• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.1-8
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• 2007

The DC characteristics of GaAs Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.120-123
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• 2003

To investigate the characteristics of the single dendrimer molecule, we attempt to measure morphology and electrical properties of the self-assembled dendrimer on Au (111)substrate with SPM(scanning probe microscopy). The same self-assembly procedure was used for two different concentrations, $10{\mu}mol/ml$ and $100{\mu}mol/ml$. The case of lower concentration, we can measure the diameter and the height of the single molecule with the tapping mode AFM image. The imaged single molecules were dome shaped and the average diameter and height were 15.6 nm, 1.2 nm respectively. From these sizes, we can calculate the volume of the single molecule. The volume of the single molecule was estimated about $116nm^3$. However, that of higher concentration, it is difficult to obtain obvious image of the single molecule. To add to, I-V characteristics were investigated using STM, on which the phenomenon of negative differential resistance (NDR)was observed between 0.14 V and 0.24 V reproductively.