• Title/Summary/Keyword: 부분분극

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Corrosion Analysis of Ni alloy according to the type of molten metal (용융아연도금욕에 적용되는 용탕에 따른 Ni합금의 부식성 분석)

  • Baek, Min-Sook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.459-463
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    • 2017
  • Hot dip galvanizing in the steel plant is one of the most widely used methods for preventing the corrosion of steel materials including structures, steel sheets, and materials for industrial facilities. While hot dip galvanizing has the advantage of stability and economic feasibility, it has difficulty in repairing equipment and maintaining the facilities due to high-temperature oxidation caused by Zn Fume where molten zinc used in the open spaces. Currently, SM45C (carbon steel plate for mechanical structure, KS standard) is used for the equipment. If a part of the equipment is resistant to high temperature and Zn fume, it is expected to improve equipment life and performance. In this study, the manufactured Ni alloy was tested for its corrosion resistance against Zn fume when it was used in the hot dip galvanizing equipment in the steel plant. Two kinds of materials currently used in the equipment, new Ni alloy and Inconel(typical corrosion-resistant Ni alloy), were selected as the reference groups. Two kinds of molten metal were used to confirm the corrosion of each alloy according to the molten metal. Zn fume was generated by bubbling Ar gas from molten Zn in a furnace($500{\sim}700^{\circ}C$) and the samples were analyzed after 30 days. After 30 days, the specimens were taken out, the oxide layer on the surface was confirmed with an optical microscope and SEM, and the corrosion was confirmed using a potentiodynamic polarization test. Corrosion depends on the type of molten metal.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

Experimental Study of Performance of PEMFC Operated in Dead-End Mode (수소극 Dead-End 모드 고분자 전해질 연료전지의 실험적 연구)

  • Ji, Sang-Hoon;Hwang, Yong-Sheen;Choi, Jong-Won;Lee, Dae-Young;Park, Joon-Ho;Jang, Jae-Hyuk;Kim, Min-Soo;Cha, Suk-Won
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.34 no.6
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    • pp.643-648
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    • 2010
  • Portable fuel cells are commonly operated in the dead-end mode because of such as high fuel utilization. However, the performance of such systems deteriorates continuously with an increase in the amount of by-products such as water vapor and nitrogen. In this study, to verify the effect of water vapor on Proton Exchange Membrane Fuel Cells (PEMFCs), constant-load experiments were carried out for a current density of 600 mA/cm2 and a voltage of 0.4 V, respectively. The performance of the cell was more stable under constant voltage conditions than under constant current density conditions. Condensed water accumulated in the anode channel near the cell outlet. The experimental results show how the relative humidity (RH = 0.15, 0.4 and 0.75) of air at the cathode side affect the performance of PEMFCs with dead-end anode. At RH values higher than 0.15, the mean power density increased by up to 51% and the mean purge duration decreased by up to 25% compared to the corresponding initial values.

Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses (고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰)

  • Kim, Dongshin;Koo, Yong-Sung;Kim, Ju-Hee;Kang, Soyeon;Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.37-43
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    • 2017
  • This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

Switching Behaviour of the Ferroelectric Thin Film and Device Characteristics of MFSFET with Fatigue (피로현상을 고려한 강유전박막의 Switching 과 MFSFET 소자의 특성)

  • Lee, Kook-Pyo;Kang, Seong-Jun;Yoon, Yung-Sup
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.6
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    • pp.24-33
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    • 2000
  • Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

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Effect of Total Resistance of Electrochemical Cell on Electrochemical Impedance of Reinforced Concrete Using a Three-Electrode System (3전극방식을 활용한 철근 콘크리트의 교류임피던스 측정 시 전기화학 셀저항의 영향)

  • Khan, Md. Al-Masrur;Kim, Je-Kyoung;Yee, Jurng-Jae;Kee, Seong-Hoon
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.26 no.6
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    • pp.82-92
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    • 2022
  • This study aims to investigate the effect of total electrochemical cell resistance (TECR) on electrochemical impedance (EI) measurements of reinforced concrete (RC) by electrochemical impedance spectroscopy (EIS) using a three-electrode system. A series of experimental study is performed to measure electrochemical behavior of a steel bar embedded in a concrete cube specimen, with a side length of 200 mm, in various experimental conditions. Main variables include concrete dry conditions, coupling resistance between sensing electrodes and concrete surface, and area of the counter electrode. It is demonstrated that EI values remains stable when the compliant voltage of a measuring device is sufficiently great compared to the potential drop caused by TECR of concrete specimens. It is confirmed that the effect of the coupling resistance of TECR is far more influential than other two factors (concrete dry conditions and area of the counter electrode). The results in this study can be used as a fundamental basis for development of a surface-mount sensor for corrosion monitoring of reinforced concrete structures exposed to wet-and-dry cycles under marine environment.