• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.69-72
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• 2003

This paper describes the information for the difference between two-term and multi-term approximation of the Boltzmann. In previous paper, we calculated the electron transport coefficients in pure Oxygen and Argon gases by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W and $N{\cdot}D_L$) in pure Oxygen and Argon gases for range of E/N values from 0.01~500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data for a range of E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.73-76
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• 2003

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in pure Xenon gas by using two-term approximation of Boltzmann equation. Therefore, in this paper, we calculated the electron transport coefficients(W, $N{\cdot}D_L$ and $D_{L/{\mu}}$) in pure Xenon gas for range of E/N values from 0.01 ~ 500[Td] at the temperature was 300[K] and pressure was 1[Torr] by using multi-term approximation of the Boltzmann equation by Robson and Ness, The results of two-term and multi-term approximation of the Boltzmann equation has been compared with the experimental data by L. S. Frost and A. V. Phelps for a range of E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.141-144
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• 2001

An accurate cross sections set are necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method. we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. In previous paper, we calculated the electron transport coefficients in pure $CF_4$ molecular gas by using two-term approximation of the Boltzmann equation. And by using this simulation method. we confirmed erroneous calculated results of transport coefficients for $CF_{4}$ molecule treated in this paper having 'C2v symmetry' as $C_{3}H_{8}$ and $C_{3}F_{8}$ which have large vibrational excitation cross sections which may exceed elastic momentum transfer cross section. Therefore, in this paper, we calculated the electron transport coefficients(W and $ND_L$) in pure $CF_4$ gas by using multi-term approximation of the Boltzmann equation by Robson and Ness which was developed at lames-Cook university, and discussed an application and/or validity of the calculation method by comparing the calculated results by two-term and multi-term approximation code.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.141-144
• /
• 2001

An accurate cross sections set are necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method, we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. In previous paper, we calculated the electron transport coefficients in pure CF$_4$ molecular gas by using two-term approximation of the Boltzmann equation. And by using this simulation method, we confirmed erroneous calculated results of transport coefficients for CF$_4$ molecule treated in this paper having 'C2v symmetry'as C$_3$H$_{8}$ and C$_3$F$_{8}$ which have large vibrational excitation cross sections which may exceed elastic momentum transfer cross section. Therefore, in this paper, we calculated the electron transport coefficients(W and ND$_{L}$) in pure CF$_4$ gas by using multi-term approximation of the Boltzmann equation by Robson and Ness which was developed at James-Cook university, and discussed an application and/or validity of the calculation method by comparing the calculated results by two-term and multi-term approximation code.e.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.41 no.6
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• pp.409-414
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• 2017

The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.