흡착조건을 구하였다.

• Korean Journal of Crystallography
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• v.2 no.2
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• pp.28-31
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• 1991

4-크로로-4'-메톡시-2-니트로디페닐아민, (C12H11N2O3CL, FW=278.70)의 단것세포 상수는 a=8,169(3), b=8.883(1), c=9.150(1) h, α =82. 98(1), β=104.80(2), y=101.43(2)", V=627.3 A3, F(000)=288.0, Dc=1.48g/cm3, u=3.06cm-1, 7=295" K, 공간군 Pi, 번호 2, 삼사 정계 이며, Z=2이다. λ (Mo-Ka)=0.7107A을 사용 하여 수집한 독립적인 회절 반점 1541개로 구조분 석한 최종 신뢰도 값은 각각 R=0.032, Rw=0.033 이며, S=0.46이다. 본 화합물은 암모니아의 두개 의 수소 대신에 4-크로로-페닐기와 4-메톡시-페닐기로 치환된 물질로써, 질소와 두 페닐기 사이의 각과 결합거리 들은 각각 125.42", 1.362 및 1.428 A 인바 수소와 함께 SP2_혼성결합을 하고있다. 질소를 포함한 두 면간 각은 63.29"이다. 분자간 어 떠 한 수소결합을 하고 지지 않다.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.1-5
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• 2000

We have investigated dielectric properties of IMI-O LB films for the effect of complex concentration by electrical conductivity, dielectric constant and dielectric relaxation time at different frequencies. In the surface pressure-area$\pi$-A) isotherms for the increase of $FE^{3+}$ concentration, the molecular area was expanded with $FE^{3+}$concentration increase by electrostatic repulsion between the polymer chains and hydrophobic increase of ionic strength. In the I-V characteristics, it is found that the limiting area has effects on the change of conductivity And, the dielectric relaxation time decreased for increase of the $FE^{3+}$concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.429-429
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• 2012

본 연구에서는 분자선 박막 성장법(MBE)으로 성장된 GaAs single junction solar cell의 광학적 특성 변화를 photoreflectance (PR)을 이용하여 연구하였다. 본 연구에 사용된 태양전지 구조는 n+-GaAs (100)기판 위에 n+-GaAs buffer를 200 nm 성장 후 그 위에 i-GaAs 250 nm와 p+-GaAs 200 nm 성장 하였다. 상온에서 PR 측정 결과, 변조빔 세기가 증가할수록 Franz-Keldysh oscillation (FKO)의 주파수가 증가하는 현상이 관측되었다. 이는 변조빔의 세기가 강해질수록 광케리어수의 증가로 인한 스크리닝 효과에 기인한 것으로 사료된다. 아울러 Fast Fourier transform (FFT) 결과, 변조빔의 세기가 약할 때는 세 개의 주된 피크가 나타났으며, 이러한 현상은 GaAs에서 가전자대의 heavy hole (HH)과 light hole (LH)의 전이로 인해 나타나는 FKO 신호가 중첩되어 HH과 LH 피크가 HH과 HH-,LH과 LH-로 나뉘어진 것으로 사료된다. 여기광의 세기가 $1.40mW/cm^2$ 이상일 때는 주된 세 개 피크 이외에 부가적인 피크가 상대적으로 고 주파수 영역에서 관측되었다. 이러한 고주파수 영역에서의 나타나는 FKO 주파수는 시료의 내부전기장이 여기광의 세기가 증가할수록 감소하는 결과로 사료된다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.66-72
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• 1995

Using the Si/SiGe layer grown by solid source molecular beam epitaxy(SSMBE) on the LOCOS-patterned wafers, an emitter-base self-aligned hterojunction biplar transistor(HBT) with the polysilicon-emitter and the silicon germanium(SiGe) base has been fabricated. Trech isolation process, planarization process using a chemical-mechanical poliching, and the selectively implanted collector(SIC) process were performed. A titanium disilicide (TiSi$_{2}$), as a base electrode, was used to reduce an extrinsic base resistance. To prevent the strain relaxation of the SiGe epitaxial layer, low temperature (820${^\circ}C$) annealing process was applied for the emitter-base junction formation and the dopant activation in the arsenic-implanted polysilicon. For the self-aligned Si/SiGe HBT of 0.9${\times}3.8{\mu}m^{2}$ emitter size, a cut-off requency (f$_{T}$) of 17GHz, a maximum oscillation frequency (f$_{max}$) of 10GHz, a current gian (h$_{FE}$) of 140, and an emitter-collector breakdown voltage (BV$_{CEO}$) of 3.2V have been typically achieved.

• Journal of the Korean Society of Food Science and Nutrition
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• v.32 no.8
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• pp.1323-1327
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• 2003

Persimmon has been considered to have therapeutic values for various diseases in Korea. Dried persimmon has been applied to wounded parts for anti-inflammatory and analgesic activities. Anti-coagulant fraction from Persimmon stem was purified through gel filtration, phenyl Sepharose, DEAE-Sephadex and additional gel filtration column chromatographies. Its molecular weight was estimated to be 130,000 ∼ 180,000. By element analysis, its main components were C, H, and O. The anti -coagulant was heat- stable and completely inhibited after periodate oxidation, indicating that it was a complex carbohydrate.