• Title/Summary/Keyword: 배향막

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Nanostructuring the Polyimide Alignment Layer and Uniform Liquid Crystal Alignment by Solvent Assisted Micromolding (Solvent Assisted Micromolding을 이용한 Polyimide 나노구조 형성 및 이를 통한 균일 액정 배향)

  • Kim, Jongbok
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.12 no.1
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    • pp.72-77
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    • 2019
  • The display that provides information to us through the visual sense is a very important information transmission means by intuitively transmitting information, and the liquid crystal display (LCD) is the most widely used information transmission display. In this paper, we studied solvent assisted micromolding as an alternative for the rubbing that is essential to align the liquid crystals in LCD and successfully aligned the liquid crystal molecules by constructing the nanostructures on conventional polyimide alignment layer. When generating the nanostructures on the polyimide film, there was a competitive correlation between the dissolution effect of the polymer by the solvent and the capillary effect of the polyimide molecules into the nanostructures of the mold depending on the process temperature. It was possible to form nanostructures with high step by deriving the optimum temperature. These nanostructures were able to align the liquid crystal molecules uniformly and demonstrated that they could form a desirable pretilt angle.

Influence of gas mixing ration on secondary electron emission coefficient of MgO single crystal with different orientations and MgO protective layer

  • 임재용
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.234-234
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    • 1999
  • AC-PDP(Plasma Display Panel)에 사용하는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류에 영향을 받는다. 현재 AC-PDP에는 방전특성의 향상과 VUV 발생을 위하여 He, Ne, Ar, Xe 등의 비활성기체를 두가지 혹은 세가지로 혼합한 혼합기체가 사용되고 있다. 기체를 혼합할 경우 Penning 효과에 의해 더 좋은 방전특성을 얻을 수 있는 것으로 알려져 왔으며, 이때의 적절한 혼합비율을 찾는 것은 AC-PDP의 효율 개선에 매우 중요하다. 이번 실험에서는 (111), (100), (110) 각각의 방향으로 배향된 MgO Bulk Crystal과 MgO 보호막의 이차전자방출계수를 He+Ne+Xe 삼원기체를 사용하였다. MgO 보호막은 실제 21inch 규격의 Panel을 사용하였으며, 혼합기체의 혼합비율의 Ne:Xe을 99:1, 98:2, 96:4, 93:7과 He+Ne+Xe의 삼원기체로 다양하게 변화시켜 가며 실험하였다.

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Influence of N2 gas mixing ratio on secondary electron emission coefficient of MgO single crystal and MgO protective layer

  • 임재용
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.201-201
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    • 2000
  • AC-PDP(Plasma Display Panel)에 사용하는 MgO 보호막의 이차전자 방출계수(${\gamma}$)는 AC-PDP의 방전특성을 결정짓는 중요한 요소이다. MgO 보호막의 이차전자 방출계수는 AC-PDP에 주입하는 기체의 종류에 영향을 받는다. 현재 AC-PDP에는 방전특성의 향상과 VUV 발생을 위하여 He, Ne, Xe 등의 혼합기체가 사용되고 있으며, N 기체를 혼합하여 사용할 경우 더 좋은 발광효율을 얻을 수 있다는 보고가 있다. 이번 실험에서는 (100) 방향으로 배향된 MgO Bulk Crystal과 MgO 보호막의 이차전자방출계수를 ${\gamma}$-FIB 장치로 N2 기체혼합비율에 따라 측정하였다. 혼합기체는 Ne=N2 이원기체를 여러 가지 혼합 비율로 변화시켜가며 실험하였다. MgO 보호막은 실제 21inch 규격의 Panel을 사용하였다.

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A Study of the Crystallographic Characteristic of ZnO Thin Film Grown on ZnO Buffer Layer (ZnO Buffer Layer에 의한 ZnO 박막의 결정학적 특성에 관한 연구)

  • 금민종;손인환;이정석;신성권;김경환
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.214-217
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    • 2003
  • In this study, we prepared ZnO thin film on $SiO_2$/Si substrate by FTS (Facing Targets Sputtering) apparatus which can reduce damage on the thin film because the bombardment of high-energy Particles such as ${\gamma}$-electron can be restrained. And, properties of thin filnl grown with ZnO buffer-layer which can be suppress initial growth layer was investigated. The crystalline and the c-axis preferred orientation of ZnO thin film was also investigated by XRD. As a result, we noticed that the ZnO thin film has a good crystallographic characteristic at thickness of ZnO buffer layer 10, 20 nm and working pressure 1 mTorr.

A Study on the Characteristics of MgO Thin Films Prepared by Electron Beam (전자빔 증착법에 의해 형성된 MgO 박막의 증착 및 특성)

  • Lee, Choon-Ho;Kim, Sun-Il;Shin, Ho-Shik
    • Journal of the Korean Ceramic Society
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    • v.39 no.12
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    • pp.1171-1176
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    • 2002
  • The growth characteristics on the MgO thin films prepared by the e-beam evaporation method have been investigated. We observed the film of preferred orientation and surface morphology with various parameters such as substrate temperature, deposition rate on Si(100) and slide glass respectively. Consequently, it was shown that MgO(111) preferred orientation films can be obtained as the deposition rate was increased on Si(100) substrate. MgO(220) peak was found as the substrate temperature was increased. Whereas, in case of slide glass the orientation is changed from (200) to (111) by substrate temperature. Also we investigated the relationship between the film characteristics and the orientation of MgO thin films.

Patterning of BiLaO film using imprinting process for liquid crystal display (임프린팅을 이용한 BiLaO 패터닝과 액정 디스플레이 소자의 응용)

  • Lee, Ju Hwan
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.64-68
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    • 2021
  • We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

Influence of Morphology on Corrosion Resistance of Al-Mg Coating Films prepared by PVD Process (PVD 프로세스에 의해 제작된 Al-Mg 코팅막의 내식성에 미치는 모폴로지의 영향)

  • Park, Jun-Mu;Gang, Jae-Uk;Hwang, Seong-Hwa;Gang, Jun;Lee, Myeong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.352-352
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    • 2015
  • PVD(Physical Vapor Deposition)법은 제작 조건에 따라 그 특성이 변하므로 원하는 재료 특성을 얻기 위해서는 모폴로지, 결정배향성 등에 따른 코팅막의 특성을 이해하는 것이 중요하다. 따라서 본 연구에서는 친환경 프로세스 방법인 PVD법 중 하나인 스퍼터링(Sputtering)을 이용하여 Al-Mg 막을 제작하였고, 제작된 막들에 대한 형성 메커니즘과 내식성 상관관계 해명을 위해 막의 조성분포, 표면 및 단면의 모폴로지 관찰 및 결정구조 분석을 진행하였다. 또한 염수분무 및 전기화학적 양극분극 시험을 통해 Al-Mg 막의 표면 및 단면 모폴로지가 내식특성에 미치는 영향을 고찰하였다. Al-Mg 막의 모폴로지 관찰결과 Mg 함량 및 열처리 조건에 의해 단면의 주상정 형태는 입상정 또는 무형태로 변화하였고, 표면의 모폴로지는 미세하고 치밀해지는 것으로 나타났다. 결과적으로 무형태의 단면 모폴로지와 미세하고 치밀한 표면 모폴로지를 갖는 막이 우수한 내식성을 나타내었다.

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A Study on the Enhancement of Corrosion Resistance of Magnesium Alloy by Dry Plasma Process (건식플라즈마 표면처리법에 의한 마그네슘 합금의 내식특성 향상)

  • Yun, Yang-Sup
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.17 no.2
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    • pp.155-160
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    • 2011
  • In these days, there are increasing demands for weight reduction in many industrial fields including marine industries. Therefore, magnesium thin films for lightweight materials were prepared on magnesium alloy substrate. The influence of gas pressure and substrate bias voltages on the crystal orientation and morphology of the films was determined by using X-ray diffraction and FE-SEM, respectively. And the effect of crystal orientation and morphology of the magnesium thin films on corrosion behavior was estimated by measuring electro-chemical anodic polarization curves in deaerated 3% NaCl solution. From the results, corrosion resistance of Mg thin films was improved by controlling the crystal orientation and morphology of the films with effective use of plasma ion plating technique.